Plamen P. Paskov

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Tania PaskovaECE Dept. NCSUPotvrđena adresa e-pošte na ncsu.edu
Vanya DarakchievaLinkoping UniversityPotvrđena adresa e-pošte na ifm.liu.se
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)Potvrđena adresa e-pošte na nuee.nagoya-u.ac.jp
Galia PozinaLinköping UniversityPotvrđena adresa e-pošte na ifm.liu.se
Evgenia ValchevaProfessor, Sofia UniversityPotvrđena adresa e-pošte na phys.uni-sofia.bg
Motoaki IwayaMeijo UniversityPotvrđena adresa e-pošte na meijo-u.ac.jp
Satoshi KamiyamaMeijo UniversityPotvrđena adresa e-pošte na meijo-u.ac.jp
Carl HemmingssonLinköping university, IFMPotvrđena adresa e-pošte na ifm.liu.se
Per O.Å. PerssonLinköping UniversityPotvrđena adresa e-pošte na liu.se
Paul FiniRaytheon Vision SystemsPotvrđena adresa e-pošte na raytheon.com
Dr. Jorge M. GarcíaInstituto de Micro y Nanotecnología-CNM, CSICPotvrđena adresa e-pošte na csic.es
Winston V. SchoenfeldPotvrđena adresa e-pošte na creol.ucf.edu
Tatiana V. ShubinaChief researcher, Ioffe Institute of RASPotvrđena adresa e-pošte na beam.ioffe.ru
John MuthNorth Carolina State UniversityPotvrđena adresa e-pošte na ncsu.edu
Tadas MalinauskasVilnius University, Institute of Photonics and NanotechnologyPotvrđena adresa e-pošte na ff.vu.lt
Jim SpeckProfessor of Materials, UCSBPotvrđena adresa e-pošte na ucsb.edu
Ewa GoldysProfessor, Deputy Director, Australian Research Council Centre of Excellence for NanoscalePotvrđena adresa e-pošte na unsw.edu.au
Ulf SödervallAssistant Professor, Chalmers University of Technology, Gothenburg, SwedenPotvrđena adresa e-pošte na chalmers.se
Filip TuomistoProfessor, University of HelsinkiPotvrđena adresa e-pošte na helsinki.fi
Edward PrebleRTI InternationalPotvrđena adresa e-pošte na rti.org

Prati

Plamen P. Paskov

Linkoping University, Sweden and ECE NCSU, USA

Potvrđena adresa e-pošte na liu.se


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition PP Paskov, R Schifano, B Monemar, T Paskova, S Figge, D Hommel Journal of Applied Physics 98 (9), 2005	256	2005
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ... Physical Review B 69 (11), 115216, 2004	235	2004
Evidence for two Mg related acceptors in GaN BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Physical review letters 102 (23), 235501, 2009	153	2009
Recombination of free and bound excitons in GaN B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina, ... physica status solidi (b) 245 (9), 1723-1740, 2008	147	2008
Optical properties of InN—the bandgap question B Monemar, PP Paskov, A Kasic Superlattices and Microstructures 38 (1), 38-56, 2005	142	2005
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots PP Paskov, PO Holtz, B Monemar, JM Garcia, WV Schoenfeld, PM Petroff Applied Physics Letters 77 (6), 812-814, 2000	126	2000
Anisotropic strain and phonon deformation potentials in GaN V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ... Physical Review B—Condensed Matter and Materials Physics 75 (19), 195217, 2007	124	2007
Refractive indices of InSb, InAs, GaSb, InAsSb, and InGaSb: Effects of free carriers PP Paskov Journal of applied physics 81 (4), 1890-1898, 1997	104	1997
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants M Slomski, N Blumenschein, PP Paskov, JF Muth, T Paskova Journal of Applied Physics 121 (23), 2017	103	2017
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates C Roder, S Einfeldt, S Figge, T Paskova, D Hommel, PP Paskov, ... Journal of applied physics 100 (10), 2006	87	2006
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ... Journal of crystal growth 281 (1), 55-61, 2005	76	2005
Polarized photoluminescence study of free and bound excitons in free-standing PP Paskov, T Paskova, PO Holtz, B Monemar Physical Review B—Condensed Matter and Materials Physics 70 (3), 035210, 2004	62	2004
Properties of the main Mg-related acceptors in GaN from optical and structural studies B Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Journal of Applied Physics 115 (5), 2014	61	2014
Deformation potentials of the and modes of InN V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ... Applied physics letters 84 (18), 3636-3638, 2004	59	2004
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures–theory and experiment PP Paskov, M Slomski, JH Leach, JF Muth, T Paskova AIP advances 7 (9), 2017	53	2017
Phonon mode behavior in strained wurtzite superlattices V Darakchieva, E Valcheva, PP Paskov, M Schubert, T Paskova, ... Physical Review B—Condensed Matter and Materials Physics 71 (11), 115329, 2005	53	2005
Transient photoluminescence of shallow donor bound excitons in GaN B Monemar, PP Paskov, JP Bergman, G Pozina, AA Toropov, TV Shubina, ... Physical Review B—Condensed Matter and Materials Physics 82 (23), 235202, 2010	52	2010
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy V Darakchieva, PP Paskov, T Paskova, E Valcheva, B Monemar, ... Applied physics letters 82 (5), 703-705, 2003	52	2003
Recent developments in the III‐nitride materials B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina physica status solidi (b) 244 (6), 1759-1768, 2007	48	2007
Spin-exchange splitting of excitons in GaN PP Paskov, T Paskova, PO Holtz, B Monemar Physical Review B 64 (11), 115201, 2001	48	2001

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