Mehdi Saremi

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Arash Yazdanpanah GoharriziAssociate Professor at SBUAdresse e-mail validée de sbu.ac.ir
Ali Afzali-KushaUniversity of TehranAdresse e-mail validée de ut.ac.ir
Behzad EbrahimiAssistant Professor of Electrical Engineering, Science & Research Branch, Islamic Azad UniversityAdresse e-mail validée de srbiau.ac.ir
Michael KozickiArizona State UniversityAdresse e-mail validée de asu.edu
Robert J. NemanichDepartment of Physics, Arizona State UniversityAdresse e-mail validée de asu.edu
Maitreya DuttaThe University of Texas at San AntonioAdresse e-mail validée de utsa.edu
Franz KoeckDept. of Physics, Arizona State UniversityAdresse e-mail validée de asu.edu
Raghuraj HathwarArizona State UniversityAdresse e-mail validée de asu.edu
Stephen GoodnickArizona State UniversityAdresse e-mail validée de asu.edu
Srabanti ChowdhuryStanford UniversityAdresse e-mail validée de stanford.edu
Maria MitkovaProfessor of Electrical and Computer Engineering Boise State UniversityAdresse e-mail validée de boisestate.edu
Adnan MahmudCisco Systems Inc., Arizona State University, University of California, Berkeley, Haas School ofAdresse e-mail validée de berkeley.edu
Yago Gonzalez-VeloArizona State UniversityAdresse e-mail validée de asu.edu
Debayan MahalanabisArizona State UniversityAdresse e-mail validée de micron.com
Arthur H EdwardsSenior Research Physicist, Air Force Research LaboratoryAdresse e-mail validée de spaceforce.mil
Masoumeh SaremiAdresse e-mail validée de fs.lu.ac.ir
Hossein AghababaUniversity of TehranAdresse e-mail validée de ut.ac.ir

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Mehdi Saremi

IEEE Senior Member, Senior Staff in Samsung Semiconductor

Adresse e-mail validée de asu.edu - Page d'accueil

Device simulation and modeling


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits M Saremi, A Afzali-Kusha, S Mohammadi Microelectronic Engineering 95, 74-82, 2012	134	2012
A Novel PNPN-Like Z-Shaped Tunnel Field-Effect Transistor With Improved Ambipolar Behavior and RF Performance RM Imenabadi, M Saremi, WG Vandenberghe IEEE Transactions on Electron Devices 64 (11), 4752 - 4758, 2017	126	2017
Modeling of Lightly Doped Drain and Source Graphene Nanoribbon Field Effect Transistors M Saremi, M Saremi, H Niazi, AY Goharrizi Superlattices and Microstructures 60, 67-72, 2013	94	2013
Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping AY Goharrizi, M Zoghi, M Saremi IEEE Transactions on Electron Devices 63 (9), 3761-3768, 2016	93	2016
Band Gap Tuning of Armchair Graphene Nanoribbons by Using Antidotes M Zoghi, A Yazdanpanah Goharrizi, M Saremi Journal of Electronic Materials 46 (1), 340-346, 2017	77	2017
A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications R Molaei Imen Abadi, M Saremi Journal of Electronic Materials 47 (2), 1091-1098, 2018	63	2018
Analysis of the reverse I-V characteristics of diamond-based PIN diodes M Saremi, R Hathwar, M Dutta, F Koeck, R Nemanich, S Chowdhury, ... Applied Physics Letters 111 (4), 043507, 2017	56	2017
A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi Microelectronics Reliability 51 (12), 2069-2076, 2011	49	2011
SOI LDMOSFET with Up and Down Extended Stepped Drift Region M Saremi, M Saremi, H Niazi, M Saremi, A Yazdanpanah Goharrizi Journal of Electronic Materials 46 (10), 5570-5576, 2017	40	2017
Process variation study of ground plane SOI MOSFET M Saremi, B Ebrahimi, AA Kusha, M Saremi Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on, 66-69, 2010	38	2010
A 4.5- μ m PIN diamond diode for detecting slow neutrons J Holmes, M Dutta, F Koeck, J Brown, B Fox, R Hathwar, H Johnson, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018	37	2018
A physical-based simulation for the dynamic behavior of photodoping mechanism in the chalcogenide materials used in the lateral programmable metallization cells M Saremi Solid State Ionics 290, 1-5, 2016	37	2016
Ground plane SOI MOSFET based SRAM with consideration of process variation M Saremi, B Ebrahimi, A Afzali-Kusha 2010 IEEE international conference of electron devices and solid-state …, 2010	32	2010
Physically Based Predictive Model for Single Event Transients in CMOS Gates M Saremi, A Privat, H Barnaby, L Clark IEEE Transaction on Electron Devices 63 (6), 2248 - 2254, 2016	31	2016
Static impedance behavior of programmable metallization cells S Rajabi, M Saremi, HJ Barnaby, A Edwards, MN Kozicki, M Mitkova, ... Solid-State Electronics 106, 27-33, 2015	29	2015
Modeling and Simulation of the Programmable Metallization Cells (PMCs) and Diamond-Based Power Devices M Saremi Arizona State University, 2017	28	2017
The Effects of Process Variation on the Parametric Model of the Static Impedance Behavior of Programmable Metallization Cell (PMC) M Saremi, S Rajabi, HJ Barnaby, MN Kozicki MRS Proceedings 1692, mrss14-1692-cc09-39, 2014	24	2014
Analytical Relationship between Anion Formation and Carrier-Trap Statistics in Chalcogenide Glass Films M Saremi, H Barnaby, A Edwards, M Kozicki ECS Electrochemistry Letters 4 (7), H29-H31, 2015	22	2015
G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh IEICE Electronics Express 9 (10), 881-887, 2012	21	2012
Carrier Mobility Extraction Method in ChGs in the UV Light Exposure M Saremi Micro and Nano Letters 11 (11), 762 – 764, 2016	15	2016

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