Two-dimensional materials and their prospects in transistor electronics F Schwierz, J Pezoldt, R Granzner
Nanoscale 7 (18), 8261-8283, 2015
788 2015 Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications V Cimalla, J Pezoldt, O Ambacher
Journal of Physics D: Applied Physics 40 (20), S19, 2007
486 2007 Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide CY Wang, Y Dai, J Pezoldt, B Lu, T Kups, V Cimalla, O Ambacher
Crystal growth and Design 8 (4), 1257-1260, 2008
160 2008 Nanoelectromechanical devices for sensing applications V Cimalla, F Niebelschütz, K Tonisch, C Foerster, K Brueckner, I Cimalla, ...
Sensors and Actuators B: Chemical 126 (1), 24-34, 2007
150 2007 Phase selective growth and properties of rhombohedral and cubic indium oxide CY Wang, V Cimalla, H Romanus, T Kups, G Ecke, T Stauden, M Ali, ...
Applied physics letters 89 (1), 2006
134 2006 Growth of cubic InN on V Cimalla, J Pezoldt, G Ecke, R Kosiba, O Ambacher, L Spieß, G Teichert, ...
Applied physics letters 83 (17), 3468-3470, 2003
109 2003 Integrated multilayer stretchable printed circuit boards paving the way for deformable active matrix S Biswas, A Schoeberl, Y Hao, J Reiprich, T Stauden, J Pezoldt, ...
Nature communications 10 (1), 4909, 2019
106 2019 Densification of thin aluminum oxide films by thermal treatments V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ...
Materials Sciences and Applications 5 (08), 628, 2014
81 2014 Nanomechanics of single crystalline tungsten nanowires V Cimalla, CC Röhlig, J Pezoldt, M Niebelschütz, O Ambacher, ...
Journal of Nanomaterials 2008 (1), 638947, 2008
71 2008 Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ...
Journal of applied physics 100 (9), 2006
68 2006 Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing V Cimalla, KV Karagodina, J Pezoldt, G Eichhorn
Materials Science and Engineering: B 29 (1-3), 170-175, 1995
68 1995 High-frequency performance of GaN high-electron mobility transistors on 3C-SiC/Si substrates with Au-free ohmic contacts W Jatal, U Baumann, K Tonisch, F Schwierz, J Pezoldt
IEEE Electron device letters 36 (2), 123-125, 2014
67 2014 Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers H Romanus, V Cimalla, JA Schaefer, L Spieß, G Ecke, J Pezoldt
Thin Solid Films 359 (2), 146-149, 2000
65 2000 Graphene nanoribbons for electronic devices Z Geng, B Hähnlein, R Granzner, M Auge, AA Lebedev, VY Davydov, ...
Annalen der Physik 529 (11), 1700033, 2017
61 2017 Micro‐and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications K Brueckner, F Niebelschuetz, K Tonisch, C Foerster, V Cimalla, ...
physica status solidi (a) 208 (2), 357-376, 2011
56 2011 Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates DJ As, T Frey, D Schikora, K Lischka, V Cimalla, J Pezoldt, R Goldhahn, ...
Applied Physics Letters 76 (13), 1686-1688, 2000
55 2000 Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films R Grieseler, B Hähnlein, M Stubenrauch, T Kups, M Wilke, M Hopfeld, ...
Applied Surface Science 292, 997-1001, 2014
53 2014 Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces J Pezoldt, C Förster, P Weih, P Masri
Applied surface science 184 (1-4), 79-83, 2001
52 2001 The estimation of sputtering yields for SiC and Si G Ecke, R Kosiba, V Kharlamov, Y Trushin, J Pezoldt
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
50 2002 Simulation of 50-nm gate graphene nanoribbon transistors C Nanmeni Bondja, Z Geng, R Granzner, J Pezoldt, F Schwierz
Electronics 5 (1), 3, 2016
49 2016 