| Leakage current by Frenkel–Poole emission in Ni/Au schottky contacts on Al0. 83In0. 17N/AlN/GaN heterostructures E Arslan, S Bütün, E Ozbay Applied Physics Letters 94 (14), 2009 | 163 | 2009 |
| Buffer optimization for crack-free GaN epitaxial layers grown on Si (1 1 1) substrate by MOCVD E Arslan, MK Ozturk, A Teke, S Ozcelik, E Ozbay Journal of Physics D: Applied Physics 41 (15), 155317, 2008 | 161 | 2008 |
| Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ... Journal of Applied Physics 105 (1), 2009 | 122 | 2009 |
| Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures E Arslan, Ş Altındal, S Özçelik, E Ozbay Journal of Applied Physics 105 (2), 2009 | 120 | 2009 |
| Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures E Arslan, Ş Altındal, S Özçelik, E Ozbay Semiconductor science and technology 24 (7), 075003, 2009 | 102 | 2009 |
| The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates E Arslan, S Bütün, SB Lisesivdin, M Kasap, S Ozcelik, E Ozbay Journal of Applied Physics 103 (10), 2008 | 92 | 2008 |
| Effective mass of electron in monolayer graphene: Electron-phonon interaction E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ... Journal of Applied Physics 113 (4), 2013 | 91 | 2013 |
| Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures E Arslan, Y Şafak, Ş Altındal, Ö Kelekçi, E Özbay Journal of Non-Crystalline Solids 356 (20-22), 1006-1011, 2010 | 81 | 2010 |
| Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures E Arslan, S Bütün, Y Şafak, H Uslu, İ Taşçıoğlu, Ş Altındal, E Özbay Microelectronics Reliability 51 (2), 370-375, 2011 | 53 | 2011 |
| The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate E Arslan, MK Ozturk, Ö Duygulu, AA Kaya, S Ozcelik, E Ozbay Applied Physics A 94, 73-82, 2009 | 44 | 2009 |
| Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis E Arslan, S Bütün, Y Şafak, E Ozbay Journal of electronic materials 39 (12), 2681-2686, 2010 | 38 | 2010 |
| Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures E Arslan, Y Şafak, İ Taşçıoğlu, H Uslu, E Özbay Microelectronic engineering 87 (10), 1997-2001, 2010 | 38 | 2010 |
| Strain analysis of the GaN epitaxial layers grown on nitridated Si (111) substrate by metal organic chemical vapor deposition MK Ozturk, E Arslan, İ Kars, S Ozcelik, E Ozbay Materials science in semiconductor processing 16 (1), 83-88, 2013 | 36 | 2013 |
| Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction E Arslan, Y Badali, M Aalizadeh, Ş Altındal, E Özbay Journal of Physics and Chemistry of Solids 148, 109758, 2021 | 27 | 2021 |
| Thyroid function in hyperemesis gravidarum and correlation with serum leptin levels EÖ Arslan, L Cengiz, M Arslan International Journal of Gynecology & Obstetrics 83 (2), 187-188, 2003 | 27 | 2003 |
| The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si (1 1 1) substrates by MOCVD E Arslan, MK Ozturk, S Ozcelik, E Ozbay Current Applied Physics 9 (2), 472-477, 2009 | 20 | 2009 |
| Indium rich InGaN solar cells grown by MOCVD H Çakmak, E Arslan, M Rudziński, P Demirel, HE Unalan, W Strupiński, ... Journal of Materials Science: Materials in Electronics 25, 3652-3658, 2014 | 18 | 2014 |
| Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate E Arslan, MK Ozturk, H Cakmak, P Demirel, S Özçelik, E Ozbay Journal of Materials Science: Materials in Electronics 24, 4471-4481, 2013 | 18 | 2013 |
| Current transport mechanisms and trap state investigations in (Ni/Au)–AlN/GaN Schottky barrier diodes E Arslan, S Bütün, Y Şafak, H Çakmak, H Yu, E Özbay Microelectronics Reliability 51 (3), 576-580, 2011 | 18 | 2011 |
| The electrical, optical, and structural properties of GaN epitaxial layers grown on Si (111) substrate with SiNx interlayers E Arslan, Ö Duygulu, AA Kaya, A Teke, S Özçelik, E Ozbay Superlattices and Microstructures 46 (6), 846-857, 2009 | 18 | 2009 |
