Jinwoo Hwang

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Jared M JohnsonThe Ohio State UniversityAdresse e-mail validée de thermofisher.com
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityAdresse e-mail validée de osu.edu
Menglin Zhu [ORCID: 0000-0001-683...Postdoctoral Researcher, MITAdresse e-mail validée de mit.edu
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUAdresse e-mail validée de osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityAdresse e-mail validée de ece.osu.edu
A F M Anhar Uddin BhuiyanAssistant Professor, Electrical and Computer Engineering, University of Massachusetts LowellAdresse e-mail validée de uml.edu
Zixuan FengThe Ohio State UniversityAdresse e-mail validée de osu.edu
Paul VoylesUniversity of Wisconsin, MadisonAdresse e-mail validée de wisc.edu
Yuewei ZhangUCSBAdresse e-mail validée de ucsb.edu
Sriram KrishnamoorthyUniversity of California, Santa BarbaraAdresse e-mail validée de ucsb.edu
Jack ZhangUCSBAdresse e-mail validée de umail.ucsb.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityAdresse e-mail validée de osu.edu
Chandan JoishiResearch Scientist, The Ohio State UniversityAdresse e-mail validée de osu.edu
Baishakhi MazumderUniversity at BuffaloAdresse e-mail validée de buffalo.edu
Soohyun ImThe State University of New York at BuffaloAdresse e-mail validée de buffalo.edu
Matthew J. KramerDistinguished Scientist, Materials Sciences and Engineering, Ames National LaboratoryAdresse e-mail validée de ameslab.gov
Ambrose SeoUniversity of KentuckyAdresse e-mail validée de uky.edu
Sanyam BajajIntel CorporationAdresse e-mail validée de intel.com
Fatih AkyolYıldız Teknik ÜniversitesiAdresse e-mail validée de yildiz.edu.tr
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraAdresse e-mail validée de mrl.ucsb.edu

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Jinwoo Hwang

Associate Professor, Materials Science and Engineering, Ohio State University

Adresse e-mail validée de osu.edu - Page d'accueil

Materials Science Electron Microscopy Nanotechnology


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017	586	2017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	411	2018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	336	2017
Nanoscale Structure and Structural Relaxation in Bulk Metallic Glass J Hwang, ZH Melgarejo, YE Kalay, I Kalay, MJ Kramer, DS Stone, ... Physical review letters 108 (19), 195505, 2012	235	2012
Tailoring binding abilities by incorporating oxophilic transition metals on 3D nanostructured Ni arrays for accelerated alkaline hydrogen evolution reaction J Kim, H Jung, SM Jung, J Hwang, DY Kim, N Lee, KS Kim, H Kwon, ... Journal of the American Chemical Society 143 (3), 1399-1408, 2020	200	2020
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	170	2019
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019	147	2019
Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films Y Cheng, S Yu, M Zhu, J Hwang, F Yang Physical Review Letters 124 (2), 027202, 2020	145	2020
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied Physics Letters 112 (5), 2018	142	2018
Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe₂ IH Kao, R Muzzio, H Zhang, M Zhu, J Gobbo, S Yuan, D Weber, R Rao, ... Nature materials 21 (9), 1029-1034, 2022	135	2022
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	135	2020
Three-Dimensional Imaging of Individual Dopant Atoms in J Hwang, JY Zhang, AJ D’Alfonso, LJ Allen, S Stemmer Physical review letters 111 (26), 266101, 2013	114	2013
Structural origins of the properties of rare earth nickelate superlattices J Hwang, J Son, JY Zhang, A Janotti, CG Van de Walle, S Stemmer Physical Review B—Condensed Matter and Materials Physics 87 (6), 060101, 2013	108	2013
Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015	103	2015
MOCVD Epitaxy of Ultrawide Bandgap β-(Al_xGa_1–x)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	98	2020
Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO P Moetakef, CA Jackson, J Hwang, L Balents, SJ Allen, S Stemmer Physical Review B—Condensed Matter and Materials Physics 86 (20), 201102, 2012	97	2012
β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ... IEEE Electron Device Letters 42 (6), 899-902, 2021	90	2021
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018	90	2018
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ... Journal of Applied Physics 121 (9), 2017	90	2017
Variable resolution fluctuation electron microscopy on Cu-Zr metallic glass using a wide range of coherent STEM probe size J Hwang, PM Voyles Microscopy and Microanalysis 17 (1), 67-74, 2011	86	2011

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