LEDs for solid-state lighting: performance challenges and recent advances MH Crawford
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1028-1040, 2009
1191 2009 Effect of dislocation density on efficiency droop in GaInN∕ GaN light-emitting diodes MF Schubert, S Chhajed, JK Kim, EF Schubert, DD Koleske, MH Crawford, ...
Applied Physics Letters 91 (23), 2007
509 2007 Research challenges to ultra‐efficient inorganic solid‐state lighting JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ...
Laser & Photonics Reviews 1 (4), 307-333, 2007
476 2007 Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
414 2014 Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities Q Dai, MF Schubert, MH Kim, JK Kim, EF Schubert, DD Koleske, ...
Applied Physics Letters 94 (11), 2009
371 2009 AlGaN/GaN quantum well ultraviolet light emitting diodes J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ...
Applied physics letters 73 (12), 1688-1690, 1998
356 1998 Light‐extraction enhancement of GaInN light‐emitting diodes by graded‐refractive‐index indium tin oxide anti‐reflection contact JK Kim, S Chhajed, MF Schubert, EF Schubert, AJ Fischer, MH Crawford, ...
Advanced materials 20 (4), 801-804, 2008
341 2008 Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers WW Chow, KD Choquette, MH Crawford, KL Lear, GR Hadley
IEEE Journal of Quantum Electronics 33 (10), 1810-1824, 1997
332 1997 Excitonic gain and laser emission in ZnSe-based quantum wells J Ding, H Jeon, T Ishihara, M Hagerott, AV Nurmikko, H Luo, N Samarth, ...
Physical review letters 69 (11), 1707, 1992
319 1992 Graded band gap ohmic contact to p ‐ZnSe Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ...
Applied physics letters 61 (26), 3160-3162, 1992
314 1992 Nanocrystal-based light-emitting diodes utilizing high-efficiency nonradiative energy transfer for color conversion M Achermann, MA Petruska, DD Koleske, MH Crawford, VI Klimov
Nano letters 6 (7), 1396-1400, 2006
283 2006 The band-gap bowing of SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
283 1999 Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes Q Dai, Q Shan, J Wang, S Chhajed, J Cho, EF Schubert, MH Crawford, ...
Applied Physics Letters 97 (13), 2010
275 2010 The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes D Zhu, J Xu, AN Noemaun, JK Kim, EF Schubert, MH Crawford, ...
Applied Physics Letters 94 (8), 2009
247 2009 Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ...
Applied physics letters 86 (3), 2005
239 2005 Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays Q Li, KR Westlake, MH Crawford, SR Lee, DD Koleske, JJ Figiel, ...
Optics express 19 (25), 25528-25534, 2011
237 2011 Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
235 2004 Quasi-two-dimensional excitons in (Zn, Cd) Se/ZnSe quantum wells: Reduced exciton–LO-phonon coupling due to confinement effects NT Pelekanos, J Ding, M Hagerott, AV Nurmikko, H Luo, N Samarth, ...
Physical Review B 45 (11), 6037, 1992
235 1992 Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
217 2004 (Zn, Cd) Se/ZnSe quantum-well lasers: excitonic gain in an inhomogeneously broadened quasi-two-dimensional system J Ding, M Hagerott, T Ishihara, H Jeon, AV Nurmikko
Physical Review B 47 (16), 10528, 1993
213 1993 
Daniel KoleskeTechnical Staff, Sandia National LaboratoriesAdresse e-mail validée de sandia.gov
