Asad Fayyaz

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prof. Andrea IraceUniversity of Naples Federico IIAdresse e-mail validée de unina.it
Riccio MicheleUniversity of Naples Federico II - Department of Electrical Engineering and Information technologiesAdresse e-mail validée de unina.it
Gianpaolo Romano, PhDPrincipal R&D Engineer, StarPower Europe, SwitzerlandAdresse e-mail validée de starpowereurope.com
Giovanni BreglioUniversità di Napoli Federico IIAdresse e-mail validée de unina.it
Luca MarescaUniversity of Naples Federico II - Department of Electrical Engineering and Information technologiesAdresse e-mail validée de unina.it
Jesus Urresti IbáñezResearch Associate, Newcastle UniversityAdresse e-mail validée de ncl.ac.uk
Nicholas WrightProfessor of Electronic Materials, Newcastle UniversityAdresse e-mail validée de ncl.ac.uk
Vincenzo d'AlessandroFull Professor of Electronics, University Federico II, Naples, ItalyAdresse e-mail validée de unina.it
Besar AsllaniResearch Engineer at SuperGrid InstituteAdresse e-mail validée de supergrid-institute.com
Frédéric RICHARDEAUCNRS Senior Scientist, Director of Research - Lab. LAPLACE - CNRS - University of Toulouse - FranceAdresse e-mail validée de laplace.univ-tlse.fr
François BoigeGamma Technologies, LLC, Westmont, IL, USAdresse e-mail validée de gtisoft.com
Hervé MorelSenior Researcher (Directeur de Recherche), Univ Lyon, CNRS, INSA Lyon, Lab. AmpèreAdresse e-mail validée de insa-lyon.fr
Dominique PlansonProfesseur des Universités, INSA de LyonAdresse e-mail validée de insa-lyon.fr
Oriol Aviñó SalvadóIMB-CNM, CSICAdresse e-mail validée de imb-cnm.csic.es
Antonio Pio CatalanoAssistant Professor in Electronic Engineering with University of Naples Federico IIAdresse e-mail validée de unina.it
Pat WheelerUniversity of NottinghamAdresse e-mail validée de nottingham.ac.uk
Bassem MouawadUniversity of NottinghamAdresse e-mail validée de nottingham.ac.uk
Abdallah HusseinAssistant Professor, Misurata University. PhD, University of NottinghamAdresse e-mail validée de eng.misuratau.edu.ly
Emre GurpinarSikorsky AircraftAdresse e-mail validée de lmco.com
tao yangUniversity of NottnghamAdresse e-mail validée de nottingham.ac.uk

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Asad Fayyaz

Senior Research Fellow, PEMC Group, University of Nottingham

Adresse e-mail validée de nottingham.ac.uk

SiC GaN Power Devices Wide band-gap


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs G Romano, A Fayyaz, M Riccio, L Maresca, G Breglio, A Castellazzi, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 978-987, 2016	264	2016
SiC power MOSFETs performance, robustness and technology maturity A Castellazzi, A Fayyaz, G Romano, L Yang, M Riccio, A Irace Microelectronics Reliability 58, 164-176, 2016	140	2016
Short-circuit failure mechanism of SiC power MOSFETs G Romano, L Maresca, M Riccio, V d'Alessandro, G Breglio, A Irace, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015	102	2015
Short-circuit robustness of SiC power MOSFETs: Experimental analysis A Castellazzi, A Fayyaz, L Yang, M Riccio, A Irace 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014	82	2014
Transient robustness testing of silicon carbide (SiC) power MOSFETs A Fayyaz, L Yang, A Castellazzi 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013	73	2013
UIS failure mechanism of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016	60	2016
Statistical analysis of the electrothermal imbalances of mismatched parallel SiC power MOSFETs A Borghese, M Riccio, A Fayyaz, A Castellazzi, L Maresca, G Breglio, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019	56	2019
A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs A Fayyaz, G Romano, J Urresti, M Riccio, A Castellazzi, A Irace, N Wright Energies 10 (4), 452, 2017	50	2017
High temperature pulsed-gate robustness testing of SiC power MOSFETs A Fayyaz, A Castellazzi Microelectronics Reliability 55 (9-10), 1724-1728, 2015	46	2015
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs A Fayyaz, L Yang, M Riccio, A Castellazzi, A Irace Microelectronics Reliability 54 (9-10), 2185-2190, 2014	45	2014
Characterization of high-voltage SiC MOSFETs under UIS avalanche stress L Yang, A Fayyaz, A Castellazzi 7th IET International Conference on Power Electronics, Machines and Drives …, 2014	45	2014
Body diode reliability investigation of SiC power MOSFETs A Fayyaz, G Romano, A Castellazzi Microelectronics Reliability 64, 530-534, 2016	38	2016
Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs G Romano, M Riccio, L Maresca, G Breglio, A Irace, A Fayyaz, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016	34	2016
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs A Castellazzi, A Fayyaz, S Zhu, T Oeder, M Pfost 2018 IEEE International Reliability Physics Symposium (IRPS), 4E. 1-1-4E. 1-10, 2018	31	2018
Avalanche ruggedness of parallel SiC power MOSFETs A Fayyaz, B Asllani, A Castellazzi, M Riccio, A Irace Microelectronics Reliability 88, 666-670, 2018	30	2018
Transient out-of-SOA robustness of SiC power MOSFETs A Castellazzi, A Fayyaz, G Romano, M Riccio, A Irace, J Urresti-Ibanez, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-3.1-2A-3.8, 2017	30	2017
Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017	24	2017
SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization F Richardeau, F Boige, A Castellazzi, V Chazal, A Fayyaz, A Borghese, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020	22	2020
V_TH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate B Asllani, A Castellazzi, OA Salvado, A Fayyaz, H Morel, D Planson 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019	20	2019
An efficient simulation methodology to quantify the impact of parameter fluctuations on the electrothermal behavior of multichip SiC power modules A Borghese, AP Catalano, M Riccio, L Codecasa, A Fayyaz, ... Materials Science Forum 963, 855-858, 2019	19	2019

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