A Group-IV Ferromagnetic Semiconductor: Mnx Ge1−x YD Park, AT Hanbicki, SC Erwin, CS Hellberg, JM Sullivan, JE Mattson, ...
Science 295 (5555), 651-654, 2002
1078 2002 Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor AT Hanbicki, BT Jonker, G Itskos, G Kioseoglou, A Petrou
Applied Physics Letters 80 (7), 1240-1242, 2002
916 2002 Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact BT Jonker, G Kioseoglou, AT Hanbicki, CH Li, PE Thompson
Nature Physics 3 (8), 542-546, 2007
504 2007 Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier AT Hanbicki, OMJ Van’t Erve, R Magno, G Kioseoglou, CH Li, BT Jonker, ...
Applied Physics Letters 82 (23), 4092-4094, 2003
472 2003 Valley polarization and intervalley scattering in monolayer MoS2 G Kioseoglou, AT Hanbicki, M Currie, AL Friedman, D Gunlycke, ...
Applied Physics Letters 101 (22), 2012
360 2012 Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2 AT Hanbicki, M Currie, G Kioseoglou, AL Friedman, BT Jonker
Solid State Communications 203, 16-20, 2015
347 2015 Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry OMJ Van’t Erve, AT Hanbicki, M Holub, CH Li, C Awo-Affouda, ...
Applied Physics Letters 91 (21), 2007
344 2007 Magnetoresistance of Mn: Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix YD Park, A Wilson, AT Hanbicki, JE Mattson, T Ambrose, G Spanos, ...
Applied Physics Letters 78 (18), 2739-2741, 2001
251 2001 Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence KM McCreary, AT Hanbicki, GG Jernigan, JC Culbertson, BT Jonker
Scientific reports 6 (1), 19159, 2016
233 2016 Double Indirect Interlayer Exciton in a MoSe2 /WSe2 van der Waals Heterostructure AT Hanbicki, HJ Chuang, MR Rosenberger, CS Hellberg, SV Sivaram, ...
ACS nano 12 (5), 4719-4726, 2018
224 2018 Nano-“squeegee” for the creation of clean 2D material interfaces MR Rosenberger, HJ Chuang, KM McCreary, AT Hanbicki, SV Sivaram, ...
ACS applied materials & interfaces 10 (12), 10379-10387, 2018
197 2018 Large‐Area Synthesis of Continuous and Uniform MoS2 Monolayer Films on Graphene KM McCreary, AT Hanbicki, JT Robinson, E Cobas, JC Culbertson, ...
Advanced Functional Materials 24 (41), 6449-6454, 2014
194 2014 Comparison of Fe/Schottky and tunnel barrier contacts for electrical spin injection into GaAs OMJ Van’t Erve, G Kioseoglou, AT Hanbicki, CH Li, BT Jonker, R Mallory, ...
Applied Physics Letters 84 (21), 4334-4336, 2004
173 2004 A-and B-exciton photoluminescence intensity ratio as a measure of sample quality for transition metal dichalcogenide monolayers KM McCreary, AT Hanbicki, SV Sivaram, BT Jonker
Apl Materials 6 (11), 2018
169 2018 Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2 PD Cunningham, AT Hanbicki, KM McCreary, BT Jonker
ACS nano 11 (12), 12601-12608, 2017
169 2017 The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2 KM McCreary, AT Hanbicki, S Singh, RK Kawakami, GG Jernigan, ...
Scientific reports 6 (1), 35154, 2016
156 2016 Optical polarization and intervalley scattering in single layers of MoS2 and MoSe2 G Kioseoglou, AT Hanbicki, M Currie, AL Friedman, BT Jonker
Scientific reports 6 (1), 25041, 2016
148 2016 Charge Trapping and Exciton Dynamics in Large-Area CVD Grown MoS2 PD Cunningham, KM McCreary, AT Hanbicki, M Currie, BT Jonker, ...
The Journal of Physical Chemistry C 120 (10), 5819-5826, 2016
144 2016 Exchange bias of the interface spin system at the Fe/MgO interface Y Fan, KJ Smith, G Lüpke, AT Hanbicki, R Goswami, CH Li, HB Zhao, ...
Nature nanotechnology 8 (6), 438-444, 2013
138 2013 Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering <?format ?>in Spin-Polarized Light-Emitting Diodes RM Stroud, AT Hanbicki, YD Park, G Kioseoglou, AG Petukhov, BT Jonker, ...
Physical review letters 89 (16), 166602, 2002
130 2002