| The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon, B Ku, CJ Kang, ... Nanoscale 12 (26), 14120-14134, 2020 | 137 | 2020 |
| Compliance-free, digital SET and analog RESET synaptic characteristics of sub-tantalum oxide based neuromorphic device Y Abbas, YR Jeon, AS Sokolov, S Kim, B Ku, C Choi Scientific reports 8 (1), 1228, 2018 | 120 | 2018 |
| Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure AS Sokolov, YR Jeon, S Kim, B Ku, D Lim, H Han, MG Chae, J Lee, ... Applied Surface Science 434, 822-830, 2018 | 117 | 2018 |
| Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film D Kim, YR Jeon, B Ku, C Chung, TH Kim, S Yang, U Won, T Jeong, ... ACS Applied Materials & Interfaces 13 (44), 52743-52753, 2021 | 78 | 2021 |
| Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics A Sokolov, M Ali, H Li, YR Jeon, MJ Ko, C Choi Advanced Electronic Materials 7 (2), 2000866, 2021 | 77 | 2021 |
| Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device AS Sokolov, YR Jeon, S Kim, B Ku, C Choi NPG Asia Materials 11 (1), 5, 2019 | 68 | 2019 |
| Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device S Kim, Y Abbas, YR Jeon, AS Sokolov, B Ku, C Choi Nanotechnology 29 (41), 415204, 2018 | 63 | 2018 |
| Study of in situ silver migration in amorphous boron nitride CBRAM device YR Jeon, Y Abbas, AS Sokolov, S Kim, B Ku, C Choi ACS applied materials & interfaces 11 (26), 23329-23336, 2019 | 61 | 2019 |
| Cellulose nanocrystal based Bio‐Memristor as a green artificial synaptic device for neuromorphic computing applications T Hussain, H Abbas, C Youn, H Lee, T Boynazarov, B Ku, YR Jeon, ... Advanced Materials Technologies 7 (2), 2100744, 2022 | 57 | 2022 |
| Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching AS Sokolov, SK Son, D Lim, HH Han, YR Jeon, JH Lee, C Choi Journal of the American Ceramic Society 100 (12), 5638-5648, 2017 | 52 | 2017 |
| Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse AS Sokolov, YR Jeon, B Ku, C Choi Journal of Alloys and Compounds 822, 153625, 2020 | 48 | 2020 |
| Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices A Ali, Y Abbas, H Abbas, YR Jeon, S Hussain, BA Naqvi, C Choi, J Jung Applied Surface Science 525, 146390, 2020 | 43 | 2020 |
| Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing Y Abbas, AS Sokolov, YR Jeon, S Kim, B Ku, C Choi Journal of Alloys and Compounds 759, 44-51, 2018 | 43 | 2018 |
| The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film Y Abbas, SR Dugasani, MT Raza, YR Jeon, SH Park, C Choi Nanotechnology 30 (33), 335203, 2019 | 41 | 2019 |
| Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics Y Abbas, IS Han, AS Sokolov, YR Jeon, C Choi Journal of Materials Science: Materials in Electronics 31, 903-909, 2020 | 37 | 2020 |
| Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material YR Jeon, J Choi, JD Kwon, MH Park, Y Kim, C Choi ACS Applied Materials & Interfaces 13 (8), 10161-10170, 2021 | 33 | 2021 |
| Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface B Ku, Y Abbas, S Kim, AS Sokolov, YR Jeon, C Choi Journal of Alloys and Compounds 797, 277-283, 2019 | 32 | 2019 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 30 | 2020 |
| Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device D Lee, AS Sokolov, B Ku, YR Jeon, HT Kim, GH Kim, C Choi Applied Surface Science 547, 149140, 2021 | 22 | 2021 |
| The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor YJ Kim, D Lim, HH Han, AS Sergeevich, YR Jeon, JH Lee, SK Son, ... Microelectronic Engineering 178, 284-288, 2017 | 17 | 2017 |
