Jiarui Gong

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Dong LiuUniversity of Wisconsin MadisonAdresse e-mail validée de wisc.edu
Jie ZhouResearch Associate, University of Wisconsin - MadisonAdresse e-mail validée de wisc.edu
Sang June ChoElectrical Engineering at UW-MadisonAdresse e-mail validée de wisc.edu
Kwangeun KimSchool of Electronics and Information Engineering, Korea Aerospace UniversityAdresse e-mail validée de kau.ac.kr
Tien Khee NgPrincipal Scientist, KAUST; Fellow of IET, Fellow of IOPAdresse e-mail validée de kaust.edu.sa
Jung-Hun SeoUniversity at Buffalo, SUNYAdresse e-mail validée de buffalo.edu
Boon S. OoiKing Abdullah University of Science & Technology (KAUST)Adresse e-mail validée de kaust.edu.sa
Jeongpil ParkUniversity of Wisconsin - MadisonAdresse e-mail validée de wisc.edu
Munho KimAssistant Professor of EEE at Nanyang Technological UniversityAdresse e-mail validée de ntu.edu.sg
Moheb SheikhiVirginia Tech UniversityAdresse e-mail validée de vt.edu
In-Kyu LeePhD student of Electrical and Computer Engineering, University of Wisconsin-MadisonAdresse e-mail validée de wisc.edu
Vincent GambinNorthrop GrummanAdresse e-mail validée de ngc.com
Yi LuUniversity of Wisconsin-Madison; King Abdullah University of Science and TechnologyAdresse e-mail validée de wisc.edu
Chirag GuptaAssistant Professor, UW MadisonAdresse e-mail validée de wisc.edu
Timothy A, GrotjohnProfessor of Electrical and Computer Engineering, Michigan State UniversityAdresse e-mail validée de egr.msu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityAdresse e-mail validée de ece.osu.edu
Yei Hwan JungAssistant Professor, Hanyang UniversityAdresse e-mail validée de hanyang.ac.kr
Shubhra S. PasayatAssistant Professor, University of Wisconsin MadisonAdresse e-mail validée de wisc.edu
Kuangye LuPostdoctral Associate, MITAdresse e-mail validée de mit.edu
Prof. Jeehwan KimMITAdresse e-mail validée de mit.edu

Suivre

Jiarui Gong

Texas A&M University

Adresse e-mail validée de tamu.edu

Semiconductor Physics Interface Physics Device Physics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ... Applied physics letters 113 (1), 2018	99	2018
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ... Applied Physics Letters 112 (8), 2018	85	2018
Lattice-mismatched semiconductor heterostructures D Liu, SJ Cho, JH Seo, K Kim, M Kim, J Shi, X Yin, W Choi, C Zhang, ... arXiv preprint arXiv:1812.10225, 2018	42	2018
Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs SJ Cho, D Liu, A Hardy, J Kim, J Gong, CJ Herrera-Rodriguez, E Swinnich, ... AIP Advances 10 (12), 2020	41	2020
P-type silicon as hole supplier for nitride-based UVC LEDs SJ Cho, D Liu, JH Seo, R Dalmau, K Kim, J Park, J Gong, D Zhao, F Wang, ... New Journal of Physics 21 (2), 023011, 2019	32	2019
Reduction of leakage current in GaN Schottky diodes through ultraviolet/ozone plasma treatment K Kim, D Liu, J Gong, Z Ma IEEE Electron Device Letters 40 (11), 1796-1799, 2019	21	2019
AlGaN/GaN Schottky-gate HEMTs With UV/O₃-treated gate interface K Kim, TJ Kim, H Zhang, D Liu, YH Jung, J Gong, Z Ma IEEE Electron Device Letters 41 (10), 1488-1491, 2020	20	2020
Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements J Gong, Z Zheng, D Vincent, J Zhou, J Kim, D Kim, TK Ng, BS Ooi, ... Journal of Applied Physics 132 (13), 2022	19	2022
Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs D Liu, SJ Cho, H Zhang, CR Carlos, ARK Kalapala, J Park, J Kim, ... AIP Advances 9 (8), 2019	15	2019
Synthesis and characteristics of a monocrystalline GaAs/β-Ga2O3 pn heterojunction J Zhou, J Gong, M Sheikhi, A Dheenan, Q Wang, H Abbasi, Y Liu, ... Applied Surface Science 663, 160176, 2024	14	2024
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes J Gong, J Zhou, P Wang, TH Kim, K Lu, S Min, R Singh, M Sheikhi, ... Advanced Electronic Materials 9 (5), 2201309, 2023	14	2023
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN J Gong, K Lu, J Kim, TK Ng, D Kim, J Zhou, D Liu, J Kim, BS Ooi, Z Ma Japanese Journal of Applied Physics 61 (1), 011003, 2021	14	2021
Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) pn heterojunction determined by X-ray photoelectron spectroscopy J Gong, J Zhou, A Dheenan, M Sheikhi, F Alema, TK Ng, SS Pasayat, ... Applied Surface Science 655, 159615, 2024	13	2024
0.86 kV p-Si/(001)-Ga₂O₃ heterojunction diode S Xie, MT Alam, J Gong, Q Lin, M Sheikhi, J Zhou, F Alema, A Osinsky, ... IEEE Electron Device Letters, 2024	13	2024
Characteristics of grafted monocrystalline Si/β-Ga2O3p–n heterojunction J Gong, D Kim, H Jang, F Alema, Q Wang, J Zhou, Y Li, TK Ng, S Qiu, ... Applied Physics Letters 124 (26), 2024	11	2024
Metal-Al2O3-GaN capacitors with an ultraviolet/ozone plasma-treated interface K Kim, J Kim, J Gong, D Liu, Z Ma Japanese Journal of Applied Physics 59 (3), 030908, 2020	10	2020
Characteristics of native oxides-interfaced GaAs/Ge np diodes J Zhou, J Gong, S Lal, J Kim, W Lin, C Chen, C Li, Y Lu, S Qiu, Y Dong, ... IEEE Electron Device Letters, 2024	6	2024
Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 npn double heterojunctions J Zhou, A Dheenan, J Gong, C Adamo, P Marshall, M Sheikhi, TH Tsai, ... arXiv preprint arXiv:2308.06575, 2023	6	2023
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting J Gong, D Kim, H Jang, F Alema, Q Wang, TK Ng, S Qiu, J Zhou, X Su, ... arXiv preprint arXiv:2305.19138, 2023	6	2023
Passivation of CdTe/MgCdTe double heterostructure by dielectric thin films deposited using atomic layer deposition HN Abbasi, X Qi, J Gong, Z Ju, S Min, YH Zhang, Z Ma Journal of Applied Physics 134 (13), 2023	5	2023

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