Saurabh V. Suryavanshi

Citirano

	Sve	Od 2020.
Citati	1759	1371
H-indeks	14	13
i10-indeks	14	13

300

150

225

201620172018201920202021202220232024202511 54 136 182 232 293 291 248 254 49

Javni pristup

Prikaži sve

14 članaka

1 članak*

dostupno

nije dostupno

Na temelju uvjeta financiranja

Suautori

Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACPotvrđena adresa e-pošte na stanford.edu
Connor J. McClellanStanford UniversityPotvrđena adresa e-pošte na stanford.edu
Eilam YalonTechnion, Israel Institute of TechnologyPotvrđena adresa e-pošte na technion.ac.il
Alexander J GabourieDeepSim, Inc.Potvrđena adresa e-pošte na deepsim.io
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Potvrđena adresa e-pošte na csic.es
Amir Barati FarimaniRussell V. Trader Associate Professor at Carnegie Mellon UniversityPotvrđena adresa e-pošte na stanford.edu
Feng XiongAssociate Professor, Department of Electrical and Computer Engineering, University of PittsburghPotvrđena adresa e-pošte na pitt.edu
Christopher M. NeumannIntelPotvrđena adresa e-pošte na intel.com
Runjie (Lily) XuStanford UniversityPotvrđena adresa e-pošte na apple.com
Lucian ShifrenPotvrđena adresa e-pošte na shifren.com
Aditya SoodAssistant Professor, Princeton UniversityPotvrđena adresa e-pošte na stanford.edu
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorPotvrđena adresa e-pošte na stanford.edu
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordPotvrđena adresa e-pošte na stanford.edu
Burak AslanAssistant Professor, Bogazici UniversityPotvrđena adresa e-pošte na boun.edu.tr
Sanchit DeshmukhPhD, Stanford UniversityPotvrđena adresa e-pošte na alumni.stanford.edu
Sam VaziriStanford UniversityPotvrđena adresa e-pošte na stanford.edu
Greg YericCerfe LabsPotvrđena adresa e-pošte na cerfelabs.com
Ankush AgarwalFacebookPotvrđena adresa e-pošte na fb.com
Michal Jakub MleczkoDevice Engineer, IntelPotvrđena adresa e-pošte na stanford.edu
Dan DessauUniversity of ColoradoPotvrđena adresa e-pošte na Colorado.edu

Prati

Saurabh V. Suryavanshi

Synopsys

Potvrđena adresa e-pošte na suryavanshi.me - Početna stranica

Semiconductors EDA AI


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Energy Dissipation in Monolayer MoS₂ Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017	241	2017
Low Variability in Synthetic Monolayer MoS₂ Devices KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop ACS nano 11 (8), 8456-8463, 2017	226	2017
High Current Density in Monolayer MoS₂ Doped by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021	217	2021
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices KKH Smithe, CD English, SV Suryavanshi, E Pop 2D Materials 4 (1), 011009, 2016	195	2016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017	189	2017
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS₂ KKH Smithe, CD English, SV Suryavanshi, E Pop Nano letters 18 (7), 4516-4522, 2018	163	2018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019	141	2019
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities SV Suryavanshi, E Pop Journal of Applied Physics 120 (22), 2016	118	2016
Effective n-type doping of monolayer MoS₂ by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017	65	2017
Thermal boundary conductance of two-dimensional MoS2 interfaces SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop Journal of Applied Physics 126 (5), 2019	51	2019
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2 AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop 2D Materials 8 (1), 011001, 2020	46	2020
Real-time* multiple object tracking (MOT) for autonomous navigation A Agarwal, S Suryavanshi Technical report, 2017	26	2017
2D Device Trends CJ McClellan, SV Suryavanshi, CD English, KKH Smithe, CS Bailey, ... unpublished 3, 3824-3830, 2023	16	2023
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 235-236, 2015	15	2015
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs CA Paz de Araujo, J Celinska, CR McWilliams, L Shifren, G Yeric, ... Apl Materials 10 (4), 2022	8	2022
Enhanced Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices KKH Smithe, CD English, SV Suryavanshi, E Pop arXiv preprint arXiv:1608.00987, 2016	6	2016
Thermal boundary conductance of the MOS₂-SiO₂interface SV Suryavanshi, AJ Gabourie, AB Farimani, E Yalon, E Pop 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 26-29, 2017	5	2017
Scaling theory of two-dimensional field effect transistors SV Suryavanshi, CD English, HSP Wong, E Pop arXiv preprint arXiv:2105.10791, 2021	4	2021
Stanford 2D Semiconductor (S2DS) Transistor Model SV Suryavanshi, E Pop Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016	4	2016
High mobility in monolayer MoS₂ devices grown by chemical vapor deposition KKH Smithe, CD English, SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 239-240, 2015	4	2015

Sustav trenutno ne može provesti ovu radnju. Pokušajte ponovo kasnije.

Članci 1–20

Godišnji broj citata

Dvostruki navodi

Spojeni navodi

Dodavanje suautoraSuautori

Prati

Citirano

Suautori