Colin Humphreys

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137 articles

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Rachel OliverProfessor of Materials Science, Cambridge UniversityAdresse e-mail validée de cam.ac.uk
Philip DawsonUniversity of ManchesterAdresse e-mail validée de manchester.ac.uk
Gianluigi BottonMcMaster UniversityAdresse e-mail validée de mcmaster.ca
Michelle MoramSenior Lecturer and Royal Society University Research Fellow, Imperial College LondonAdresse e-mail validée de imperial.ac.uk
Dandan ZhuUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
F. C-P. MassabuauUniversity of StrathclydeAdresse e-mail validée de strath.ac.uk
Chris BoothroydNanyang Technological UniversityAdresse e-mail validée de ntu.edu.sg
David HolecMontanuniversität Leoben, AustriaAdresse e-mail validée de unileoben.ac.at
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Adresse e-mail validée de c2n.upsaclay.fr
Robert TaylorProfessor of Condensed Matter Physics, University of OxfordAdresse e-mail validée de physics.ox.ac.uk
T.M. SmeetonVice President, Research at EnvisicsAdresse e-mail validée de envisics.com
Dr. Darren M. GrahamThe University of ManchesterAdresse e-mail validée de manchester.ac.uk
Wai Yuen FuResearch Assistant Professor, Electrical and Electronic Engineering, the University of Hong KongAdresse e-mail validée de hku.hk
Tongtong ZhuUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
James Thomas GriffithsResearch associate, University of CambridgeAdresse e-mail validée de cam.ac.uk
Ranjan DattaProfessorAdresse e-mail validée de jncasr.ac.in
Siyuan ZhangMax-Planck-Institut für Eisenforschung GmbHAdresse e-mail validée de mpie.de
Matthew J. DaviesAttolight AGAdresse e-mail validée de attolight.com
G A D BriggsProfessor of Nanomaterials, University of OxfordAdresse e-mail validée de materials.ox.ac.uk
Simon HammersleyResearch Associate, University of ManchesterAdresse e-mail validée de manchester.ac.uk

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Colin Humphreys

Queen Mary University of London

Adresse e-mail validée de qmul.ac.uk

Materials science graphene Gallium Nitride electron microscopy science and religion


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton Physical Review B 57 (3), 1505, 1998	14449	1998
Solid-state lighting CJ Humphreys MRS bulletin 33 (4), 459-470, 2008	497	2008
Machine learning predicts laboratory earthquakes B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ... Geophysical Research Letters 44 (18), 9276-9282, 2017	458	2017
Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013	401	2013
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied physics letters 83 (26), 5419-5421, 2003	343	2003
The scattering of fast electrons by crystals CJ Humphreys Reports on Progress in Physics 42 (11), 1825, 1979	317	1979
Absorption parameters in electron diffraction theory PBH CJ Humphreys Philosophical Magazine 18, 115-122, 1968	291	1968
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 2005	271	2005
Critical thickness calculations for InGaN/GaN D Holec, P Costa, MJ Kappers, CJ Humphreys Journal of Crystal Growth 303 (1), 314-317, 2007	270	2007
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ... Journal of Applied Physics 91 (1), 367-374, 2002	253	2002
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of applied physics 114 (13), 2013	248	2013
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies Journal of Applied Physics 89 (6), 3143-3150, 2001	226	2001
Carrier localization mechanisms in InGaN/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011	221	2011
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 2007	208	2007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	199	1989
Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys Journal of Applied Physics 105 (11), 2009	179	2009
Dopant profiling with the scanning electron microscope—A study of Si SL Elliott, RF Broom, CJ Humphreys Journal of applied physics 91 (11), 9116-9122, 2002	179	2002
Chemical mapping and formation of V-defects in InGaN multiple quantum wells N Sharma, P Thomas, D Tricker, C Humphreys Applied Physics Letters 77 (9), 1274-1276, 2000	179	2000
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003	178	2003
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons CJHPBH JP Spencer Philosophical Magazine 26, 193-213, 1972	167	1972

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