Xi Tang

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Baikui LiShenzhen UniversityAdresse e-mail validée de szu.edu.cn
Kevin J. ChenHong Kong University of Science and TechnologyAdresse e-mail validée de ust.hk
Zhaofu ZHANGWuhan University, University of Cambridge, Hong Kong University of Science and TechnologyAdresse e-mail validée de whu.edu.cn
Hui LiAnhui University/the Hong Kong University of Science and TechnologyAdresse e-mail validée de ahu.edu.cn
Jin WeiPeking UniversityAdresse e-mail validée de pku.edu.cn
Yunyou LuApple Inc.Adresse e-mail validée de apple.com
Shu YangUniversity of Science and Technology of China; HKUST; University of CambridgeAdresse e-mail validée de ustc.edu.cn
Mengyuan HuaSouthern university of science and technologyAdresse e-mail validée de sustech.edu.cn
Zhikai TangTexas InstrumentsAdresse e-mail validée de ti.com
Sima DimitrijevGriffith UniversityAdresse e-mail validée de griffith.edu.au
Sen HuangInstitute of Microelectronics, Chinese Academy of SciencesAdresse e-mail validée de ime.ac.cn
Hamid Amini MoghadamGriffith University, School of Engineering and Built Environment, Brisbane, Australia QueenslandAdresse e-mail validée de griffith.edu.au
Qingkai QIANCollege of Optoelectronic Engineering, Chongqing UniversityAdresse e-mail validée de cqu.edu.cn
Nam-Trung NguyenProfessor and Australian Laureate FellowAdresse e-mail validée de griffith.edu.au
Sergii GolovynskyiCollege of Optoelectronic Engineering, Shenzhen UniversityAdresse e-mail validée de szu.edu.cn
Jun ZhangARC DECRA&Future Fellow, Senior lecturer at School of EBE, QMNC, Griffith UniversityAdresse e-mail validée de griffith.edu.au

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Xi Tang

Anhui University

Adresse e-mail validée de ahu.edu.cn - Page d'accueil

Wide-bandgap semiconductor device technology III-nitride semiconductor optoelectronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen IEEE Electron Device Letters 34 (11), 1373-1375, 2013	299	2013
Mechanism of Threshold Voltage Shift in-GaN Gate AlGaN/GaN Transistors X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev IEEE Electron Device Letters 39 (8), 1145-1148, 2018	138	2018
Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015	99	2015
Influence of AlN passivation on dynamic ON-resistance and electric field distribution in high-voltage AlGaN/GaN-on-Si HEMTs Z Tang, S Huang, X Tang, B Li, KJ Chen IEEE Transactions on Electron Devices 61 (8), 2785-2792, 2014	66	2014
Nb2CTx MXene Nanosheets for Dye Adsorption Y Yan, H Han, Y Dai, H Zhu, W Liu, X Tang, W Gan, H Li ACS Appl. Nano Mater. 4, 11763−11769, 2021	62	2021
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015	57	2015
Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation Z Zhang, B Huang, Q Qian, Z Gao, X Tang, B Li Apl Materials 8 (4), 2020	55	2020
Dynamic of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination G Tang, J Wei, Z Zhang, X Tang, M Hua, H Wang, KJ Chen IEEE Electron Device Letters 38 (7), 937-940, 2017	43	2017
Barrier inhomogeneity of Schottky diode on nonpolar AlN grown by physical vapor transport Q Zhou, H Wu, H Li, X Tang, Z Qin, D Dong, Y Lin, C Lu, R Qiu, R Zheng, ... IEEE Journal of the Electron Devices Society 7, 662-667, 2019	41	2019
Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector X Tang, F Ji, H Wang, Z Jin, H Li, B Li, J Wang Applied physics letter 119 (1), 013503, 2021	35	2021
An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT J Wei, M Zhang, B Li, X Tang, KJ Chen IEEE Transactions on Electron Devices 65 (7), 2757-2764, 2018	34	2018
Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias B Li, H Li, J Wang, X Tang IEEE Electron Device Letters 40 (9), 1389-1392, 2019	33	2019
Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center Q Zhou, Z Zhang, H Li, S Golovynskyi, X Tang, H Wu, J Wang, B Li Apl Materials 8 (8), 2020	32	2020
Channel-to-channel coupling in normally-off GaN double-channel MOS-HEMT J Wei, J Lei, X Tang, B Li, S Liu, KJ Chen IEEE Electron Device Letters 39 (1), 59-62, 2017	29	2017
Revealing the nitridation effects on gan surface by first-principles calculation and X-Ray/ultraviolet photoemission spectroscopy Z Zhang, B Li, Q Qian, X Tang, M Hua, B Huang, KJ Chen IEEE Transactions on Electron Devices 64 (10), 4036-4043, 2017	29	2017
P-doping-free III-nitride high electron mobility light-emitting diodes and transistors B Li, X Tang, J Wang, KJ Chen Applied Physics Letters 105 (3), 2014	29	2014
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode B Li, X Tang, KJ Chen Applied Physics Letters 106 (9), 2015	27	2015
III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances X Tang, B Li, Y Lu, H Wang, C Liu, J Wei, KJ Chen 2015 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2015	26	2015
Homological aspects of the dual Auslander transpose X Tang, Z Huang Forum Mathematicum 27 (6), 3717-3743, 2015	25	2015
Characterization of static and dynamic behaviors in AlGaN/GaN-on-Si power transistors with photonic-ohmic drain X Tang, B Li, Z Zhang, G Tang, J Wei, KJ Chen IEEE Transactions on Electron Devices 63 (7), 2831-2837, 2016	22	2016

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