| Multiplierless implementation of noisy Izhikevich neuron with low-cost digital design S Haghiri, A Zahedi, A Naderi, A Ahmadi IEEE transactions on biomedical circuits and systems 12 (6), 1422-1430, 2018 | 51 | 2018 |
| Temperature dependence of electrical characteristics of carbon nanotube field‐effect transistors: a quantum simulation study A Naderi, SM Noorbakhsh, H Elahipanah Journal of Nanomaterials 2012 (1), 532625, 2012 | 43 | 2012 |
| Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor A Naderi Materials Science in Semiconductor Processing 31, 223-228, 2015 | 37 | 2015 |
| High speed and low digital resources implementation of Hodgkin-Huxley neuronal model using base-2 functions S Haghiri, A Naderi, B Ghanbari, A Ahmadi IEEE Transactions on Circuits and Systems I: Regular Papers 68 (1), 275-287, 2020 | 35 | 2020 |
| Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region A Naderi, M Ghodrati The European Physical Journal Plus 132, 1-11, 2017 | 30 | 2017 |
| LDC–CNTFET: a carbon nanotube field effect transistor with linear doping profile channel A Naderi, P Keshavarzi, AA Orouji Superlattices and Microstructures 50 (2), 145-156, 2011 | 30 | 2011 |
| Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics A Naderi, F Heirani Superlattices and Microstructures 111, 1022-1033, 2017 | 27 | 2017 |
| Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions A Naderi Journal of Computational Electronics 15, 347-357, 2016 | 26 | 2016 |
| Novel carbon nanotube field effect transistor with graded double halo channel A Naderi, P Keshavarzi superlattices and Microstructures 51 (5), 668-679, 2012 | 25 | 2012 |
| Methods in improving the performance of carbon nanotube field effect transistors A Naderi, BA Tahne ECS Journal of Solid State Science and Technology 5 (12), M131, 2016 | 24 | 2016 |
| Electrically-activated source extension graphene nanoribbon field effect transistor: novel attributes and design considerations for suppressing short channel effects A Naderi, P Keshavarzi Superlattices and Microstructures 72, 305-318, 2014 | 24 | 2014 |
| Cut off frequency variation by ambient heating in tunneling pin CNTFETs A Naderi, M Ghodrati ECS Journal of Solid State Science and Technology 7 (2), M6, 2018 | 23 | 2018 |
| A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications H Mohammadi, A Naderi AEU-International Journal of Electronics and Communications 83, 541-548, 2018 | 23 | 2018 |
| Modeling and simulation of combinational CMOS logic circuits by ANFIS M Hayati, A Rezaei, M Seifi, A Naderi Microelectronics Journal 41 (7), 381-387, 2010 | 23 | 2010 |
| An Efficient Digital Realization of Retinal Light Adaptation in Cone Photoreceptors M Ghanbarpour, A Naderi, S Haghiri, A Ahmadi IEEE Transactions on Circuits and Systems I: Regular Papers, 1-9, 2021 | 22 | 2021 |
| Proposal of a doping-less tunneling carbon nanotube field-effect transistor M Ghodrati, A Mir, A Naderi Materials Science and Engineering: B 265, 2021 | 22 | 2021 |
| New structure of tunneling carbon nanotube FET with electrical junction in part of drain region and step impurity distribution pattern M Ghodrati, A Mir, A Naderi AEU-International Journal of Electronics and Communications 117, 153102, 2020 | 22 | 2020 |
| Digital hardware implementation of Morris-Lecar, Izhikevich, and Hodgkin-Huxley neuron models with high accuracy and low resources M Ghanbarpour, A Naderi, B Ghanbari, S Haghiri, A Ahmadi IEEE Transactions on Circuits and Systems I: Regular Papers, 2023 | 21 | 2023 |
| An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region A Naderi, M Ghodrati Turkish Journal of Electrical Engineering and Computer Sciences 26 (5), 2335 …, 2018 | 20 | 2018 |
| A novel SOI-MESFET with symmetrical oxide boxes at both sides of gate and extended drift region into the buried oxide A Naderi, F Heirani AEU-International Journal of Electronics and Communications 85, 91-98, 2018 | 19 | 2018 |
Parviz KeshavarziFaculty of Electrical and Computer Engineering, Semnan UniversityAdresse e-mail validée de semnan.ac.ir