| On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers YP Song, RL Van Meirhaeghe, WH Laflere, F Cardon Solid-State Electronics 29 (6), 633-638, 1986 | 681 | 1986 |
| Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures M Depas, B Vermeire, PW Mertens, RL Van Meirhaeghe, MM Heyns Solid-state electronics 38 (8), 1465-1471, 1995 | 362 | 1995 |
| Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O Q Xie, YL Jiang, C Detavernier, D Deduytsche, RL Van Meirhaeghe, ... Journal of applied physics 102 (8), 2007 | 320 | 2007 |
| Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111) S Zhu, RL Van Meirhaeghe, C Detavernier, F Cardon, GP Ru, XP Qu, ... Solid-State Electronics 44 (4), 663-671, 2000 | 299 | 2000 |
| Investigation on the frequency‐dependence of the impedance of the nearly ideally polarizable semiconductor electrodes CdSe, CdS and TiO2 EC Dutoit, RL Van Meirhaeghe, F Cardon, WP Gomes Berichte der Bunsengesellschaft für physikalische Chemie 79 (12), 1206-1213, 1975 | 234 | 1975 |
| Atomic layer deposition of titanium nitride from TDMAT precursor J Musschoot, Q Xie, D Deduytsche, S Van den Berghe, ... Microelectronic Engineering 86 (1), 72-77, 2009 | 220 | 2009 |
| In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon W Knaepen, C Detavernier, RL Van Meirhaeghe, JJ Sweet, C Lavoie Thin Solid Films 516 (15), 4946-4952, 2008 | 194 | 2008 |
| Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation M Depas, RL Van Meirhaeghe, WH Laflere, F Cardon Solid-state electronics 37 (3), 433-441, 1994 | 181 | 1994 |
| Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts RL Van Meirhaeghe, WH Laflere, F Cardon Journal of applied physics 76 (1), 403-406, 1994 | 174 | 1994 |
| Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition Q Xie, J Musschoot, D Deduytsche, RL Van Meirhaeghe, C Detavernier, ... Journal of The Electrochemical Society 155 (9), H688, 2008 | 172 | 2008 |
| A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments GM Vanalme, L Goubert, RL Van Meirhaeghe, F Cardon, P Van Daele Semiconductor science and technology 14 (9), 871, 1999 | 150 | 1999 |
| On the application of the kramers-kronig relations to problems concerning the frequency dependence of electrode impedance RL Van Meirhaeghe, EC Dutoit, F Cardon, WP Gomes Electrochimica Acta 21 (1), 39-43, 1976 | 139 | 1976 |
| High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation D Deduytsche, C Detavernier, RL Van Meirhaeghe, C Lavoie Journal of applied physics 98 (3), 2005 | 138 | 2005 |
| A detailed XPS study of the rare earth compounds EuS and EuF3 R Vercaemst, D Poelman, L Fiermans, RL Van Meirhaeghe, WH Laflere, ... Journal of electron spectroscopy and related phenomena 74 (1), 45-56, 1995 | 135 | 1995 |
| Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition J Dendooven, D Deduytsche, J Musschoot, RL Vanmeirhaeghe, ... Journal of the Electrochemical Society 157 (4), G111, 2010 | 131 | 2010 |
| Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes PL Hanselaer, WH Laflere, RL Van Meirhaeghe, F Cardon Journal of applied physics 56 (8), 2309-2314, 1984 | 130 | 1984 |
| In situ x-ray diffraction study of metal induced crystallization of amorphous germanium W Knaepen, S Gaudet, C Detavernier, RL Van Meirhaeghe, JJ Sweet, ... Journal of Applied Physics 105 (8), 2009 | 126 | 2009 |
| Modeling the conformality of atomic layer deposition: the effect of sticking probability J Dendooven, D Deduytsche, J Musschoot, RL Vanmeirhaeghe, ... Journal of The Electrochemical Society 156 (4), P63, 2009 | 123 | 2009 |
| Electrical characteristics of CoSi2/n-Si (1 0 0) Schottky barrier contacts formed by solid state reaction S Zhu, C Detavernier, RL Van Meirhaeghe, F Cardon, GP Ru, XP Qu, ... Solid-State Electronics 44 (10), 1807-1818, 2000 | 117 | 2000 |
| Phase formation and thermal stability of ultrathin nickel-silicides on Si (100) K De Keyser, C Van Bockstael, RL Van Meirhaeghe, C Detavernier, ... Applied Physics Letters 96 (17), 2010 | 100 | 2010 |
Xin-Ping QuFudan universityAdresse e-mail validée de fudan.edu.cn
