Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang, JC Lee, ...
Nano letters 18 (1), 434-441, 2018
553 2018 Flexible black phosphorus ambipolar transistors, circuits and AM demodulator W Zhu, MN Yogeesh, S Yang, SH Aldave, JS Kim, S Sonde, L Tao, N Lu, ...
Nano letters 15 (3), 1883-1890, 2015
491 2015 Ion irradiation and defect formation in single layer graphene G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini
Carbon 47 (14), 3201-3207, 2009
279 2009 Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
240 2015 Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee
ACS nano 9 (1), 363-370, 2015
211 2015 Screening length and quantum capacitance in graphene by scanning probe microscopy F Giannazzo, S Sonde, V Raineri, E Rimini
Nano letters 9 (1), 23-29, 2009
137 2009 Mapping the density of scattering centers limiting the electron mean free path in graphene F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri
Nano letters 11 (11), 4612-4618, 2011
127 2011 Electrical properties of the graphene/ S Sonde, F Giannazzo, V Raineri, R Yakimova, JR Huntzinger, A Tiberj, ...
Physical Review B—Condensed Matter and Materials Physics 80 (24), 241406, 2009
121 2009 Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ...
Applied Physics Letters 102 (16), 2013
111 2013 Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p G Eneman, M Wiot, A Brugere, OSI Casain, S Sonde, DP Brunco, ...
IEEE Transactions on Electron Devices 55 (9), 2287-2296, 2008
106 2008 Vertical transistors based on 2D materials: Status and prospects F Giannazzo, G Greco, F Roccaforte, SS Sonde
Crystals 8 (2), 70, 2018
96 2018 Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) C Vecchio, S Sonde, C Bongiorno, M Rambach, R Yakimova, V Raineri, ...
Nanoscale Research Letters 6, 1-7, 2011
78 2011 Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas S Sonde, F Giannazzo, C Vecchio, R Yakimova, E Rimini, V Raineri
Applied Physics Letters 97 (13), 2010
74 2010 Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ...
2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016
72 2016 Characterization and sonochemical synthesis of black phosphorus from red phosphorus SH Aldave, MN Yogeesh, W Zhu, J Kim, SS Sonde, AP Nayak, ...
2D Materials 3 (1), 014007, 2016
64 2016 Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide S Sonde, F Giannazzo, V Raineri, E Rimini
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
52 2009 Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices J Lin, S Sonde, C Chen, L Stan, K Achari, S Ramanathan, S Guha
2016 IEEE international electron devices meeting (IEDM), 34.5. 1-34.5. 4, 2016
48 2016 Irradiation damage in graphene on SiO {sub 2} probed by local mobility measurements F Giannazzo, S Sonde, V Raineri, E Rimini
Applied Physics Letters 95 (26), 2009
45 2009 Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ...
Applied Physics Letters 104 (22), 2014
43 2014 Optical, morphological and spectro‐ scopic characterization of graphene on SiO2 F Giannazzo, S Sonde, V Raineri, G Patanè, G Compagnini, F Aliotta, ...
physica status solidi c 7 (3‐4), 1251-1255, 2010
39 2010 
Filippo GiannazzoCNR, Istituto per la Microelettronica e i Microsistemi, Catania, ItalyAdresse e-mail validée de imm.cnr.it