A F M Anhar Uddin Bhuiyan

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Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUAdresse e-mail validée de osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityAdresse e-mail validée de osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityAdresse e-mail validée de ece.osu.edu
Steven RingelThe Ohio State UniversityAdresse e-mail validée de osu.edu
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Adresse e-mail validée de buffalo.edu
Baishakhi MazumderUniversity at BuffaloAdresse e-mail validée de buffalo.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityAdresse e-mail validée de asu.edu
Sudipto SahaPhD in Electrical EngineeringAdresse e-mail validée de buffalo.edu
Xiuling LiUniversity of Texas at AustinAdresse e-mail validée de utexas.edu
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraAdresse e-mail validée de mrl.ucsb.edu
Alex Q. HuangUniversity of Texas at AustinAdresse e-mail validée de utexas.edu
Joel B VarleyLawrence Livermore National LaboratoryAdresse e-mail validée de llnl.gov
Andrew J. GreenAir Force Research LabAdresse e-mail validée de us.af.mil
Kelson ChabakAir Force Research LaboratoryAdresse e-mail validée de us.af.mil
Shin MouAir Force Research LaboratoryAdresse e-mail validée de us.af.mil
Saleh Ahmed KhanGraduate Student, University of Massachusetts LowellAdresse e-mail validée de student.uml.edu
Wenjuan ZhuAssociate Professor, University of Illinois at Urbana-ChampaignAdresse e-mail validée de illinois.edu
Zetian MiUniversity of Michigan, Ann ArborAdresse e-mail validée de umich.edu
Ahmed IbreljicResearch Assistant, University of Massachusetts LowellAdresse e-mail validée de uml.edu
Kathleen KashProfessor of Physics, Case Western Reserve UniversityAdresse e-mail validée de case.edu

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A F M Anhar Uddin Bhuiyan

Assistant Professor, Electrical and Computer Engineering, University of Massachusetts Lowell

Adresse e-mail validée de uml.edu - Page d'accueil

Semiconductor Materials and Devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	338	2019
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	170	2019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	135	2020
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃ Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020	123	2020
MOCVD Epitaxy of Ultrawide Bandgap β-(Al_xGa_1–x)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	100	2020
High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium L Meng, Z Feng, AFMAU Bhuiyan, H Zhao Crystal Growth & Design 22 (6), 3896-3904, 2022	79	2022
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020	79	2020
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020	63	2020
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020	61	2020
Mg acceptor doping in MOCVD (010) β-Ga₂O₃ Z Feng, AFMAU Bhuiyan, NK Kalarickal, S Rajan, H Zhao Applied Physics Letters 117 (22), 222106, 2020	60	2020
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021	55	2021
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020	55	2020
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021	52	2021
Vacuum Annealed β-Ga₂O₃ Recess Channel MOSFETs With 8.56 kV Breakdown Voltage S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ... IEEE Electron Device Letters 43 (12), 2029-2032, 2022	45	2022
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ... Applied Physics Letters 121 (5), 2022	44	2022
Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ... Applied Physics Letters 122 (18), 2023	40	2023
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020	40	2020
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021	32	2021
MOCVD growth of (010) β-(Al_xGa_1−x)₂O₃ thin films AFMAU Bhuiyan, Z Feng, L Meng, H Zhao Journal of Materials Research 36 (23), 4804-4815, 2021	28	2021
A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1− x) 2O3 J Sarker, S Broderick, AFM Bhuiyan, Z Feng, H Zhao, B Mazumder Applied Physics Letters 116 (15), 2020	28	2020

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