Crystalline graphdiyne nanosheets produced at a gas/liquid or liquid/liquid interface R Matsuoka, R Sakamoto, K Hoshiko, S Sasaki, H Masunaga, K Nagashio, ...
Journal of the American Chemical Society 139 (8), 3145-3152, 2017
518 2017 Contact resistivity and current flow path at metal/graphene contact K Nagashio, T Nishimura, K Kita, A Toriumi
Applied Physics Letters 97 (14), 2010
424 2010 Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ...
Nature Electronics 2 (12), 563-571, 2019
336 2019 Purely in-plane ferroelectricity in monolayer SnS at room temperature N Higashitarumizu, H Kawamoto, CJ Lee, BH Lin, FH Chu, I Yonemori, ...
Nature communications 11 (1), 2428, 2020
316 2020 Layer-by-layer dielectric breakdown of hexagonal boron nitride Y Hattori, T Taniguchi, K Watanabe, K Nagashio
ACS nano 9 (1), 916-921, 2015
248 2015 Electrical transport properties of graphene on SiO2 with specific surface structures K Nagashio, T Yamashita, T Nishimura, K Kita, A Toriumi
Journal of Applied Physics 110 (2), 2011
241 2011 Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance K Nagashio, T Nishimura, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
228 2009 Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 2010
217 2010 Mobility variations in mono-and multi-layer graphene films K Nagashio, T Nishimura, K Kita, A Toriumi
Applied physics express 2 (2), 025003, 2009
196 2009 Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165, 2009
188 2009 Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7-9), 1571-1576, 2009
182 2009 High-Electron-Mobility CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi
IEEE transactions on electron devices 58 (5), 1295-1301, 2011
158 2011 Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system T Uwanno, Y Hattori, T Taniguchi, K Watanabe, K Nagashio
2D Materials 2 (4), 041002, 2015
155 2015 Density-of-states limited contact resistance in graphene field-effect transistors K Nagashio, A Toriumi
Japanese Journal of Applied Physics 50 (7R), 070108, 2011
150 2011 Growth mechanism of twin-related and twin-free facet Si dendrites K Nagashio, K Kuribayashi
Acta Materialia 53 (10), 3021-3029, 2005
136 2005 Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor K Nagashio, T Nishimura, K Kita, A Toriumi
Japanese Journal of Applied Physics 49 (5R), 051304, 2010
131 2010 Ge MOSFETs performance: Impact of Ge interface passivation CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010
122 2010 High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3 T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 064201, 2011
98 2011 Solidification and casting B Cantor, K O'Reilly
CRC press, 2016
88 2016 Expansion of the graphdiyne family: a triphenylene-cored analogue R Matsuoka, R Toyoda, R Shiotsuki, N Fukui, K Wada, H Maeda, ...
ACS applied materials & interfaces 11 (3), 2730-2733, 2018
84 2018 