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33 2022 Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors Q Kong, L Liu, Z Zheng, C Sun, Z Zhou, L Jiao, A Kumar, R Shao, J Zhang, ...
IEEE Transactions on Electron Devices 70 (4), 2059-2066, 2023
12 2023 First demonstration of BEOL-compatible 3D fin-gate oxide semiconductor Fe-FETs Q Kong, L Liu, Z Zheng, C Sun, A Kumar, R Shao, Z Zhou, L Jiao, J Zhang, ...
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Light: Science & Applications 13 (1), 206, 2024
3 2024 Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature G Zheng, Y Wang, H Xu, R Khazaka, L Muehlenbein, S Luo, X Chen, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
2 2023 Robust training of optical neural network with practical errors using genetic algorithm: A case study in silicon-on-insulator-based photonic integrated chips R Shao, G Zhao, G Zhang, X Gong
2021 International Conference on IC Design and Technology (ICICDT), 1-4, 2021
2 2021 Top-Gate Indium-Tin-Oxide Power Transistors Featuring High Breakdown Voltage of 156 V J Xie, Y Wang, Z Zheng, Y Kang, X Chen, G Zheng, R Shao, K Han, ...
IEEE Electron Device Letters, 2024
1 2024 Novel Field-Plate Integrated Mesa-Type InGaAs/InP Avalanche Photodiode C Xuanqi, J Zhang, H Xu, R Shao, Y Wang, G Zheng, X Gong
2022 International Conference on IC Design and Technology (ICICDT), 48-50, 2022
1 2022 Understanding Bias Stress-Induced Instabilities in ALD-Deposited ZnO FeFETs Featuring HZO-Al2 O3 -HZO Ferroelectric Stack C Sun, Q Kong, G Liu, D Zhang, L Jiao, X Wang, J Zhang, H Xu, Y Feng, ...
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2024 Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77 X Chen, G Liu, W Shi, Y Kang, Q Kong, Y Wang, R Shao, BY Nguyen, ...
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024
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