Ron Schrimpf

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Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Robert A ReedVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
SOKRATES T. PANTELIDESProfessor of Physics, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Kenneth GallowayVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Enxia ZhangUniversity of Central FloridaAdresse e-mail validée de ucf.edu
Michael AllesVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Robert A. WellerVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Lloyd MassengillVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Arthur WitulskiResearch Professor Electrical Engineering, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Brian SierawskiResearch Associate Professor, Vanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Andrew SternbergVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Marcus Mendenhallnist or vanderbilt or caltechAdresse e-mail validée de nist.gov
Bharat BhuvaVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Kevin WarrenVanderbilt UniversityAdresse e-mail validée de vanderbilt.edu
Dennis R. BallStaff Engineer, Vanderbilt universityAdresse e-mail validée de vanderbilt.edu
Dimitri LintenImecAdresse e-mail validée de imec.be
Jonathan PellishNASA Goddard Space Flight CenterAdresse e-mail validée de nasa.gov
Sergey RashkeevPrincipal Scientist, Acting Research Director, Qatar Environment & Energy Research InstituteAdresse e-mail validée de qf.org.qa
Dale P. McMorrowNaval Research LaboratoryAdresse e-mail validée de nrl.navy.mil
Steven KosierVanderbilt UniversityAdresse e-mail validée de Vanderbilt.edu

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Ron Schrimpf

Professor of Electrical Engineering, Vanderbilt University

Adresse e-mail validée de vanderbilt.edu

Semiconductor Devices Microelectronics Radiation Effects in Electronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Charge collection and charge sharing in a 130 nm CMOS technology OA Amusan, AF Witulski, LW Massengill, BL Bhuva, PR Fleming, ML Alles, ... IEEE Transactions on nuclear science 53 (6), 3253-3258, 2006	491	2006
Response of advanced bipolar processes to ionizing radiation EW Enlow, RL Pease, W Combs, RD Schrimpf, RN Nowlin IEEE transactions on nuclear science 38 (6), 1342-1351, 1991	415	1991
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994	377	1994
Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002	298	2002
Monte Carlo simulation of single event effects RA Weller, MH Mendenhall, RA Reed, RD Schrimpf, KM Warren, ... IEEE Transactions on Nuclear Science 57 (4), 1726-1746, 2010	293	2010
Defect generation by hydrogen at the Si-SiO2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001	249	2001
Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE Transactions on Nuclear Science 40 (6), 1276-1285, 1993	240	1993
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002	238	2002
ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood 2008 European Conference on Radiation and Its Effects on Components and …, 2008	236	2008
Impact of low-energy proton induced upsets on test methods and rate predictions BD Sierawski, JA Pellish, RA Reed, RD Schrimpf, KM Warren, RA Weller, ... IEEE Transactions on Nuclear Science 56 (6), 3085-3092, 2009	233	2009
Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies B Narasimham, BL Bhuva, RD Schrimpf, LW Massengill, MJ Gadlage, ... IEEE Transactions on Nuclear Science 54 (6), 2506-2511, 2007	231	2007
Single event transient pulse widths in digital microcircuits MJ Gadlage, RD Schrimpf, JM Benedetto, PH Eaton, DG Mavis, M Sibley, ... IEEE transactions on nuclear science 51 (6), 3285-3290, 2004	223	2004
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002	212	2002
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ... IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003	204	2003
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM KM Warren, RA Weller, MH Mendenhall, RA Reed, DR Ball, CL Howe, ... IEEE transactions on nuclear science 52 (6), 2125-2131, 2005	203	2005
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996	202	1996
Trends in the total-dose response of modern bipolar transistors RN Nowlin, EW Enlow, RD Schrimpf, WE Combs IEEE Transactions on Nuclear Science 39 (6), 2026-2035, 1992	198	1992
Radiation effects and soft errors in integrated circuits and electronic devices RD Schrimpf, DM Fleetwood World Scientific, 2004	192	2004
The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 CJ Nicklaw, ZY Lu, DM Fleetwood, RD Schrimpf, ST Pantelides IEEE Transactions on Nuclear Science 49 (6), 2667-2673, 2002	188	2002
Reactions of hydrogen with Si-SiO2 interfaces ST Pantelides, SN Rashkeev, R Buczko, DM Fleetwood, RD Schrimpf IEEE Transactions on Nuclear Science 47 (6), 2262-2268, 2000	185	2000

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