Michael Shur

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Remis GaskaUVTON, Inc.Potvrđena adresa e-pošte na uvton.com
Grigory SiminUniversity of South CarolinaPotvrđena adresa e-pošte na engr.sc.edu
Max ShatalovCVD Equipment CorporationPotvrđena adresa e-pošte na cvdequipment.com
Taiichi OtsujiRIEC, Tohoku UniversityPotvrđena adresa e-pošte na riec.tohoku.ac.jp
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDPotvrđena adresa e-pošte na unipress.waw.pl
Maxim RyzhiiS. Associate Professor, University of AizuPotvrđena adresa e-pošte na u-aizu.ac.jp
Nezih PalaElectrical & Computer Engineering, Florida International UniversityPotvrđena adresa e-pošte na fiu.edu
Vladimir MitinSUNY Distinguished Professor, University at BuffaloPotvrđena adresa e-pošte na buffalo.edu
Kwyro LeeProfessor of Electrical Engineering, KAISTPotvrđena adresa e-pošte na kaist.ac.kr
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLAPotvrđena adresa e-pošte na seas.ucla.edu
Vyacheslav PopovKotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)Potvrđena adresa e-pošte na soire.renet.ru
Dmitry VekslerHRL LaboratoryPotvrđena adresa e-pošte na hrl.com
Qhalid FareedTexas InstrumentsPotvrđena adresa e-pošte na ti.com
M.I. DyakonovLaboratoire Charles Coulomb (L2C), Université Montpellier -CNRSPotvrđena adresa e-pošte na umontpellier.fr
Guanxiong LiuUniversity of California RiversidePotvrđena adresa e-pošte na ee.ucr.edu
Juras MickeviciusVilnius UniversityPotvrđena adresa e-pošte na ff.vu.lt
Frédéric TeppeDirector of research - CNRS - Laboratoire Charles CoulombPotvrđena adresa e-pošte na umontpellier.fr
Mikhail GaevskiCVD Equipment CorporationPotvrđena adresa e-pošte na CVDEquipment.com
Hadis MorkoçVirginia Commonwealth UniversityPotvrđena adresa e-pošte na vcu.edu
Irina KhmyrovaUniversity of AizuPotvrđena adresa e-pošte na u-aizu.ac.jp

Prati

Michael Shur

Patricia W. and C. Sheldon Roberts Professor, Rensselaer Polytechnic

Potvrđena adresa e-pošte na rpi.edu - Početna stranica

semiconductors


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe ME Levinshtein, SL Rumyantsev, MS Shur John Wiley & Sons, 2001	2189	2001
Handbook series on semiconductor parameters M Levinshtein World scientific, 1997	2052	1997
Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current M Dyakonov, M Shur Physical review letters 71 (15), 2465, 1993	1502	1993
Physics of semiconductor devices M Shur, J Singh Physics Today 43 (10), 98-99, 1990	1348	1990
Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid M Dyakonov, M Shur IEEE transactions on electron devices 43 (3), 380-387, 2002	1307	2002
GaAs devices and circuits MS Shur Springer Science & Business Media, 2013	1052	2013
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	996	2002
Threshold switching in chalcogenide‐glass thin films D Adler, MS Shur, M Silver, SR Ovshinsky Journal of Applied Physics 51 (6), 3289-3309, 1980	835	1980
Transient electron transport in wurtzite GaN, InN, and AlN BE Foutz, SK O’Leary, MS Shur, LF Eastman Journal of applied physics 85 (11), 7727-7734, 1999	722	1999
Sensitive skin V Lumelsky, MS Shur, S Wagner, M Ding World Scientific, 2000	691	2000
Solid-state lighting: toward superior illumination MS Shur, R Zukauskas Proceedings of the IEEE 93 (10), 1691-1703, 2005	645	2005
Physics of amorphous silicon based alloy field‐effect transistors M Shur, M Hack Journal of Applied Physics 55 (10), 3831-3842, 1984	601	1984
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond Proceedings of the IEEE 79 (5), 677-701, 1991	593	1991
An experimental study of contact effects in organic thin film transistors DJ Gundlach, L Zhou, JA Nichols, TN Jackson, PV Necliudov, MS Shur Journal of Applied Physics 100 (2), 2006	571	2006
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	539	2012
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur Applied Physics Letters 65 (9), 1121-1123, 1994	537	1994
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid MI Dyakonov, MS Shur IEEE Transactions on Electron Devices 43 (10), 1640-1645, 1996	532	1996
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	506	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	489	2000
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN UV Bhapkar, MS Shur Journal of Applied Physics 82 (4), 1649-1655, 1997	475	1997

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