State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ...
Materials Science and Engineering: B 176 (4), 283-288, 2011
470 2011 Extreme dielectric strength in boron doped homoepitaxial diamond PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ...
Applied Physics Letters 97 (22), 2010
167 2010 Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices C Raynaud, D Tournier, H Morel, D Planson
Diamond and related materials 19 (1), 1-6, 2010
146 2010 Deep SiC etching with RIE M Lazar, H Vang, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ...
Superlattices and microstructures 40 (4-6), 388-392, 2006
74 2006 High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, F Jomard, D Planson, ...
physica status solidi (a) 207 (9), 2088-2092, 2010
67 2010 Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy NS Savkina, AA Lebedev, DV Davydov, AM Strel'Chuk, AS Tregubova, ...
Materials Science and Engineering: B 77 (1), 50-54, 2000
67 2000 Towards an airborne high temperature SiC inverter D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ...
2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008
61 2008 Angle etch control for silicon carbide power devices F Lanois, P Lassagne, D Planson, ML Locatelli
Applied physics letters 69 (2), 236-238, 1996
60 1996 High-voltage 4H-SiC thyristors with a graded etched junction termination extension G Paques, S Scharnholz, N Dheilly, D Planson, RW De Doncker
IEEE Electron Device Letters 32 (10), 1421-1423, 2011
56 2011 Ni–Al ohmic contact to p-type 4H-SiC H Vang, M Lazar, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ...
Superlattices and microstructures 40 (4-6), 626-631, 2006
55 2006 The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC F Laariedh, M Lazar, P Cremillieu, J Penuelas, JL Leclercq, D Planson
Semiconductor Science and Technology 28 (4), 045007, 2013
46 2013 A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3 SiC2 Phase T Abi-Tannous, M Soueidan, G Ferro, M Lazar, C Raynaud, B Toury, ...
IEEE Transactions on Electron Devices 63 (6), 2462-2468, 2016
40 2016 Experimental determination of impact ionization coefficients in 4H-SiC DM Nguyen, C Raynaud, N Dheilly, M Lazar, D Tournier, P Brosselard, ...
Diamond and related materials 20 (3), 395-397, 2011
33 2011 High temperature characterization of SiC-JFET and modelling R Mousa, D Planson, H Morel, C Raynaud
2007 European Conference on Power Electronics and Applications, 1-10, 2007
33 2007 Modeling and high temperature characterization of SiC-JFET R Mousa, D Planson, H Morel, B Allard, C Raynaud
2008 IEEE Power Electronics Specialists Conference, 3111-3117, 2008
32 2008 Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts T Zhang, C Raynaud, D Planson
The European Physical Journal Applied Physics 85 (1), 10102, 2019
31 2019 Optical triggering of SiC thyristors using UV LEDs N Dheilly, G Pâques, S Scharnholz, P Bevilacqua, C Raynaud, ...
Electronics letters 47 (7), 459-460, 2011
30 2011 SiC power devices operation from cryogenic to high temperature: investigation of various 1.2 kV SiC power devices T Chailloux, C Calvez, N Thierry-Jebali, D Planson, D Tournier
Materials Science Forum 778, 1122-1125, 2014
29 2014 Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC. R Nipoti, F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, M Lazar, ...
MRS Online Proceedings Library (OPL) 742, K6. 2, 2002
29 2002 Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of M Lazar, C Raynaud, D Planson, JP Chante, ML Locatelli, L Ottaviani, ...
Journal of applied physics 94 (5), 2992-2998, 2003
28 2003 
Dominique TournierPower Electronics ExpertAdresse e-mail validée de usicpower.com
