Huixia Fu

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Sheng Menginstitute of physics, chinese academy of scienceAdresse e-mail validée de iphy.ac.cn
Binghai YanProfessor of Physics, Pennsylvania State UniversityAdresse e-mail validée de psu.edu
Hui LiProfessor, BAICSM, Beijing University of Chemical TechnologyAdresse e-mail validée de buct.edu.cn
Jin ZhangNational Center for Nanoscience and Technology；Max Planck Institute (MPSD); IOP, CASAdresse e-mail validée de nanoctr.cn
Hailin PengProfessor at Physical Chemistry, Peking UniversityAdresse e-mail validée de pku.edu.cn
Kehui WuTsientang Inst. Adv. Stu., Hangzhou, China /Previous: Inst. Phys. CASAdresse e-mail validée de iphy.ac.cn
CHEN LanInstitute of Physics, The Chinese Academy of SciencesAdresse e-mail validée de iphy.ac.cn
Cai Cheng (程才)Sichuan Normal UniversityAdresse e-mail validée de sicnu.edu.cn
Wei MaNingxia UniversityAdresse e-mail validée de nxu.edu.cn
Zijing DingBeijing Computational Science Research CenterAdresse e-mail validée de ustc.edu.cn
Chenguang QiuPeking UniversityAdresse e-mail validée de pku.edu.cn
haim beidenkopfWeizmann institute of scienceAdresse e-mail validée de weizmann.ac.il
Claudia FelserMax Planck Institute Chemical Physics of SolidsAdresse e-mail validée de cpfs.mpg.de
Chao LianInstitute of Physics Chinese Academy of SciencesAdresse e-mail validée de iphy.ac.cn
Abhay Kumar NayakUniversity of California, Santa BarbaraAdresse e-mail validée de ucsb.edu
Kaihui LiuSchool of Physics, Peking Univeristy, Beijing, ChinaAdresse e-mail validée de pku.edu.cn
Hao HongPeking UnivsersityAdresse e-mail validée de pku.edu.cn
Yang Zhang (张阳)University of Tennessee Knoxville, MIT, MPI CPfS/IFWAdresse e-mail validée de utk.edu
Hang LiuHumboldt Postdoctoral Fellowship, Max Planck Institute for the Structure and Dynamics of MatterAdresse e-mail validée de mpsd.mpg.de
Ding PeiSynchrotron SOLEILAdresse e-mail validée de synchrotron-soleil.fr

Suivre

Huixia Fu

Chongqing University, China

Adresse e-mail validée de cqu.edu.cn

Condensed Matter Physics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se C Chen, M Wang, J Wu, H Fu, H Yang, Z Tian, T Tu, H Peng, Y Sun, X Xu, ... Science Advances 4 (9), eaat8355, 2018	227	2018
A native oxide high-κ gate dielectric for two-dimensional electronics T Li, T Tu, Y Sun, H Fu, J Yu, L Xing, Z Wang, H Wang, R Jia, J Wu, C Tan, ... Nature Electronics 3 (8), 473-478, 2020	223	2020
Ordered and reversible hydrogenation of silicene J Qiu, H Fu, Y Xu, AI Oreshkin, T Shao, H Li, S Meng, L Chen, K Wu Physical review letters 114 (12), 126101, 2015	152	2015
Exchange bias and quantum anomalous Hall effect in the MnBi₂Te₄/CrI₃ heterostructure H Fu, CX Liu, B Yan Science advances 6 (10), eaaz0948, 2020	126	2020
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi₂O₂Se J Wu, C Qiu, H Fu, S Chen, C Zhang, Z Dou, C Tan, T Tu, T Li, Y Zhang, ... Nano Letters 19 (1), 197-202, 2018	117	2018
Observation of charge to spin conversion in Weyl semimetal at room temperature B Zhao, D Khokhriakov, Y Zhang, H Fu, B Karpiak, AM Hoque, X Xu, ... Physical review research 2 (1), 013286, 2020	113	2020
Intrinsic valley polarization of magnetic VSe2 monolayers J Liu, WJ Hou, C Cheng, HX Fu, JT Sun, S Meng Journal of Physics: Condensed Matter 29 (25), 255501, 2017	111	2017
From silicene to half-silicane by hydrogenation J Qiu, H Fu, Y Xu, Q Zhou, S Meng, H Li, L Chen, K Wu ACS nano 9 (11), 11192-11199, 2015	109	2015
Stacking-dependent electronic structure of bilayer silicene H Fu, J Zhang, Z Ding, H Li, S Meng Applied Physics Letters 104 (13), 2014	102	2014
Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS₂/WS₂ Bilayers J Zhang, H Hong, C Lian, W Ma, X Xu, X Zhou, H Fu, K Liu, S Meng Advanced science 4 (9), 1700086, 2017	101	2017
Suppressed superconductivity in substrate-supported β12 borophene by tensile strain and electron doping C Cheng, JT Sun, H Liu, HX Fu, J Zhang, XR Chen, S Meng 2D Materials 4 (2), 025032, 2017	96	2017
Self-modulation doping effect in the high-mobility layered semiconductor H Fu, J Wu, H Peng, B Yan Physical Review B 97 (24), 241203, 2018	88	2018
Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ... Science advances 5 (5), eaau6696, 2019	86	2019
Resolving the topological classification of bismuth with topological defects AK Nayak, J Reiner, R Queiroz, H Fu, C Shekhar, B Yan, C Felser, ... Science advances 5 (11), eaax6996, 2019	84	2019
Finite-temperature violation of the anomalous transverse Wiedemann-Franz law L Xu, X Li, X Lu, C Collignon, H Fu, J Koo, B Fauqué, B Yan, Z Zhu, ... Science Advances 6 (17), eaaz3522, 2020	83	2020
Single-crystalline van der Waals layered dielectric with high dielectric constant C Zhang, T Tu, J Wang, Y Zhu, C Tan, L Chen, M Wu, R Zhu, Y Liu, H Fu, ... Nature materials 22 (7), 832-837, 2023	80	2023
Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers C Cheng, JT Sun, XR Chen, HX Fu, S Meng Nanoscale 8 (41), 17854-17860, 2016	66	2016
New pathway for hot electron relaxation in two-dimensional heterostructures J Zhang, H Hong, J Zhang, H Fu, P You, J Lischner, K Liu, E Kaxiras, ... Nano Letters 18 (9), 6057-6063, 2018	55	2018
Probing nonequilibrium dynamics of photoexcited polarons on a metal-oxide surface with atomic precision C Guo, X Meng, H Fu, Q Wang, H Wang, Y Tian, J Peng, R Ma, Y Weng, ... Physical Review Letters 124 (20), 206801, 2020	48	2020
Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers L Kou, H Fu, Y Ma, B Yan, T Liao, A Du, C Chen Physical Review B 97 (7), 075429, 2018	44	2018

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