| Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor … J Choi, J Yoon, MJ Kim, K Pak, C Lee, H Lee, K Jeong, K Ihm, S Yoo, ... ACS applied materials & interfaces 11 (32), 29113-29123, 2019 | 36 | 2019 |
| Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications S Kim, SH Lee, MJ Kim, WS Hwang, HS Jin, BJ Cho IEEE Electron Device Letters 42 (4), 517-520, 2021 | 35 | 2021 |
| Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate SJ Lee, MJ Kim, TY Lee, TI Lee, JH Bong, SW Shin, SH Kim, WS Hwang, ... AIP Advances 9 (12), 2019 | 31 | 2019 |
| Fabrication of metal-deposited indium tin oxides: its applications to 385 nm light-emitting diodes MJ Kim, TG Kim ACS Applied Materials & Interfaces 8 (8), 5453-5457, 2016 | 29 | 2016 |
| Novel vapor-phase synthesis of flexible, homogeneous organic–inorganic hybrid gate dielectric with sub 5 nm equivalent oxide thickness MJ Kim, K Pak, WS Hwang, SG Im, BJ Cho ACS applied materials & interfaces 10 (43), 37326-37334, 2018 | 28 | 2018 |
| Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics MJ Kim, K Pak, J Choi, TI Lee, WS Hwang, SG Im, BJ Cho ACS applied materials & interfaces 11 (47), 44513-44520, 2019 | 25 | 2019 |
| Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current TI Lee, HJ Ahn, MJ Kim, EJ Shin, SH Lee, SW Shin, WS Hwang, HY Yu, ... IEEE Electron Device Letters 40 (4), 502-505, 2019 | 24 | 2019 |
| An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation Y Yoon, MJ Kim, BJ Cho, M Shin, WS Hwang Applied Physics Letters 119 (12), 2021 | 21 | 2021 |
| Long‐term retention of low‐power, nonvolatile organic transistor memory based on ultrathin, trilayered dielectric containing charge trapping functionality C Lee, K Pak, J Choi, MJ Kim, BJ Cho, SG Im Advanced Functional Materials 30 (43), 2004665, 2020 | 19 | 2020 |
| Large‐Area, Conformal, and Uniform Synthesis of Hybrid Polymeric Film via Initiated Chemical Vapor Deposition MJ Kim, J Jeong, TI Lee, J Kim, Y Tak, H Park, SG Im, BJ Cho Macromolecular Materials and Engineering 306 (3), 2000608, 2021 | 18 | 2021 |
| Capacitance boosting by anti-ferroelectric blocking layer in charge trap flash memory device EJ Shin, SW Shin, SH Lee, TI Lee, MJ Kim, HJ Ahn, JH Kim, WS Hwang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2020 | 17 | 2020 |
| Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process J Jeong, MJ Kim, WS Hwang, BJ Cho Advanced Electronic Materials 7 (10), 2100375, 2021 | 10 | 2021 |
| A study on optimal indium tin oxide thickness as transparent conductive electrodes for near-ultraviolet light-emitting diodes MJ Kim Materials 16 (13), 4718, 2023 | 9 | 2023 |
| H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs TI Lee, MC Nguyen, HJ Ahn, MJ Kim, EJ Shin, WS Hwang, HY Yu, R Choi, ... IEEE Electron Device Letters 40 (9), 1350-1353, 2019 | 9 | 2019 |
| Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks MJ Kim, C Lee, EJ Shin, TI Lee, S Kim, J Jeong, J Choi, WS Hwang, ... Advanced Functional Materials 31 (41), 2103291, 2021 | 8 | 2021 |
| Hf‐and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices MJ Kim, C Lee, J Jeong, S Kim, TI Lee, EJ Shin, WS Hwang, SG Im, ... Advanced Electronic Materials 7 (4), 2001197, 2021 | 8 | 2021 |
| Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer K Kim, H Kim, SW Lee, MY Lee, G Lee, Y Park, H Kim, YH Lee, M Kim, ... IEEE Transactions on Electron Devices 70 (5), 2588-2593, 2023 | 7 | 2023 |
| Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film J Oh, S Park, SH Lee, S Kim, H Lee, C Lee, W Hong, JH Cha, M Kang, ... Advanced Science, 2308847, 2024 | 6 | 2024 |
| The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs) J Choi, MJ Kim, JY Kim, EK Lee, C Lee, Y Park, J Kang, JI Park, BJ Cho, ... Small Methods 7 (11), 2300628, 2023 | 6 | 2023 |
| Vapor-phase synthesis of a reagent-free self-healing polymer film with rapid recovery of toughness at room temperature and under ambient conditions K Jeong, MJ Kwak, Y Kim, Y Lee, H Mun, MJ Kim, BJ Cho, SQ Choi, ... Soft Matter 18 (36), 6907-6915, 2022 | 5 | 2022 |
Byung Jin ChoKAISTAdresse e-mail validée de kaist.edu