| Low noise Al0. 85Ga0. 15As0. 56Sb0. 44 avalanche photodiodes on InP substrates S Lee, SH Kodati, B Guo, AH Jones, M Schwartz, M Winslow, CH Grein, ... Applied Physics Letters 118 (8), 2021 | 55 | 2021 |
| AlInAsSb avalanche photodiodes on InP substrates SH Kodati, S Lee, B Guo, AH Jones, M Schwartz, M Winslow, NA Pfiester, ... Applied Physics Letters 118 (9), 2021 | 46 | 2021 |
| High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes S Lee, X Jin, H Jung, H Lewis, Y Liu, B Guo, SH Kodati, M Schwartz, ... Optica 10 (2), 147-154, 2023 | 39 | 2023 |
| Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates S Lee, B Guo, SH Kodati, H Jung, M Schwartz, AH Jones, M Winslow, ... Applied Physics Letters 120 (7), 2022 | 29 | 2022 |
| Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate S Lee, M Winslow, CH Grein, SH Kodati, AH Jones, DR Fink, P Das, ... Scientific Reports 10 (1), 16735, 2020 | 26 | 2020 |
| Investigation of carrier localization in InAs/AlSb type-II superlattice material system S Lee, HJ Jo, S Mathews, JA Simon, TJ Ronningen, SH Kodati, DR Fink, ... Applied Physics Letters 115 (21), 2019 | 22 | 2019 |
| Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range B Guo, X Jin, S Lee, SZ Ahmed, AH Jones, X Xue, B Liang, HIJ Lewis, ... Journal of Lightwave Technology 40 (14), 4758-4764, 2022 | 21 | 2022 |
| Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes B Guo, SZ Ahmed, X Xue, AK Rockwell, J Ha, S Lee, B Liang, AH Jones, ... Journal of Lightwave Technology 40 (17), 5934-5942, 2022 | 13 | 2022 |
| Optical constants of Al0. 85Ga0. 15As0. 56Sb0. 44 and Al0. 79In0. 21As0. 74Sb0. 26 B Guo, AH Jones, S Lee, SH Kodati, B Liang, X Xue, NA Pfiester, ... Applied Physics Letters 119 (17), 2021 | 12 | 2021 |
| Determination of background doping polarity of unintentionally doped semiconductor layers DR Fink, S Lee, SH Kodati, V Rogers, TJ Ronningen, M Winslow, ... Applied Physics Letters 116 (7), 2020 | 11 | 2020 |
| InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability B Guo, M Schwartz, SH Kodati, KM McNicholas, H Jung, S Lee, ... APL Photonics 8 (11), 2023 | 7 | 2023 |
| Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes HIJ Lewis, X Jin, B Guo, S Lee, H Jung, SH Kodati, B Liang, S Krishna, ... Scientific Reports 13 (1), 9936, 2023 | 6 | 2023 |
| Simulation of impact ionization coefficients in InAlAs/InAsSb type-II superlattice material systems M Winslow, SH Kodati, S Lee, DR Fink, TJ Ronningen, JC Campbell, ... Journal of Electronic Materials 50, 7293-7302, 2021 | 6 | 2021 |
| Low noise AlInAsSb avalanche photodiodes on InP substrates for 1.55 µm infrared applications SH Kodati, S Lee, B Guo, AH Jones, M Schwartz, M Winslow, NA Pfiester, ... Infrared Technology and Applications XLVII 11741, 382-389, 2021 | 6 | 2021 |
| Linear mode avalanche photodiodes with antimonide multipliers on InP substrates S Krishna, S Lee, SH Kodati, M Schwartz, H Jung, TJ Ronningen, B Guo, ... IEEE Journal of Quantum Electronics 58 (4), 1-7, 2022 | 5 | 2022 |
| Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate TJ Ronningen, SH Kodati, X Jin, S Lee, H Jung, X Tao, HIJ Lewis, ... Applied Physics Letters 123 (13), 2023 | 4 | 2023 |
| Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates M Schwartz, SH Kodati, S Lee, H Jung, D Chen, CH Grein, TJ Ronningen, ... AIP Advances 12 (9), 2022 | 3 | 2022 |
| Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature Y Liu, X Jin, SH Lee, H Jung, HIJ Lewis, B Guo, SH Kodati, M Schawrtz, ... Optical Components and Materials XXI 12882, 135-142, 2024 | 2 | 2024 |
| Thick Al0. 85Ga0. 15As0. 56Sb0. 44 avalanche photodiodes on InP substrate S Lee, SH Kodati, B Guo, AH Jones, M Schwartz, H Jung, N Pfiester, ... Infrared Technology and Applications XLVII 11741, 9-18, 2021 | 2 | 2021 |
| Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure DR Fink, S Lee, SH Kodati, V Dahiya, TJ Ronningen, M Winslow, ... Infrared Technology and Applications XLVI 11407, 24-34, 2020 | 2 | 2020 |
Sanjay KrishnaProfessor and George R Smith Chair of Engineering, ECE Department, Ohio State UniversityAdresse e-mail validée de osu.edu