Thibault Sohier

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Nicola MarzariÉcole Polytechnique Fédérale de Lausanne (EPFL), and Paul Scherrer Institut (PSI)Potvrđena adresa e-pošte na epfl.ch
Marco GibertiniUniversity of Modena and Reggio EmiliaPotvrđena adresa e-pošte na unimore.it
Francesco MauriSapienza Università di RomaPotvrđena adresa e-pošte na uniroma1.it
Matteo CalandraUniversity of Trento, CNRS and Sorbonne UniversitéPotvrđena adresa e-pošte na unitn.it
Davide CampiUniversity of Milano-BicoccaPotvrđena adresa e-pošte na unimib.it
Giovanni PizziLaboratory for Materials Simulations, Paul Scherrer Institute (PSI), Villigen PSI, SwitzerlandPotvrđena adresa e-pošte na psi.ch
Antimo MarrazzoAssistant Professor (RTDb) at SISSAPotvrđena adresa e-pošte na sissa.it
Nicolas MounetPhysicist, CERNPotvrđena adresa e-pošte na cern.ch
Matthieu VerstraeteProfessor of Physics, University of Liege, BelgiumPotvrđena adresa e-pošte na uliege.be
Ivano E. CastelliProfessor, Autonomous Materials Discovery, DTU EnergyPotvrđena adresa e-pošte na dtu.dk
Philippe SchwallerAssistant Professor, Laboratory of Artificial Chemical Intelligence - EPFLPotvrđena adresa e-pošte na epfl.ch
Andrius MerkysResearcher, Vilnius University Institute of BiotechnologyPotvrđena adresa e-pošte na ibt.lt
Andrea CepellottiHarvard University, School of Engineering and Applied SciencesPotvrđena adresa e-pošte na g.harvard.edu
Cheol-Hwan ParkProfessor of Physics, Seoul National UniversityPotvrđena adresa e-pošte na snu.ac.kr
Luca BanszerusFaculty of Physics, University of ViennaPotvrđena adresa e-pošte na univie.ac.at
Christoph StampferRWTH AachenPotvrđena adresa e-pošte na physik.rwth-aachen.de
Alberto MorpurgoUniversity of GenevaPotvrđena adresa e-pošte na unige.ch
Georgy SamsonidzeLead Engineer, Bosch Research and Technology Center North AmericaPotvrđena adresa e-pošte na civet.berkeley.edu
Boris KozinskyHarvard University, Bosch ResearchPotvrđena adresa e-pošte na seas.harvard.edu
Nicolas UbrigMads Clausen Institute, University of Southern DenmarkPotvrđena adresa e-pošte na mci.sdu.dk

Prati

Thibault Sohier

CNRS, Laboratoire Charles Coulomb, Montpellier

Potvrđena adresa e-pošte na umontpellier.fr - Početna stranica

condensed matter ab-initio 2D materials


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds N Mounet, M Gibertini, P Schwaller, D Campi, A Merkys, A Marrazzo, ... Nature nanotechnology 13 (3), 246-252, 2018	1807	2018
Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene T Sohier, M Calandra, F Mauri Physical Review B 96 (7), 075448, 2017	303	2017
Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations T Sohier, M Calandra, F Mauri Physical Review B 94 (8), 085415, 2016	217	2016
Electron–phonon interactions and the intrinsic electrical resistivity of graphene CH Park, N Bonini, T Sohier, G Samsonidze, B Kozinsky, M Calandra, ... Nano letters 14 (3), 1113-1119, 2014	210	2014
Breakdown of optical phonons' splitting in two-dimensional materials T Sohier, M Gibertini, M Calandra, F Mauri, N Marzari Nano Letters 17 (6), 3758-3763, 2017	174	2017
Phonon-limited resistivity of graphene by first-principles calculations: Electron-phonon interactions, strain-induced gauge field, and Boltzmann equation T Sohier, M Calandra, CH Park, N Bonini, N Marzari, F Mauri Physical Review B 90 (12), 125414, 2014	161	2014
Mobility of two-dimensional materials from first principles in an accurate and automated framework T Sohier, D Campi, N Marzari, M Gibertini Physical Review Materials 2 (11), 114010, 2018	152	2018
Enhanced electron-phonon interaction in multivalley materials T Sohier, E Ponomarev, M Gibertini, H Berger, N Marzari, N Ubrig, ... Physical Review X 9 (3), 031019, 2019	115	2019
Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ... ACS nano 15 (7), 11285-11295, 2021	75	2021
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ... arXiv preprint arXiv:1909.09523, 2019	44	2019
Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc Applied Physics Letters 118 (10), 2021	38	2021
Density-functional calculation of static screening in two-dimensional materials: The long-wavelength dielectric function of graphene T Sohier, M Calandra, F Mauri Physical Review B 91 (16), 165428, 2015	34	2015
Valley-engineering mobilities in two-dimensional materials T Sohier, M Gibertini, D Campi, G Pizzi, N Marzari Nano letters 19 (6), 3723-3729, 2019	33	2019
Remote free-carrier screening to boost the mobility of Fröhlich-limited two-dimensional semiconductors T Sohier, M Gibertini, MJ Verstraete Physical Review Materials 5 (2), 024004, 2021	23	2021
Electron-phonon interaction and phonon frequencies in two-dimensional doped semiconductors F Macheda, T Sohier, P Barone, F Mauri Physical Review B 107 (9), 094308, 2023	21	2023
Ultralow-voltage design of graphene PN junction quantum reflective switch transistor T Sohier, B Yu Applied Physics Letters 98 (21), 2011	19	2011
Profiling novel high-conductivity 2D semiconductors T Sohier, M Gibertini, N Marzari 2D Materials 8 (1), 015025, 2020	15	2020
Electrons and phonons in graphene: electron-phonon coupling, screening and transport in the field effect setup T Sohier Université Pierre et Marie Curie-Paris VI, 2015	12	2015
The impact of valley profile on the mobility and Kerr rotation of transition metal dichalcogenides T Sohier, PMMC de Melo, Z Zanolli, MJ Verstraete 2D Materials 10 (2), 025006, 2023	10	2023
Theory of infrared double-resonance Raman spectrum in graphene: The role of the zone-boundary electron-phonon enhancement L Graziotto, F Macheda, T Sohier, M Calandra, F Mauri Physical Review B 109 (7), 075420, 2024	9	2024

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