| Reliability and variability of advanced CMOS devices at cryogenic temperatures A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 48 | 2020 |
| Toward automated defect extraction from bias temperature instability measurements D Waldhoer, C Schleich, J Michl, B Stampfer, K Tselios, EG Ioannidis, ... IEEE Transactions on Electron Devices 68 (8), 4057-4063, 2021 | 37 | 2021 |
| Evidence of tunneling driven random telegraph noise in cryo-CMOS J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ... 2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021 | 17 | 2021 |
| Comphy v3. 0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ... Microelectronics Reliability 146, 115004, 2023 | 15 | 2023 |
| Single-versus multi-step trap assisted tunneling currents—Part I: Theory C Schleich, D Waldhör, T Knobloch, W Zhou, B Stampfer, J Michl, M Waltl, ... IEEE Transactions on Electron Devices 69 (8), 4479-4485, 2022 | 15 | 2022 |
| Efficient modeling of charge trapping at cryogenic temperatures—Part I: Theory J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ... IEEE Transactions on Electron Devices 68 (12), 6365-6371, 2021 | 14 | 2021 |
| Temperature dependent mismatch and variability in a cryo-CMOS array with 30k transistors A Grill, V John, J Michl, A Beckers, E Bury, S Tyaginov, B Parvais, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 10A. 1-1-10A. 1-6, 2022 | 11 | 2022 |
| Physics-based and closed-form model for cryo-CMOS subthreshold swing A Beckers, J Michl, A Grill, B Kaczer, MG Bardon, B Parvais, B Govoreanu, ... IEEE Transactions on Nanotechnology 22, 590-596, 2023 | 9 | 2023 |
| Analysis of single electron traps in nano-scaled MoS2 FETs at cryogenic temperatures T Knobloch, J Michl, D Waldhör, Y Illarionov, B Stampfer, A Grill, R Zhou, ... Proceedings of the Device Research Conference (DRC), 52-53, 2020 | 9 | 2020 |
| Efficient modeling of charge trapping at cryogenic temperatures—part II: Experimental J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ... IEEE Transactions on Electron Devices 68 (12), 6372-6378, 2021 | 8 | 2021 |
| Phase stability of the ice XVII-based CO2 chiral hydrate from molecular dynamics simulations J Michl, M Sega, C Dellago The Journal of Chemical Physics 151 (10), 104502, 2019 | 7 | 2019 |
| Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures J Michl, A Grill, D Claes, G Rzepa, B Kaczer, D Linten, I Radu, T Grasser, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 6 | 2020 |
| On the distribution of single defect threshold voltage shifts in SiON transistors K Tselios, D Waldhör, B Stampfer, J Michl, EG Ioannidis, H Enichlmair, ... IEEE Transactions on Device and Materials Reliability 21 (2), 199-206, 2021 | 5 | 2021 |
| A comprehensive cryogenic CMOS variability and reliability assessment using transistor arrays A Grill, J Michl, J Diaz-Fortuny, A Beckers, E Bury, A Chasin, T Grasser, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 4 | 2023 |
| Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors K Tselios, J Michl, T Knobloch, H Enichlmair, EG Ioannidis, R Minixhofer, ... Microelectronics Reliability 138, 114701, 2022 | 3 | 2022 |
| Charge trapping and variability in CMOS technologies at cryogenic temperatures JD Michl Technische Universität Wien, 2022 | 2 | 2022 |
| Distribution of step heights of electron and hole traps in SiON nMOS transistors K Tselios, B Stampfer, J Michl, E Ioannidis, H Enichlmair, M Waltl 2020 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2020 | 2 | 2020 |
| Identifying Defects in Charge Trapping Related Phenomena D Waldhoer, C Schleich, J Michl, T Grasser 2023 International Conference on Numerical Simulation of Optoelectronic …, 2023 | 1 | 2023 |
| Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors K Tselios, T Knobloch, J Michl, D Waldhör, C Schleich, E Ioannidis, ... 2022 IEEE International Integrated Reliability Workshop (IIRW), 1-5, 2022 | 1 | 2022 |
| Phase stability of the ice XVII-based CO J Michl, M Sega, C Dellago | | 2019 |
Michael WaltlFull Professor at TU Wien, Vienna, AustriaPotvrđena adresa e-pošte na iue.tuwien.ac.at
