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| A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ... Advanced Electronic Materials 5 (12), 1900740, 2019 | 220 | 2019 |
| Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 2021 | 151 | 2021 |
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| High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ... Optics express 27 (4), 5798-5813, 2019 | 119 | 2019 |
| Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 Passivation X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ... IEEE Electron Device Letters 34 (3), 339-341, 2013 | 107 | 2013 |
| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics express 25 (14), 15818-15827, 2017 | 105 | 2017 |
| High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ... Optics express 28 (7), 10280-10293, 2020 | 101 | 2020 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 97 | 2020 |
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| Relaxed and strained patterned germanium-tin structures: a Raman scattering study R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo ECS Journal of Solid State Science and Technology 2 (4), P138, 2013 | 96 | 2013 |
| An Electronic Synapse Based on 2D Ferroelectric CuInP2S6 B Li, S Li, H Wang, L Chen, L Liu, X Feng, Y Li, J Chen, X Gong, KW Ang Advanced Electronic Materials 6 (12), 2000760, 2020 | 89 | 2020 |
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| III–V Multiple-Gate Field-Effect Transistors With High-MobilityChannel and Epi-Controlled Retrograde-Doped Fin HC Chin, X Gong, L Wang, HK Lee, L Shi, YC Yeo IEEE Electron Device Letters 32 (2), 146-148, 2010 | 84 | 2010 |
| Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO 2 protective layer for photoelectrochemical water splitting and hydrogen generation S Masudy-Panah, YJK Eugene, ND Khiavi, R Katal, X Gong Journal of Materials Chemistry A 6 (25), 11951-11965, 2018 | 79 | 2018 |
| Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning X Chen, Y Xie, Y Sheng, H Tang, Z Wang, Y Wang, Y Wang, F Liao, J Ma, ... Nature Communications 12 (1), 5953, 2021 | 78 | 2021 |
| Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn) Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ... 2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012 | 73 | 2012 |
| Nanocrystal-engineered thin CuO film photocatalyst for visible-light-driven photocatalytic degradation of organic pollutant in aqueous solution R Katal, S Masudy-panah, EYJ Kong, ND Khiavi, MHDA Farahani, ... Catalysis Today 340, 236-244, 2020 | 72 | 2020 |
| Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity S Samanta, U Chand, S Xu, K Han, Y Wu, C Wang, A Kumar, H Velluri, ... IEEE Electron Device Letters 41 (6), 856-859, 2020 | 69 | 2020 |
Yee-Chia YeoNational University of SingaporePotvrđena adresa e-pošte na nus.edu.sg
