Electronic defects in amorphous oxide semiconductors: A review K Ide, K Nomura, H Hosono, T Kamiya
physica status solidi (a) 216 (5), 1800372, 2019
266 2019 Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors K Ide, Y Kikuchi, K Nomura, M Kimura, T Kamiya, H Hosono
Applied Physics Letters 99 (9), 2011
249 2011 Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor J Kim, T Sekiya, N Miyokawa, N Watanabe, K Kimoto, K Ide, Y Toda, ...
NPG Asia materials 9 (3), e359-e359, 2017
122 2017 Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O K Ide, K Nomura, H Hiramatsu, T Kamiya, H Hosono
Journal of Applied Physics 111 (7), 2012
119 2012 Electron effective mass and mobility limits in degenerate perovskite stannate CA Niedermeier, S Rhode, K Ide, H Hiramatsu, H Hosono, T Kamiya, ...
Physical Review B 95 (16), 161202, 2017
70 2017 Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors K Ide, Y Kikuchi, K Nomura, T Kamiya, H Hosono
Thin Solid Films 520 (10), 3787-3790, 2012
50 2012 Solid phase epitaxial growth of high mobility La: BaSnO3 thin films co-doped with interstitial hydrogen CA Niedermeier, S Rhode, S Fearn, K Ide, MA Moram, H Hiramatsu, ...
Applied Physics Letters 108 (17), 2016
46 2016 Shallow Valence Band of Rutile GeO2 and P-type Doping CA Niedermeier, K Ide, T Katase, H Hosono, T Kamiya
The Journal of Physical Chemistry C 124 (47), 25721-25728, 2020
40 2020 Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films H Tang, K Ishikawa, K Ide, H Hiramatsu, S Ueda, N Ohashi, H Kumomi, ...
Journal of Applied Physics 118 (20), 2015
38 2015 Multiple roles of hydrogen treatments in amorphous in–Ga–Zn–O films H Tang, Y Kishida, K Ide, Y Toda, H Hiramatsu, S Matsuishi, S Ueda, ...
ECS Journal of Solid State Science and Technology 6 (7), P365, 2017
35 2017 SnS thin films prepared by H2S-free process and its p-type thin film transistor FY Ran, Z Xiao, H Hiramatsu, K Ide, H Hosono, T Kamiya
AIP Advances 6 (1), 2016
24 2016 Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon KM Kojima, M Hiraishi, H Okabe, A Koda, R Kadono, K Ide, S Matsuishi, ...
Applied Physics Letters 115 (12), 2019
23 2019 Phonon scattering limited mobility in the representative cubic perovskite semiconductors CA Niedermeier, Y Kumagai, K Ide, T Katase, F Oba, H Hosono, T Kamiya
Physical Review B 101 (12), 125206, 2020
22 2020 Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors K Ide, M Kikuchi, M Ota, M Sasase, H Hiramatsu, H Kumomi, H Hosono, ...
Japanese Journal of Applied Physics 56 (3S), 03BB03, 2017
22 2017 Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors H Tang, K Ide, H Hiramatsu, S Ueda, N Ohashi, H Kumomi, H Hosono, ...
Thin Solid Films 614, 73-78, 2016
22 2016 Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening K Ide, K Ishikawa, H Tang, T Katase, H Hiramatsu, H Kumomi, H Hosono, ...
physica status solidi (a) 216 (5), 1700832, 2019
21 2019 Multiple Color Inorganic Thin‐Film Phosphor, RE ‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature N Watanabe, K Ide, J Kim, T Katase, H Hiramatsu, H Hosono, T Kamiya
physica status solidi (a) 216 (5), 1700833, 2019
20 2019 Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O J Kim, N Miyokawa, T Sekiya, K Ide, Y Toda, H Hiramatsu, H Hosono, ...
Thin Solid Films 614, 84-89, 2016
20 2016 Semiconductor device IDE Keisuke, T Saitoh, Y Kanzaki, Y Takamaru, S Kaneko, H Matsukizono, ...
US Patent App. 15/318,622, 2017
19 2017 Origins of the coloration from structure and valence state of bismuth oxide glasses A Saitoh, K Hayashi, K Hanzawa, S Ueda, S Kawachi, J Yamaura, K Ide, ...
Journal of Non-Crystalline Solids 560, 120720, 2021
18 2021 
Toshio KamiyaTokyo Institute of TechnologyAdresse e-mail validée de msl.titech.ac.jp
