| Atomic structure of conducting nanofilaments in TiO2 resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010 | 2430 | 2010 |
| Nanofilamentary resistive switching in binary oxide system; a review on the present statusand outlook KM Kim, DS Jeong, CS Hwang Nanotechnology 22 (25), 254002, 2011 | 767 | 2011 |
| Plant secondary metabolite biosynthesis and transcriptional regulation in response to biotic and abiotic stress conditions R Jan, S Asaf, M Numan, Lubna, KM Kim Agronomy 11 (5), 968, 2021 | 569 | 2021 |
| Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 2007 | 514 | 2007 |
| Memristor applications for programmable analog ICs S Shin, K Kim, SM Kang IEEE Transactions on Nanotechnology 10 (2), 266-274, 2010 | 468 | 2010 |
| Silicon mitigates heavy metal stress by regulating P-type heavy metal ATPases, Oryza sativalow silicon genes, and endogenous phytohormones YH Kim, AL Khan, DH Kim, SY Lee, KM Kim, M Waqas, HY Jung, JH Shin, ... BMC plant biology 14, 1-13, 2014 | 460 | 2014 |
| Memristors for energy‐efficient new computing paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016 | 430 | 2016 |
| An artificial nociceptor based on a diffusive memristor JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ... Nature communications 9 (1), 417, 2018 | 426 | 2018 |
| High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong Applied Physics Letters 85 (18), 4112-4114, 2004 | 414 | 2004 |
| Query and document topic category transition analysis system and method and query expansion-based information retrieval system and method SH Myaeng, YC Jung, KM Kim US Patent 8,452,798, 2013 | 348 | 2013 |
| Physical electro-thermal model of resistive switching in bi-layered resistance-change memory S Kim, SJ Kim, KM Kim, SR Lee, M Chang, E Cho, YB Kim, CJ Kim, ... Scientific reports 3 (1), 1680, 2013 | 306 | 2013 |
| Compact models for memristors based on charge-flux constitutive relationships S Shin, K Kim, SM Kang IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2010 | 275 | 2010 |
| Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films KM Kim, BJ Choi, CS Hwang Applied physics letters 90 (24), 2007 | 271 | 2007 |
| Low-power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high-density crossbar application KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ... Nano letters 16 (11), 6724-6732, 2016 | 241 | 2016 |
| Thermotolerance effect of plant growth-promoting Bacillus cereus SA1 on soybean during heat stress MA Khan, S Asaf, AL Khan, R Jan, SM Kang, KM Kim, IJ Lee BMC microbiology 20, 1-14, 2020 | 240 | 2020 |
| Effects of neuromuscular electrical stimulation after anterior cruciate ligament reconstruction on quadriceps strength, function, and patient-oriented outcomes: a systematic review KM Kim, T Croy, J Hertel, S Saliba journal of orthopaedic & sports physical therapy 40 (7), 383-391, 2010 | 236 | 2010 |
| A detailed understanding of the electronic bipolar resistance switching behavior inPt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 232 | 2011 |
| Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory SR Lee, YB Kim, M Chang, KM Kim, CB Lee, JH Hur, GS Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 71-72, 2012 | 196 | 2012 |
| Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash JH Yoon, KM Kim, SJ Song, JY Seok, KJ Yoon, DE Kwon, TH Park, ... Advanced Materials 27 (25), 3811-3816, 2015 | 195 | 2015 |
| Nociceptive memristor Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ... Advanced Materials 30 (8), 1704320, 2018 | 189 | 2018 |
