| Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening T Fujii, Y Gao, R Sharma, EL Hu, SP DenBaars, S Nakamura Applied physics letters 84 (6), 855-857, 2004 | 1798 | 2004 |
| Room-temperature continuous-wave lasing in GaN/InGaN microdisks AC Tamboli, ED Haberer, R Sharma, KH Lee, S Nakamura, EL Hu Nature photonics 1 (1), 61-64, 2007 | 355 | 2007 |
| Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ... US Patent 7,846,757, 2010 | 338 | 2010 |
| Demonstration of a semipolar (101¯ 3¯) InGaN∕ GaN green light emitting diode R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ... Applied Physics Letters 87 (23), 2005 | 308 | 2005 |
| Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices H Zhong, JF Kaeding, R Sharma, JS Speck, SP DenBaars, S Nakamura US Patent 7,858,996, 2010 | 292 | 2010 |
| Multi color active regions for white light emitting diode J Raring, R Sharma, C Poblenz US Patent 8,314,429, 2012 | 267 | 2012 |
| Optical device structure using GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister, R Sharma US Patent 9,531,164, 2016 | 264 | 2016 |
| Semiconductor light-emitting device R Sharma, PM Pattison, JF Kaeding, S Nakamura US Patent 8,227,820, 2012 | 263 | 2012 |
| Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution A David, T Fujii, R Sharma, K McGroddy, S Nakamura, SP DenBaars, ... Applied Physics Letters 88 (6), 2006 | 259 | 2006 |
| Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials TA Trottier, MR Krames, R Sharma, FTC Shum US Patent App. 12/887,207, 2011 | 244 | 2011 |
| Method and structure for manufacture of light emitting diode devices using bulk GaN C Poblenz, MC Schmidt, DF Feezell, JW Raring, R Sharma US Patent 8,252,662, 2012 | 212 | 2012 |
| Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction A David, C Meier, R Sharma, FS Diana, SP Denbaars, E Hu, S Nakamura, ... Applied physics letters 87 (10), 2005 | 206 | 2005 |
| Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods R Sharma, EM Hall, C Poblenz, MP D'evelyn US Patent 8,284,810, 2012 | 185 | 2012 |
| Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials TA Trottier, MR Krames, R Sharma, FTC Shum US Patent App. 13/014,622, 2011 | 148 | 2011 |
| Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching Y Gao, T Fujii, R Sharma, K Fujito, SP Denbaars, S Nakamura, EL Hu Japanese journal of applied physics 43 (5A), L637, 2004 | 136 | 2004 |
| Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods R Sharma, EM Hall, C Poblenz, MP D'evelyn US Patent 8,494,017, 2013 | 133 | 2013 |
| 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base A Hanlon, PM Pattison, JF Kaeding, R Sharma, P Fini, S Nakamura Japanese journal of applied physics 42 (6B), L628, 2003 | 133 | 2003 |
| Effect of nitridation on polarity, microstructure, and morphology of AlN films Y Wu, A Hanlon, JF Kaeding, R Sharma, PT Fini, S Nakamura, JS Speck Applied Physics Letters 84 (6), 912-914, 2004 | 126 | 2004 |
| GaN blue photonic crystal membrane nanocavities YS Choi, K Hennessy, R Sharma, E Haberer, Y Gao, SP DenBaars, ... Applied Physics Letters 87 (24), 2005 | 116 | 2005 |
| Free-standing, optically pumped, GaN∕ InGaN microdisk lasers fabricated by photoelectrochemical etching ED Haberer, R Sharma, C Meier, AR Stonas, S Nakamura, SP DenBaars, ... Applied physics letters 85 (22), 5179-5181, 2004 | 112 | 2004 |
