| Flexible ionic‐electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain‐inspired neuromorphic computing RA John, J Ko, MR Kulkarni, N Tiwari, NA Chien, NG Ing, WL Leong, ... Small 13 (32), 1701193, 2017 | 175 | 2017 |
| Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung Applied Physics Letters 98 (11), 2011 | 151 | 2011 |
| Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 … ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... Applied Physics Letters 95 (22), 2009 | 135 | 2009 |
| AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111) S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ... Applied Physics Letters 101 (8), 2012 | 128 | 2012 |
| Gallium Nitride Transistors on Large-Diameter Si(111) Substrate S Arulkumaran, GI Ng Gallium Nitride (GaN): Physics, Devices, and Technology, 63-107, 2015 | 114* | 2015 |
| Reactive sputter deposition and characterization of tantalum nitride thin films K Radhakrishnan, NG Ing, R Gopalakrishnan Materials Science and Engineering: B 57 (3), 224-227, 1999 | 110 | 1999 |
| Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou Applied Physics Letters 98 (16), 2011 | 100 | 2011 |
| InAlN/GaN HEMTs on Si With High of 250 GHz W Xing, Z Liu, H Qiu, K Ranjan, Y Gao, GI Ng, T Palacios IEEE Electron Device Letters 39 (1), 75-78, 2017 | 98 | 2017 |
| 0.10 μm graded InGaAs channel InP HEMT with 305 GHz fTand 340 GHz fmax M Wojtowicz, R Lai, DC Streit, GI Ng, TR Block, KL Tan, PH Liu, ... IEEE Electron Device Letters 15 (11), 477-479, 1994 | 98 | 1994 |
| Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... Applied Physics Letters 103 (14), 2013 | 95 | 2013 |
| High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... IEEE electron device letters 31 (2), 96-98, 2009 | 89 | 2009 |
| Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures WP Hong, GI Ng, PK Bhattacharya, D Pavlidis, S Willing, B Das Journal of Applied Physics 64 (4), 1945-1949, 1988 | 87 | 1988 |
| Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ... Japanese Journal of Applied Physics 51 (11R), 111001, 2012 | 83 | 2012 |
| Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C ZH Liu, S Arulkumaran, GI Ng Applied physics letters 94 (14), 2009 | 80 | 2009 |
| Low-temperature chemical transformations for high-performance solution-processed oxide transistors RA John, NA Chien, S Shukla, N Tiwari, C Shi, NG Ing, N Mathews Chemistry of Materials 28 (22), 8305-8313, 2016 | 77 | 2016 |
| Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ... Applied Physics Express 6 (1), 016501, 2012 | 77 | 2012 |
| Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa Applied physics express 4 (8), 084101, 2011 | 76 | 2011 |
| Improved Linearity for Low-Noise Applications in 0.25-GaN MISHEMTs Using ALDas Gate Dielectric ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ... IEEE Electron Device Letters 31 (8), 803-805, 2010 | 75 | 2010 |
| Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-T-gate AlGaN/GaN HEMTs on Silicon byTreatment S Arulkumaran, GI Ng, S Vicknesh IEEE electron device letters 34 (11), 1364-1366, 2013 | 71 | 2013 |
| Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ... Thin Solid Films 515 (10), 4517-4521, 2007 | 70 | 2007 |
