| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1244 | 2018 |
| Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V) JJ Freedsman, T Egawa, Y Yamaoka, Y Yano, A Ubukata, T Tabuchi, ... Applied Physics Express 7 (4), 041003, 2014 | 105 | 2014 |
| High Drain Current Density E-Mode/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit JJ Freedsman, T Kubo, T Egawa IEEE transactions on electron devices 60 (10), 3079-3083, 2013 | 77 | 2013 |
| Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance … JJ Freedsman, T Kubo, T Egawa Applied Physics Letters 99 (3), 2011 | 63 | 2011 |
| Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si JJ Freedsman, A Watanabe, Y Yamaoka, T Kubo, T Egawa physica status solidi (a) 213 (2), 424-428, 2016 | 55 | 2016 |
| Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors T Kubo, JJ Freedsman, YIT Egawa Semiconductor Science and Technology, 2014 | 50 | 2014 |
| Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition S Mase, Y Urayama, T Hamada, JJ Freedsman, T Egawa Applied Physics Express 9 (11), 111005, 2016 | 45 | 2016 |
| Effect of drift layer on the breakdown voltage of fully-vertical GaN-on-Si pn diodes S Mase, T Hamada, JJ Freedsman, T Egawa IEEE Electron Device Letters 38 (12), 1720-1723, 2017 | 37 | 2017 |
| Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route JJ Freedsman, LJ Kennedy, RT Kumar, G Sekaran, JJ Vijaya Materials Research Bulletin 45 (10), 1481-1486, 2010 | 32 | 2010 |
| Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron … JJ Freedsman, T Kubo, SL Selvaraj, T Egawa Japanese journal of applied physics 50 (4S), 04DF03, 2011 | 25 | 2011 |
| Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice A Watanabe, JJ Freedsman, R Oda, T Ito, T Egawa Applied Physics Express 7 (4), 041002, 2014 | 23 | 2014 |
| Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers JJ Freedsman, T Kubo, T Egawa Applied Physics Letters 101 (1), 2012 | 23 | 2012 |
| Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage JJ Freedsman, T Hamada, M Miyoshi, T Egawa IEEE Electron Device Letters 38 (4), 497-500, 2017 | 22 | 2017 |
| Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate JJ Freedsman, A Watanabe, Y Urayama, T Egawa Applied Physics letters 107 (10), 103506, 2015 | 19 | 2015 |
| Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field … JJ Freedsman, T Kubo, T Egawa AIP advances 2 (2), 2012 | 18 | 2012 |
| Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors M Miyoshi, T Tsutsumi, G Nishino, Y Miyachi, M Okada, JJ Freedsman, ... Journal of Vacuum Science & Technology B 34 (5), 2016 | 17 | 2016 |
| Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon JJ Freedsman, A Watanabe, T Ito, T Egawa Applied Physics Express 7 (10), 104101, 2014 | 17 | 2014 |
| Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition A Watanabe, JJ Freedsman, Y Urayama, T Egawa Journal of Applied Physics 118 (23), 235705, 2015 | 11 | 2015 |
| Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility … T Kubo, JJ Freedsman, Y Yoshida, T Egawa Japanese Journal of Applied Physics 54 (2), 020301, 2015 | 10 | 2015 |
| Enhancement of breakdown voltage for fully-vertical GaN-on-Si pn diode by using strained layer superlattice as drift layer S Mase, T Hamada, JJ Freedsman, T Egawa Semiconductor Science and Technology 33 (6), 065017, 2018 | 5 | 2018 |
yasukazu yoshidaNational Institute of Advanced Industrial Science and Technology (AIST)Potvrđena adresa e-pošte na aist.go.jp