Ultralong dephasing time in InGaAs quantum dots P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... Physical Review Letters 87 (15), 157401, 2001 | 1245 | 2001 |
Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... Physical Review B 66 (8), 081306, 2002 | 279 | 2002 |
Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... IEEE Journal of selected topics in quantum electronics 8 (5), 984-991, 2002 | 127 | 2002 |
Ultrafast carrier dynamics in InGaAs quantum dot materials and devices P Borri, S Schneider, W Langbein, D Bimberg Journal of Optics A: Pure and Applied Optics 8 (4), S33, 2006 | 111 | 2006 |
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature P Borri, S Schneider, W Langbein, U Woggon, AE Zhukov, VM Ustinov, ... Applied Physics Letters 79 (16), 2633-2635, 2001 | 109 | 2001 |
Linewidth enhancement factor in InGaAs quantum-dot amplifiers S Schneider, P Borri, W Langbein, U Woggon, RL Sellin, D Ouyang, ... IEEE journal of quantum electronics 40 (10), 1423-1429, 2004 | 99 | 2004 |
Excited-state gain dynamics in InGaAs quantum-dot amplifiers S Schneider, P Borri, W Langbein, U Woggon, RL Sellin, D Ouyang, ... IEEE photonics technology letters 17 (10), 2014-2016, 2005 | 96 | 2005 |
Relaxation and dephasing of multiexcitons in semiconductor quantum dots P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... Physical review letters 89 (18), 187401, 2002 | 69 | 2002 |
Self-induced transparency in InGaAs quantum-dot waveguides S Schneider, P Borri, W Langbein, U Woggon, J Förstner, A Knorr, ... Applied physics letters 83 (18), 3668-3670, 2003 | 61 | 2003 |
Reliability of high power laser diodes with external optical feedback D Bonsendorf, S Schneider, J Meinschien, JW Tomm High-Power Diode Laser Technology and Applications XIV 9733, 973302, 2016 | 14 | 2016 |
Coherent Light–Matter Interaction in InGaAs Quantum Dots: Dephasing Time and Optical Rabi Oscillations P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... physica status solidi (b) 233 (3), 391-400, 2002 | 10 | 2002 |
Ultrafast gain recovery dynamics of the excited state in InGaAs quantum dot amplifiers S Schneider, U Woggon, P Borri, W Langbein, D Ouyang, RL Sellin, ... (CLEO). Conference on Lasers and Electro-Optics, 2005. 3, 1674-1676, 2005 | 8 | 2005 |
Power scaling of kW-diode lasers optimized for material processing applications S Schneider, I Kardosh, M Voß, S Liebl, J Meinschien High-Power Diode Laser Technology and Applications XIII 9348, 49-57, 2015 | 7 | 2015 |
Dephasing of biexcitons in InGaAs quantum dots P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... physica status solidi (b) 238 (3), 593-600, 2003 | 7 | 2003 |
Carrier dynamics in electrically pumped semiconductor quantum dot amplifiers S Schneider Shaker, 2004 | 3 | 2004 |
Quantum Dot Devices-Linewidth Enhancement Factor in InGaAs Quantum-Dot Amplifiers S Schneider, P Borri, W Langbein, U Woggon, RL Sellin, D Ouyang, ... IEEE Journal of Quantum Electronics 40 (10), 1423-1429, 2004 | 1 | 2004 |
Temperature‐Dependent Time‐Resolved Four‐Wave Mixing in InGaAs Quantum Dots P Borri, W Langbein, S Schneider, U Woggon, RL Sellin, D Ouyang, ... physica status solidi (a) 190 (2), 517-521, 2002 | 1 | 2002 |
Laservorrichtung zur Erzeugung von Laserstrahlung sowie 3D-Druck-Vorrichtung mit einer derartigen Laservorrichtung A Krasnaberski, S Schneider DE Patent 102019126888A8, 2022 | | 2022 |
Compact and energy efficient IR laser architecture (Conference Presentation) D Hauschild, S Schneider, A Gruetz Components and Packaging for Laser Systems VI 11261, 112610X, 2020 | | 2020 |
High power line generating diode lasers S Schneider, I Kardosh, M Wirth, M Ihns, T Mitra, V Wirth High-Power Diode Laser Technology XVI 10514, 217-224, 2018 | | 2018 |