Study of the composition of hydrogenated silicon nitride SiNx: H for efficient surface and bulk passivation of silicon JF Lelièvre, E Fourmond, A Kaminski, O Palais, D Ballutaud, M Lemiti Solar Energy Materials and Solar Cells 93 (8), 1281-1289, 2009 | 218 | 2009 |
Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation J Dupuis, E Fourmond, JF Lelièvre, D Ballutaud, M Lemiti Thin Solid Films 516 (20), 6954-6958, 2008 | 97 | 2008 |
Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron M Forster, E Fourmond, FE Rougieux, A Cuevas, R Gotoh, K Fujiwara, ... Applied Physics Letters 100 (4), 2012 | 77 | 2012 |
Design of porous silicon/PECVD SiOx antireflection coatings for silicon solar cells L Remache, E Fourmond, A Mahdjoub, J Dupuis, M Lemiti Materials Science and Engineering: B 176 (1), 45-48, 2011 | 64 | 2011 |
Characterization of Al2O3 thin films prepared by thermal ALD C Barbos, D Blanc-Pelissier, A Fave, E Blanquet, A Crisci, E Fourmond, ... Energy Procedia 77, 558-564, 2015 | 60 | 2015 |
Electrical properties of boron, phosphorus and gallium co-doped silicon E Fourmond, M Forster, R Einhaus, H Lauvray, J Kraiem, M Lemiti Energy Procedia 8, 349-354, 2011 | 56 | 2011 |
Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition J Dupuis, E Fourmond, D Ballutaud, N Bererd, M Lemiti Thin Solid Films 519 (4), 1325-1333, 2010 | 52 | 2010 |
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications M Forster, E Fourmond, R Einhaus, H Lauvray, J Kraiem, M Lemiti physica status solidi c 8 (3), 678-681, 2011 | 42 | 2011 |
Investigation of graded index SiOxNy antireflection coating for silicon solar cell manufacturing M Lipiński, A Kaminski, JF Lelièvre, M Lemiti, E Fourmond, P Zięba physica status solidi c 4 (4), 1566-1569, 2007 | 39 | 2007 |
Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon M Forster, A Cuevas, E Fourmond, FE Rougieux, M Lemiti Journal of Applied Physics 111 (4), 2012 | 35 | 2012 |
Higher emitter quality by reducing inactive phosphorus B Bazer-Bachi, E Fourmond, P Papet, L Bounaas, O Nichiporuk, ... Solar Energy Materials and Solar Cells 105, 137-141, 2012 | 33 | 2012 |
Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells M Forster, P Wagner, J Degoulange, R Einhaus, G Galbiati, FE Rougieux, ... Solar energy materials and solar cells 120, 390-395, 2014 | 30 | 2014 |
Photonic crystal assisted ultra-thin silicon photovoltaic solar cell C Seassal, Y Park, A Fave, E Drouard, E Fourmond, A Kaminski, M Lemiti, ... Photonics for Solar Energy Systems II 7002, 33-40, 2008 | 29 | 2008 |
Light management in perovskite photovoltaic solar cells: A perspective F Berry, R Mermet‐Lyaudoz, JM Cuevas Davila, DA Djemmah, ... Advanced Energy Materials 12 (20), 2200505, 2022 | 27 | 2022 |
Incomplete ionization and carrier mobility in compensated p-type and n-type silicon M Forster, FE Rougieux, A Cuevas, B Dehestru, A Thomas, E Fourmond, ... IEEE Journal of Photovoltaics 3 (1), 108-113, 2012 | 23 | 2012 |
Refining of metallurgical silicon for crystalline solar cells E Fourmond, C Ndzogha, D Pelletier, Y Delannoy, C Trassy, Y Caratini, ... 19th European Photovoltaic Solar Energy Conference, 1017-1020, 2004 | 17 | 2004 |
Selective laser doping from boron silicate glass G Poulain, D Blanc, A Focsa, J Gibier, E Fourmond, B Bazer-Bachi, ... Energy Procedia 27, 455-459, 2012 | 15 | 2012 |
Influence of cell edges on the performance of silicon heterojunction solar cells V Giglia, R Varache, J Veirman, E Fourmond Solar Energy Materials and Solar Cells 238, 111605, 2022 | 14 | 2022 |
Understanding of the influence of localized surface defectivity properties on the performances of silicon heterojunction cells V Giglia, R Varache, J Veirman, E Fourmond Progress in Photovoltaics: Research and Applications 28 (12), 1333-1344, 2020 | 14 | 2020 |
Lifetime Degradation on n-type Wafers with Boron-diffused and SiO2/SiN-passivated Surface C Renevier, E Fourmond, M Forster, S Parola, M Le Coz, E Picard Energy Procedia 55, 280-286, 2014 | 14 | 2014 |