| β-Ga2O3 growth by plasma-assisted molecular beam epitaxy MY Tsai, O Bierwagen, ME White, JS Speck Journal of Vacuum Science & Technology A 28 (2), 354-359, 2010 | 153 | 2010 |
| Spin injection from (Ga, Mn) As into InAs quantum dots Y Chye, ME White, E Johnston-Halperin, BD Gerardot, DD Awschalom, ... Physical Review B 66 (20), 201301, 2002 | 111 | 2002 |
| Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy ME White, O Bierwagen, MY Tsai, JS Speck Journal of Applied Physics 106 (9), 2009 | 108 | 2009 |
| Valence-band density of states and surface electron accumulation in epitaxial films SK Vasheghani Farahani, TD Veal, JJ Mudd, DO Scanlon, GW Watson, ... Physical Review B 90 (15), 155413, 2014 | 100 | 2014 |
| Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire ME White, MY Tsai, F Wu, JS Speck Journal of Vacuum Science & Technology A 26 (5), 1300-1307, 2008 | 83 | 2008 |
| Plasma-assisted molecular beam epitaxy of high quality In2O3 (001) thin films on Y-stabilized ZrO2 (001) using In as an auto surfactant O Bierwagen, ME White, MY Tsai, JS Speck Applied Physics Letters 95 (26), 2009 | 69 | 2009 |
| Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films T Nagata, O Bierwagen, ME White, MY Tsai, JS Speck Journal of Applied Physics 107 (3), 2010 | 67 | 2010 |
| Properties of a Fe/GaAs (001) hybrid structure grown by molecular-beam epitaxy Y Chye, V Huard, ME White, PM Petroff Applied physics letters 80 (3), 449-451, 2002 | 60 | 2002 |
| Plasma-assisted molecular beam epitaxy of SnO2 on TiO2 MY Tsai, ME White, JS Speck Journal of crystal growth 310 (18), 4256-4261, 2008 | 55 | 2008 |
| XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films T Nagata, O Bierwagen, ME White, MY Tsai, Y Yamashita, H Yoshikawa, ... Applied Physics Letters 98 (23), 2011 | 48 | 2011 |
| Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of -doped F Borgatti, JA Berger, D Céolin, JS Zhou, JJ Kas, M Guzzo, CF McConville, ... Physical Review B 97 (15), 155102, 2018 | 46 | 2018 |
| Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry M Feneberg, C Lidig, K Lange, ME White, MY Tsai, JS Speck, ... physica status solidi (a) 211 (1), 82-86, 2014 | 43 | 2014 |
| Investigation of (110) SnO2 growth mechanisms on TiO2 substrates by plasma-assisted molecular beam epitaxy MY Tsai, ME White, JS Speck Journal of Applied Physics 106 (2), 2009 | 42 | 2009 |
| Non-alloyed Schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films O Bierwagen, ME White, MY Tsai, T Nagata, JS Speck Applied physics express 2 (10), 106502, 2009 | 38 | 2009 |
| Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface O Bierwagen, T Nagata, ME White, MY Tsai, JS Speck Journal of Materials Research 27, 2232-2236, 2012 | 35 | 2012 |
| Synthesis and characterization of highly resistive epitaxial indium-doped SnO2 ME White, O Bierwagen, MY Tsai, JS Speck Applied physics express 3 (5), 051101, 2010 | 34 | 2010 |
| Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV M Feneberg, C Lidig, K Lange, R Goldhahn, MD Neumann, N Esser, ... Applied Physics Letters 104 (23), 2014 | 27 | 2014 |
| Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO on sapphire SK Vasheghani Farahani, TD Veal, AM Sánchez, O Bierwagen, ME White, ... Physical Review B—Condensed Matter and Materials Physics 86 (24), 245315, 2012 | 27 | 2012 |
| Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift M Feneberg, C Lidig, ME White, MY Tsai, JS Speck, O Bierwagen, ... APL Materials 7 (2), 2019 | 20 | 2019 |
| Hall and seebeck measurements estimate the thickness of a (buried) carrier system: identifying interface electrons in in-doped SnO2 films A Papadogianni, ME White, JS Speck, Z Galazka, O Bierwagen Applied Physics Letters 107 (25), 2015 | 12 | 2015 |
Jim SpeckProfessor of Materials, UCSBPotvrđena adresa e-pošte na ucsb.edu
