Perspective: Toward efficient GaN-based red light emitting diodes using europium doping B Mitchell, V Dierolf, T Gregorkiewicz, Y Fujiwara
Journal of Applied Physics 123 (16), 2018
132 2018 Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center N Woodward, J Poplawsky, B Mitchell, A Nishikawa, Y Fujiwara, V Dierolf
Applied Physics Letters 98 (1), 2011
57 2011 The role of donor-acceptor pairs in the excitation of Eu-ions in GaN: Eu epitaxial layers B Mitchell, J Poplawsky, D Lee, A Koizumi, Y Fujiwara, V Dierolf
Journal of Applied Physics 115 (20), 2014
52 2014 Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, ...
Scientific reports 6 (1), 18808, 2016
39 2016 Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment W Zhu, B Mitchell, D Timmerman, A Uedono, A Koizumi, Y Fujiwara
APL Materials 4 (5), 2016
32 2016 Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe B Mitchell, D Lee, D Lee, A Koizumi, J Poplawsky, Y Fujiwara, V Dierolf
Physical Review B—Condensed Matter and Materials Physics 88 (12), 121202, 2013
25 2013 Charge state of vacancy defects in Eu-doped GaN B Mitchell, N Hernandez, D Lee, A Koizumi, Y Fujiwara, V Dierolf
Physical Review B 96 (6), 064308, 2017
24 2017 High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy W Zhu, B Mitchell, D Timmerman, A Koizumi, T Gregorkiewicz, Y Fujiwara
MRS Advances 2 (3), 159-164, 2017
24 2017 Excitation Efficiency and Limitations of the Luminescence of D Timmerman, B Mitchell, S Ichikawa, J Tatebayashi, M Ashida, ...
Physical Review Applied 13 (1), 014044, 2020
22 2020 Thermodynamics and Kinetics of Three D Lee, B Mitchell, Y Fujiwara, V Dierolf
Physical Review Letters 112 (20), 205501, 2014
22 2014 Color-tunablility in GaN LEDs based on atomic emission manipulation under current injection B Mitchell, R Wei, J Takatsu, D Timmerman, T Gregorkiewicz, W Zhu, ...
ACS Photonics 6 (5), 1153-1161, 2019
19 2019 Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity T Inaba, D Lee, R Wakamatsu, T Kojima, B Mitchell, A Capretti, ...
AIP advances 6 (4), 2016
19 2016 Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields NT Woodward, N Nepal, B Mitchell, IW Feng, J Li, HX Jiang, JY Lin, ...
Applied Physics Letters 99 (12), 2011
19 2011 Vibrationally induced center reconfiguration in co-doped GaN: Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels B Mitchell, D Lee, Y Fujiwara, V Dierolf
Applied Physics Letters 103 (24), 2013
18 2013 Carrier dynamics and excitation of D Timmerman, B Mitchell, S Ichikawa, M Nagai, M Ashida, Y Fujiwara
Physical Review B 101 (24), 245306, 2020
15 2020 Synthesis and characterization of a liquid Eu precursor (EuCppm2) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy B Mitchell, A Koizumi, T Nunokawa, R Wakamatsu, D Lee, Y Saitoh, ...
Materials Chemistry and Physics 193, 140-146, 2017
13 2017 Emission enhancement and its mechanism of Eu-doped GaN by strain engineering T Inaba, B Mitchell, A Koizumi, Y Fujiwara
Optical Materials Express 7 (4), 1381-1387, 2017
12 2017 Re-excitation of trivalent europium ions doped into gallium nitride revealed through photoluminescence under pulsed laser excitation W Zhu, R Wei, D Timmerman, T Gregorkiewicz, B Mitchell, Y Fujiwara, ...
ACS Photonics 5 (3), 875-880, 2018
11 2018 A fan-tastic quantitative exploration of Ohm’s law B Mitchell, R Ekey, R McCullough, W Reitz
The Physics Teacher 56 (2), 75-78, 2018
10 2018 Temporally modulated energy shuffling in highly interconnected nanosystems B Mitchell, H Austin, D Timmerman, V Dierolf, Y Fujiwara
Nanophotonics 10 (2), 851-876, 2020
7 2020 
Yasufumi FujiwaraOsaka UniversityAdresse e-mail validée de mat.eng.osaka-u.ac.jp