Giuseppe Carlo Tettamanzi

Citirano

	Sve	Od 2020.
Citati	888	219
H-indeks	16	8
i10-indeks	24	6

200920102011201220132014201520162017201820192020202120222023202420253 19 49 59 78 72 68 77 87 71 66 50 50 36 33 46 4

Javni pristup

Prikaži sve

14 članaka

7 članaka

dostupno

nije dostupno

Na temelju uvjeta financiranja

Suautori

Sven RoggeProfessor of Physics, University of New South WalesPotvrđena adresa e-pošte na unsw.edu.au
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityPotvrđena adresa e-pošte na purdue.edu
Andrew DzurakScientia Professor in Electrical Engineering, UNSWPotvrđena adresa e-pošte na unsw.edu.au
Maud VinetQuobly (ex CEA)Potvrđena adresa e-pošte na quobly.io
Rajib RahmanProfessor of Physics, University of New South WalesPotvrđena adresa e-pošte na unsw.edu.au
Ruichen ZhaoIBM QuantumPotvrđena adresa e-pošte na ibm.com
Mikko MöttönenAssociate Professor (tenured) of Quantum Technology, Aalto University and VTTPotvrđena adresa e-pošte na aalto.fi
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaPotvrđena adresa e-pošte na unimib.it
David A. MahnsWestern Sydney UniversityPotvrđena adresa e-pošte na westernsydney.edu.au
Antonio LautoAssociate Professor, University of Western SydneyPotvrđena adresa e-pošte na uws.edu.au
María José CalderónInstituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones CientíficasPotvrđena adresa e-pošte na icmm.csic.es
Damia MawadSchool of Materials Science and Engineering, University of New South WalesPotvrđena adresa e-pošte na unsw.edu.au
Paul BreenBiomedical Engineering & Neuroscience, The MARCS Institute, Western Sydney UnviersityPotvrđena adresa e-pošte na uws.edu.au
Gaetano Gargiulo, Gaetano D. GargiuloResearch Professor, Western Sydney University, "Federico II" The University ofPotvrđena adresa e-pošte na westernsydney.edu.au
Marcus StoodleyMacquarie UniversityPotvrđena adresa e-pošte na mq.edu.au
Ramon Aguado (ORCID: 0000-0002-7...Senior Researcher, Instituto de Ciencia de Materiales de Madrid (ICMM - CSIC). (ROR 02qqy8j09)Potvrđena adresa e-pošte na icmm.csic.es
Belita KoillerInstituto de Física, Universidade Federal do Rio de JaneiroPotvrđena adresa e-pošte na if.ufrj.br
Timothy DutyD-Wave Quantum Inc.Potvrđena adresa e-pošte na dwavesys.com
Vyacheslavs KashcheyevsUniversity of LatviaPotvrđena adresa e-pošte na latnet.lv
Janis TimoshenkoFritz-Haber InstitutePotvrđena adresa e-pošte na fhi-berlin.mpg.de

Prati

Giuseppe Carlo Tettamanzi

giuseppe.tettamanzi@adelaide.edu.au

Potvrđena adresa e-pošte na adelaide.edu.au

Solid State Physics Quantum Transport Mesoscopic Physics Nano-electronics


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
An accurate single-electron pump based on a highly tunable silicon quantum dot A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ... Nano letters 14 (6), 3405-3411, 2014	92	2014
Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012	88	2012
Magnetic-field probing of an SU (4) Kondo resonance in a single-atom transistor GC Tettamanzi, J Verduijn, GP Lansbergen, M Blaauboer, MJ Calderón, ... Physical review letters 108 (4), 046803, 2012	70	2012
Probing the spin states of a single acceptor atom J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ... Nano letters 14 (3), 1492-1496, 2014	56	2014
Tunable Kondo effect in a single donor atom GP Lansbergen, GC Tettamanzi, J Verduijn, N Collaert, S Biesemans, ... Nano letters 10 (2), 455-460, 2010	55	2010
Charge pumping through a single donor atom GC Tettamanzi, R Wacquez, S Rogge New Journal of Physics 16 (6), 063036, 2014	54	2014
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon R Rahman, GP Lansbergen, J Verduijn, GC Tettamanzi, SH Park, ... Physical Review B—Condensed Matter and Materials Physics 84 (11), 115428, 2011	46	2011
Wave function control over a single donor atom J Verduijn, GC Tettamanzi, S Rogge Nano Letters 13 (4), 1476-1480, 2013	44	2013
Heterointerface effects on the charging energy of the shallow ground state in silicon: Role of dielectric mismatch MJ Calderón, J Verduijn, GP Lansbergen, GC Tettamanzi, S Rogge, ... Physical Review B—Condensed Matter and Materials Physics 82 (7), 075317, 2010	43	2010
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ... Applied Physics Letters 96 (26), 2010	39	2010
Lifetime-enhanced transport in silicon due to spin and valley blockade GP Lansbergen, R Rahman, J Verduijn, GC Tettamanzi, N Collaert, ... Physical Review Letters 107 (13), 136602, 2011	37	2011
Superconducting transition in Nb nanowires fabricated using focused ion beam GC Tettamanzi, CI Pakes, A Potenza, S Rubanov, CH Marrows, S Prawer Nanotechnology 20 (46), 465302, 2009	31	2009
Stimulation and repair of peripheral nerves using bioadhesive graft‐antenna A Sliow, Z Ma, G Gargiulo, D Mahns, D Mawad, P Breen, M Stoodley, ... Advanced Science 6 (11), 1801212, 2019	28	2019
Probing the quantum states of a single atom transistor at microwave frequencies GC Tettamanzi, SJ Hile, MG House, M Fuechsle, S Rogge, MY Simmons ACS nano 11 (3), 2444-2451, 2017	28	2017
Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ... 2010 Symposium on VLSI Technology, 193-194, 2010	27	2010
Thermionic emission as a tool to study transport in undoped nFinFETs GC Tettamanzi, A Paul, GP Lansbergen, J Verduijn, S Lee, N Collaert, ... IEEE electron device letters 31 (2), 150-152, 2009	19	2009
Gigahertz single-electron pumping mediated by parasitic states A Rossi, J Klochan, J Timoshenko, FE Hudson, M Möttönen, S Rogge, ... Nano letters 18 (7), 4141-4147, 2018	14	2018
Interface trap density metrology of state-of-the-art undoped Si n-FinFETs GC Tettamanzi, A Paul, S Lee, SR Mehrotra, N Collaert, S Biesemans, ... IEEE Electron Device Letters 32 (4), 440-442, 2011	14	2011
Coherent transport through a double donor system in silicon J Verduijn, GC Tettamanzi, GP Lansbergen, N Collaert, S Biesemans, ... Applied Physics Letters 96 (7), 2010	14	2010
A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures WE Purches, A Rossi, R Zhao, S Kafanov, TL Duty, AS Dzurak, S Rogge, ... Applied Physics Letters 107 (6), 2015	12	2015

Sustav trenutno ne može provesti ovu radnju. Pokušajte ponovo kasnije.

Članci 1–20

Godišnji broj citata

Dvostruki navodi

Spojeni navodi

Dodavanje suautoraSuautori

Prati

Citirano

Suautori