Liang Liu (刘亮)

Citée par

	Toutes	Depuis 2020
Citations	2358	2294
indice h	22	22
indice i10	32	31

640

320

160

480

201820192020202120222023202420257 33 186 338 464 579 639 86

Accès public

Tout afficher

27 articles

24 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Jingsheng ChenProfessor, Department of Materials Science and Engineering, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Weinan Lin (林伟南)Xiamen University, ChinaAdresse e-mail validée de xmu.edu.cn
Xinyu ShuNUS, Tsinghua University, Hangdian UniversityAdresse e-mail validée de u.nus.edu
Qidong XieResearch Fellow, National University of SingaporeAdresse e-mail validée de u.nus.edu
Zhou Jing (周靖)Scientist, IMRE A*STAR, SingaporeAdresse e-mail validée de imre.a-star.edu.sg
Chen ShaohaiSenior Scientist I, IMRE, A*STARAdresse e-mail validée de imre.a-star.edu.sg
Changjian LISouthern University of Science and Technology (SUSTech), National University of Singapore (NUS)Adresse e-mail validée de sustech.edu.cn
Han Wang (王瀚)Professor, Institute of Metal Research (IMR)Adresse e-mail validée de imr.ac.cn
Chenghang ZhouNational University of SingaporeAdresse e-mail validée de u.nus.edu
Xiufeng HanInstitute Of Physics, Chinese Academy Of SciencesAdresse e-mail validée de iphy.ac.cn
Lizhu RenElectrical and Computer Engineering, National University of SingaporeAdresse e-mail validée de nus.edu.sg
Stephen PennycookUniversity of TennesseeAdresse e-mail validée de utk.edu
shikun HeHikstorAdresse e-mail validée de hikstor.com
Qing QIN (秦青)National University of SingaporeAdresse e-mail validée de u.nus.edu
Gan Moog ChowNational University of SingaporeAdresse e-mail validée de nus.edu.sg
Aurelien ManchonProfessor of Physics, CINaM, Aix-Marseille UniversityAdresse e-mail validée de univ-amu.fr
Hongxin YangSchool of Physics, Zhejiang UniversityAdresse e-mail validée de zju.edu.cn
Guowei ZhouShanxi Normal UniversityAdresse e-mail validée de sxnu.edu.cn
Tiejun ZhouHangzhou Dianzi UniversityAdresse e-mail validée de hdu.edu.cn
Lin WANGShanghai Jiao Tong University; NUSAdresse e-mail validée de sjtu.edu.cn

Suivre

Liang Liu (刘亮)

Shanghai Jiao Tong University

Adresse e-mail validée de sjtu.edu.cn - Page d'accueil

Spintronics Noise Magnetic materials


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Symmetry-dependent field-free switching of perpendicular magnetization L Liu, C Zhou, X Shu, C Li, T Zhao, W Lin, J Deng, Q Xie, S Chen, J Zhou, ... Nature Nanotechnology 16 (3), 277-282, 2021	260	2021
Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ... Advanced Functional Materials 29 (25), 1901106, 2019	257	2019
Current-induced magnetization switching in all-oxide heterostructures L Liu, Q Qin, W Lin, C Li, Q Xie, S He, X Shu, C Zhou, Z Lim, J Yu, W Lu, ... Nature nanotechnology 14 (10), 939-944, 2019	196	2019
Emergence of Topological Hall Effect in a SrRuO₃ Single Layer Q Qin, L Liu, W Lin, X Shu, Q Xie, Z Lim, C Li, S He, GM Chow, J Chen Advanced Materials 31 (8), 1807008, 2019	162	2019
Continuously controllable photoconductance in freestanding BiFeO₃ by the macroscopic flexoelectric effect R Guo, L You, W Lin, A Abdelsamie, X Shu, G Zhou, S Chen, L Liu, X Yan, ... Nature communications 11 (1), 2571, 2020	149	2020
Electrical switching of perpendicular magnetization in a single ferromagnetic layer L Liu, J Yu, R González-Hernández, C Li, J Deng, W Lin, C Zhou, T Zhou, ... Physical Review B 101 (22), 220402, 2020	112	2020
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0. 5Zr0. 5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials, 2000057, 2020	94	2020
An Electronic Synapse Based on 2D Ferroelectric CuInP₂S₆ B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang Advanced Electronic Materials 6 (12), 2000760, 2020	87	2020
Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn J Zhou, X Wang, Y Liu, J Yu, H Fu, L Liu, S Chen, J Deng, W Lin, X Shu, ... Science advances 5 (5), eaau6696, 2019	86	2019
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS₂ Layer Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu, X Yu, MBH Breese, T Zhou, ... Advanced Materials 31 (21), 1900776, 2019	84	2019
Current-induced self-switching of perpendicular magnetization in CoPt single layer L Liu, C Zhou, T Zhao, B Yao, J Zhou, X Shu, S Chen, S Shi, S Xi, D Lan, ... Nature Communications 13 (1), 3539, 2022	74	2022
Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing J Zhou, T Zhao, X Shu, L Liu, W Lin, S Chen, S Shi, X Yan, X Liu, J Chen Advanced Materials, 2103672, 2021	65	2021
Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient S Chen, J Yu, Q Xie, X Zhang, W Lin, L Liu, J Zhou, X Shu, R Guo, ... ACS applied materials & interfaces 11 (33), 30446-30452, 2019	59	2019
Magnetic asymmetry induced anomalous spin-orbit torque in IrMn J Zhou, X Shu, Y Liu, X Wang, W Lin, S Chen, L Liu, Q Xie, T Hong, ... Physical Review B 101 (18), 184403, 2020	58	2020
Field-free magnetization switching induced by the unconventional spin–orbit torque from WTe2 Q Xie, W Lin, S Sarkar, X Shu, S Chen, L Liu, T Zhao, C Zhou, H Wang, ... APL Materials 9 (5), 2021	55	2021
Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures H Wang, Y Dai, Z Liu, Q Xie, C Liu, W Lin, L Liu, P Yang, J Wang, ... Advanced Materials 32 (14), 1904415, 2020	46	2020
Interface-engineered electron and hole tunneling R Guo, L Tao, M Li, Z Liu, W Lin, G Zhou, X Chen, L Liu, X Yan, H Tian, ... Science Advances 7 (13), eabf1033, 2021	45	2021
Modulation of Spin–Orbit Torque from SrRuO₃ by Epitaxial‐Strain‐Induced Octahedral Rotation J Zhou, X Shu, W Lin, DF Shao, S Chen, L Liu, P Yang, EY Tsymbal, ... Advanced Materials 33 (30), 2007114, 2021	41	2021
Spin Glass State in Chemical Vapor-Deposited Crystalline Cr₂Se₃ Nanosheets X Zhu, H Liu, L Liu, L Ren, W Li, L Fang, X Chen, L Xie, Y Jing, J Chen, ... Chemistry of Materials 33 (10), 3851-3858, 2021	39	2021
Perpendicular Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction at an Oxide/Ferromagnetic Metal Interface W Lin, B Yang, AP Chen, X Wu, R Guo, S Chen, L Liu, Q Xie, X Shu, Y Hui, ... Physical Review Letters 124 (21), 217202, 2020	37	2020

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs