| Zinc tin oxide synaptic device for neuromorphic engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020 | 57 | 2020 |
| 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim Advanced Intelligent Systems 4 (9), 2100273, 2022 | 55 | 2022 |
| Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM J Park, TH Kim, O Kwon, M Ismail, C Mahata, Y Kim, S Kim, S Kim Nano Energy 104, 107886, 2022 | 53 | 2022 |
| Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim Chaos, Solitons & Fractals 153, 111587, 2021 | 52 | 2021 |
| Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array TH Kim, H Nili, MH Kim, KK Min, BG Park, H Kim Applied Physics Letters 117 (15), 2020 | 48 | 2020 |
| Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM S Kim, TH Kim, H Kim, BG Park Applied Physics Letters 117 (20), 2020 | 46 | 2020 |
| Nano-cone resistive memory for ultralow power operation S Kim, S Jung, MH Kim, TH Kim, S Bang, S Cho, BG Park Nanotechnology 28 (12), 125207, 2017 | 41 | 2017 |
| 3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system TH Kim, J Lee, S Kim, J Park, BG Park, H Kim Nanotechnology 32 (29), 295201, 2021 | 36 | 2021 |
| Fabrication and Characterization of TiOx Memristor for Synaptic Device Application TH Kim, MH Kim, S Bang, DK Lee, S Kim, S Cho, BG Park IEEE Transactions on Nanotechnology 19, 475-480, 2020 | 33 | 2020 |
| Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application S Bang, MH Kim, TH Kim, DK Lee, S Kim, S Cho, BG Park Solid-State Electronics 150, 60-65, 2018 | 32 | 2018 |
| Ultralow power switching in a silicon-rich SiN y/SiN x double-layer resistive memory device S Kim, YF Chang, MH Kim, S Bang, TH Kim, YC Chen, JH Lee, BG Park Physical Chemistry Chemical Physics 19 (29), 18988-18995, 2017 | 28 | 2017 |
| Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors J Park, TH Kim, S Kim, GH Lee, H Nili, H Kim Chaos, Solitons & Fractals 152, 111388, 2021 | 27 | 2021 |
| Tunable Non-volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse TH Kim, O Phadke, YC Luo, H Mulaosmanovic, J Mueller, S Duenkel, ... IEEE Electron Device Letters, 2023 | 26 | 2023 |
| Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current MH Kim, S Kim, S Bang, TH Kim, DK Lee, S Cho, BG Park IEEE Transactions on Nanotechnology 17 (4), 824-828, 2018 | 25 | 2018 |
| Effect of program error in memristive neural network with weight quantization TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022 | 24 | 2022 |
| Nonvolatile Capacitive Synapse: Device Candidates for Charge Domain Compute-In-Memory S Yu, YC Luo, TH Kim, O Phadke IEEE Electron Devices Magazine 1 (2), 23-32, 2023 | 23 | 2023 |
| Multiplexed silicon nanowire tunnel FET-based biosensors with optimized multi-sensing currents S Kim, R Lee, D Kwon, TH Kim, TJ Park, SJ Choi, HS Mo, DH Kim, ... IEEE Sensors Journal 21 (7), 8839-8846, 2021 | 23 | 2021 |
| Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array J Kim, S Lee, S Kim, S Yang, JK Lee, TH Kim, M Ismail, C Mahata, Y Kim, ... Advanced Functional Materials, 2310193, 2023 | 22 | 2023 |
| High-speed emerging memories for AI hardware accelerators A Lu, J Lee, TH Kim, MAU Karim, RS Park, H Simka, S Yu Nature Reviews Electrical Engineering 1 (1), 24-34, 2024 | 21 | 2024 |
| Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory S Kim, YF Chang, MH Kim, TH Kim, Y Kim, BG Park Materials 10 (5), 459, 2017 | 20 | 2017 |
Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityAdresse e-mail validée de snu.ac.kr
