Silicon device scaling to the sub-10-nm regime M Ieong, B Doris, J Kedzierski, K Rim, M Yang
Science 306 (5704), 2057-2060, 2004
727 2004 Six-band MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim
Journal of Applied Physics 94 (2), 1079-1095, 2003
622 2003 Fabrication and analysis of deep submicron strained-Si n-MOSFET's K Rim, JL Hoyt, JF Gibbons
IEEE Transactions on Electron Devices 47 (7), 1406-1415, 2000
537 2000 Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
413 2002 Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
394 2001 Strained Si NMOSFETs for high performance CMOS technology K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ...
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001
345 2001 Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs K Rim, K Chan, L Shi, D Boyd, J Ott, N Klymko, F Cardone, L Tai, ...
IEEE International Electron Devices Meeting 2003, 3.1. 1-3.1. 4, 2003
296 2003 Transconductance enhancement in deep submicron strained Si n-MOSFETs K Rim, JL Hoyt, JF Gibbons
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
241 1998 Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs K Rim, J Welser, JL Hoyt, JF Gibbons
Proceedings of International Electron Devices Meeting, 517-520, 1995
225 1995 High-performance CMOS devices on hybrid crystal oriented substrates BB Doris, KW Guarini, M Ieong, S Narasimha, K Rim, JW Sleight, M Yang
US Patent 7,329,923, 2008
193 2008 Strained silicon on insulator structures K Rim
US Patent 6,603,156, 2003
191 2003 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
179 2000 Structure and method for mobility enhanced MOSFETs with unalloyed silicide Y Liu, D Chidambarrao, O Gluschenkov, JR Holt, RT Mo, K Rim
US Patent 8,217,423, 2012
132 2012 Strained Si CMOS (SS CMOS) technology: opportunities and challenges K Rim, R Anderson, D Boyd, F Cardone, K Chan, H Chen, S Christansen, ...
Solid-State Electronics 47 (7), 1133-1139, 2003
128 2003 Semiconductor-on-insulator lateral pin photodetector with a reflecting mirror and backside contact and method for forming the same GM Cohen, K Rim, DL Rogers, JD Schaub, M Yang
US Patent 6,667,528, 2003
110 * 2003 Laser surface annealing of antimony doped amorphized semiconductor region D Chidambarrao, S Jain, W Henson, K Rim
US Patent App. 11/308,108, 2007
109 2007 Strained silicon CMOS on hybrid crystal orientations KK Chan, M Ieong, A Reznicek, DK Sadana, L Shi, M Yang
US Patent 7,087,965, 2006
105 2006 Strained-silicon CMOS device and method A Bryant, Q Ouyang, K Rim
US Patent 7,227,205, 2007
103 2007 Integration and optimization of embedded-SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies LT Su, J Pellerin, SF Huang, M Khare, D Schepis, K Rim, S Liming, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
96 2005 Channel doping impact on FinFETs for 22nm and beyond CH Lin, R Kambhampati, RJ Miller, TB Hook, A Bryant, W Haensch, ...
2012 Symposium on VLSI Technology (VLSIT), 15-16, 2012
91 2012 