Mahesh Neupane

Citirano

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Suautori

Roger K. LakeUniversity of California RiversidePotvrđena adresa e-pošte na ece.ucr.edu
Tony IvanovUS Army Research LaboratoryPotvrđena adresa e-pošte na ieee.org
Dmitry RuzmetovU.S. Army CCDC Army Research LaboratoryPotvrđena adresa e-pošte na mail.mil
Darshana WickramaratneNaval Research LaboratoryPotvrđena adresa e-pošte na nrl.navy.mil
Pankaj B ShahUS Army Research LabPotvrđena adresa e-pošte na mail.mil
Oliver MontiUniversity of ArizonaPotvrđena adresa e-pošte na u.arizona.edu
Steve CroninUniversity of Southern CaliforniaPotvrđena adresa e-pošte na usc.edu
Zhen LiUniversity of Southern CaliforniaPotvrđena adresa e-pošte na usc.edu
Michael GrovesAssistant Professor, California State University, FullertonPotvrđena adresa e-pošte na fullerton.edu
Terrance O'ReganElectrical Engineer, DEVCOM Army Research LaboratoryPotvrđena adresa e-pošte na mail.mil
K M Masum HabibIntel Corp.Potvrđena adresa e-pošte na ee.ucr.edu
Ashok MulchandaniDistinguished Professor, University of California RiversidePotvrđena adresa e-pošte na engr.ucr.edu
Edward F C ByrdDEVCOM ARLPotvrđena adresa e-pošte na army.mil
Roland KawakamiProfessor of Physics, The Ohio State UniversityPotvrđena adresa e-pošte na osu.edu
Yunqiu Kelly LuoCornell University, University of Southern CaliforniaPotvrđena adresa e-pošte na usc.edu
Rajib RahmanProfessor of Physics, University of New South WalesPotvrđena adresa e-pošte na unsw.edu.au
Andrew HerzingNational Institute of Standards and TechnologyPotvrđena adresa e-pošte na nist.gov
Mircea CotletBrookhaven National Laboratory, Upton New YorkPotvrđena adresa e-pošte na bnl.gov
Jerzy T. SadowskiCenter for Functional Nanomaterials, Brookhaven National LaboratoryPotvrđena adresa e-pošte na bnl.gov
Pankaj RamnaniUniversity of California, Riverside, Lam ResearchPotvrđena adresa e-pošte na ucr.edu

Prati

Mahesh Neupane

Research Scientist, US Army Research Laboratory

Potvrđena adresa e-pošte na mail.mil

Ultrawide Bandgap Semiconductor 2D Materials 2D/3D Interfaces Emerging materials


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Tin Disulfide An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics Y Huang, E Sutter, JT Sadowski, M Cotlet, OLA Monti, DA Racke, ... ACS nano 8 (10), 10743-10755, 2014	570	2014
Structure, properties and applications of two‐dimensional hexagonal boron nitride S Roy, X Zhang, AB Puthirath, A Meiyazhagan, S Bhattacharyya, ... Advanced Materials 33 (44), 2101589, 2021	498	2021
Opto-Valleytronic Spin Injection in Monolayer MoS₂/Few-Layer Graphene Hybrid Spin Valves YK Luo, J Xu, T Zhu, G Wu, EJ McCormick, W Zhan, MR Neupane, ... Nano letters 17 (6), 3877-3883, 2017	265	2017
Direct Bandgap Transition in Many‐Layer MoS₂ by Plasma‐Induced Layer Decoupling R Dhall, MR Neupane, D Wickramaratne, M Mecklenburg, Z Li, C Moore, ... Advanced Materials 27 (9), 1573-1578, 2015	118	2015
Exciton condensate in bilayer transition metal dichalcogenides: Strong coupling regime B Debnath, Y Barlas, D Wickramaratne, MR Neupane, RK Lake Physical Review B 96 (17), 174504, 2017	69	2017
MoS2-graphene heterostructures as efficient organic compounds sensing 2D materials T Pham, P Ramnani, CC Villarreal, J Lopez, P Das, I Lee, MR Neupane, ... Carbon 142, 504-512, 2019	68	2019
Raman spectra of twisted CVD bilayer graphene P Ramnani, MR Neupane, S Ge, AA Balandin, RK Lake, A Mulchandani Carbon 123, 302-306, 2017	66	2017
Stacking order dependent mechanical properties of graphene/MoS2 bilayer and trilayer heterostructures RM Elder, MR Neupane, TL Chantawansri Applied Physics Letters 107 (7), 2015	58	2015
Commensurate lattice constant dependent thermal conductivity of misoriented bilayer graphene C Li, B Debnath, X Tan, S Su, K Xu, S Ge, MR Neupane, RK Lake Carbon 138, 451-457, 2018	50	2018
Systematic comparison of various oxidation treatments on diamond surface C Li, X Zhang, EF Oliveira, AB Puthirath, MR Neupane, JD Weil, ... Carbon 182, 725-734, 2021	41	2021
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ... Applied Physics Letters 111 (5), 2017	41	2017
Anisotropic attosecond charge carrier dynamics and layer decoupling in quasi-2D layered SnS₂ CN Eads, D Bandak, MR Neupane, D Nordlund, OLA Monti Nature Communications 8 (1), 1369, 2017	37	2017
Diamond Field-Effect Transistors With V₂O₅-Induced Transfer Doping: Scaling to 50-nm Gate Length KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ... IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020	35	2020
The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite KM Habib, SS Sylvia, S Ge, M Neupane, RK Lake Applied Physics Letters 103 (24), 2013	35	2013
A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces T Feng, H Zhou, Z Cheng, LS Larkin, MR Neupane ACS applied materials & interfaces 15 (25), 29655-29673, 2023	32	2023
Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride H Chi, Y Ou, TB Eldred, W Gao, S Kwon, J Murray, M Dreyer, RE Butera, ... Nature Communications 14 (1), 3222, 2023	32	2023
Structural, electronic, and magnetic properties of Y Liu, S Kwon, GJ de Coster, RK Lake, MR Neupane Physical Review Materials 6 (8), 084004, 2022	30	2022
Synthesis of Atomically Thin MoS2 Triangles and Hexagrams and their Electrical Transport Properties R Ionescu, W Wang, Y Chai, Z Mutlu, I Ruiz, Z Favors, D Wickramaratne, ... IEEE Transactions on Nanotechnology, 1-1, 2014	29	2014
Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures PS Mirabedini, B Debnath, MR Neupane, P Alex Greaney, ... Applied Physics Letters 117 (12), 2020	28	2020
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN D Ruzmetov, MR Neupane, A Herzing, TP O’Regan, A Mazzoni, ML Chin, ... 2D Materials 5 (4), 045016, 2018	22	2018

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