| Verification and mitigation of ion migration in perovskite solar cells JW Lee, SG Kim, JM Yang, Y Yang, NG Park APL materials 7 (4), 2019 | 260 | 2019 |
| In-Situ Formed Type I Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode JW Lee, YJ Choi, JM Yang, S Ham, SK Jeon, JY Lee, YH Song, EK Ji, ... ACS nano 11 (3), 3311-3319, 2017 | 176 | 2017 |
| Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing JM Yang, ES Choi, SY Kim, JH Kim, JH Park, NG Park Nanoscale 11 (13), 6453-6461, 2019 | 146 | 2019 |
| Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite JY Seo, J Choi, HS Kim, J Kim, JM Yang, C Cuhadar, JS Han, SJ Kim, ... Nanoscale 9 (40), 15278-15285, 2017 | 139 | 2017 |
| All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory C Cuhadar, SG Kim, JM Yang, JY Seo, D Lee, NG Park ACS applied materials & interfaces 10 (35), 29741-29749, 2018 | 116 | 2018 |
| Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory SY Kim, JM Yang, ES Choi, NG Park Advanced Functional Materials 30 (27), 2002653, 2020 | 108 | 2020 |
| 1D Hexagonal HC(NH2)2PbI3 for Multilevel Resistive Switching Nonvolatile Memory JM Yang, SG Kim, JY Seo, C Cuhadar, DY Son, D Lee, NG Park Advanced Electronic Materials 4 (9), 1800190, 2018 | 88 | 2018 |
| Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses SJ Kim, TH Lee, JM Yang, JW Yang, YJ Lee, MJ Choi, SA Lee, JM Suh, ... Materials Today 52, 19-30, 2022 | 73 | 2022 |
| Potassium ions as a kinetic controller in ionic double layers for hysteresis-free perovskite solar cells SG Kim, C Li, A Guerrero, JM Yang, Y Zhong, J Bisquert, S Huettner, ... Journal of Materials Chemistry A 7 (32), 18807-18815, 2019 | 65 | 2019 |
| Effect of interlayer spacing in layered perovskites on resistive switching memory SY Kim, JM Yang, ES Choi, NG Park Nanoscale 11 (30), 14330-14338, 2019 | 50 | 2019 |
| Roadmap on halide perovskite and related devices DN Jeong, JM Yang, NG Park Nanotechnology 31 (15), 152001, 2020 | 39 | 2020 |
| A layered (n-C 4 H 9 NH 3) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio SY Kim, JM Yang, SH Lee, NG Park Nanoscale 13 (29), 12475-12483, 2021 | 32 | 2021 |
| Asymmetric Carrier Transport in Flexible Interface-type Memristor Enables Artificial Synapses with Sub-Femtojoule Energy Consumption JM Yang, YK Jung, JH Lee, YC Kim, SY Kim, DA Park, JH Kim, SY Jeong, ... Nanoscale Horizons, 2021 | 28 | 2021 |
| Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks JM Yang, JH Lee, YK Jung, SY Kim, JH Kim, SG Kim, JH Kim, S Seo, ... Advanced Science 9 (14), 2200168, 2022 | 18 | 2022 |
| The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties ES Choi, JM Yang, SG Kim, C Cuhadar, SY Kim, SH Kim, D Lee, NG Park Nanoscale 11 (30), 14455-14464, 2019 | 17 | 2019 |
| Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance JH Lee, JM Yang, SY Kim, S Baek, S Lee, SJ Lee, NG Park, JW Lee Advanced Functional Materials 33 (14), 2214142, 2023 | 8 | 2023 |
| Memristive Organic Bismuth Iodides for Neuromorphic Computing with High Performance JM Yang, SY Kim, NG Park Electrochemical Society Meeting Abstracts prime2020, 2049-2049, 2020 | | 2020 |
Nam-Gyu ParkProfessor of School of Chemical Engineering, Sungkyunkwan UniversityAdresse e-mail validée de skku.edu