Jean Paul Salvestrini

Citirano

	Sve	Od 2020.
Citati	2629	1461
H-indeks	29	19
i10-indeks	68	45

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Suautori

OugazzadenGeorgia Institute of TechnologyPotvrđena adresa e-pošte na georgiatech-metz.fr
Suresh SundaramAssociate Professor, Georgia Tech EuropePotvrđena adresa e-pošte na georgiatech-metz.fr
Gilles PatriarcheCentre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris Sud, Université ParisPotvrđena adresa e-pošte na c2n.upsaclay.fr
ALI AHAITOUFProfesseur de l'enseignement supérieurPotvrđena adresa e-pošte na usmba.ac.ma
Renaud Puybaret, PhDIMEC, R&D EngineerPotvrđena adresa e-pošte na imec.be
Konstantinos PantzasResearch Scientist, CNRS Center for Nanostructures and NanosciencesPotvrđena adresa e-pošte na c2n.upsaclay.fr
Saiful AlamIQE PlcPotvrđena adresa e-pošte na iqep.com
Soltani AliAssociate professorPotvrđena adresa e-pošte na univ-lille.fr
patrice BoursonLMOPS Université de LorrainePotvrđena adresa e-pošte na univ-lorraine.fr
Badreddine ASSOUARDirector of Research @ CNRS, Université de Lorraine | EurASc FellowPotvrđena adresa e-pošte na univ-lorraine.fr
Claire BergerCNRS-UMI2958 and Georgia Tech-PhysicsPotvrđena adresa e-pošte na gatech.edu
Walt A de HeerRegents Professor of Physics, Georgia Institute of Technology and TICNN, Tianjin University, TianjinPotvrđena adresa e-pošte na physics.gatech.edu
BoulangerUniversité Grenoble AlpesPotvrđena adresa e-pošte na neel.cnrs.fr
Andrei SirenkoDepartment of Physics, New Jersey Institute of TechnologyPotvrđena adresa e-pošte na njit.edu
Ariete RighiDepartamento de Física, ICEx, UFMGPotvrđena adresa e-pošte na fisica.ufmg.br
Mohamed HeniniProfessor of Applied Physics, School of Physics and Astronomy, University of NottinghamPotvrđena adresa e-pošte na nottingham.ac.uk
Gael SebaldUniversité de Lyon, INSA Lyon; CNRSPotvrđena adresa e-pošte na insa-lyon.fr
Krystian RolederUniwersytet ŚląskiPotvrđena adresa e-pošte na us.edu.pl

Prati

Jean Paul Salvestrini

Georgia Tech Europe

Potvrđena adresa e-pošte na georgiatech-metz.fr

III-N material and device physics


Naslov Poredaj po navodima Poredaj po godini Poredaj po naslovu	Citirano Citirano	Godina
Analysis and Control of the DC Drift in LiNbO-Based Mach–Zehnder Modulators JP Salvestrini, L Guilbert, M Fontana, M Abarkan, S Gille Journal of lightwave technology 29 (10), 1522-1534, 2011	234	2011
Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy X Li, S Sundaram, Y El Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ... Crystal Growth & Design 16 (6), 3409-3415, 2016	138	2016
Bandgap energy bowing parameter of strained and relaxed InGaN layers G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ... Optical Materials Express 4 (5), 1030-1041, 2014	128	2014
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN T Ayari, S Sundaram, X Li, Y El Gmili, PL Voss, JP Salvestrini, ... Applied Physics Letters 108 (17), 2016	91	2016
Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ... Sensors 16 (3), 273, 2016	86	2016
Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals M Abarkan, JP Salvestrini, MD Fontana, M Aillerie Applied Physics B 76, 765-769, 2003	72	2003
Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ... Scientific reports 7 (1), 15212, 2017	69	2017
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ... Applied Physics Letters 100 (5), 2012	68	2012
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ... Acta Materialia 61 (17), 6587-6596, 2013	61	2013
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ... Scientific reports 7 (1), 786, 2017	55	2017
Experimental Study and Device Design of NO, NO₂, and NH₃ Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, Y El Gmili, ... IEEE Sensors Journal 16 (18), 6828-6838, 2016	51	2016
BAlN thin layers for deep UV applications X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ... physica status solidi (a) 212 (4), 745-750, 2015	51	2015
MOVPE grown periodic AlN/BAlN heterostructure with high boron content X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ... Journal of Crystal Growth 414, 119-122, 2015	50	2015
Optical characterizations of YCa4O (BO3) 3 and Nd: YCa4O (BO3) 3 crystals P Segonds, B Boulanger, B Ménaert, J Zaccaro, JP Salvestrini, ... Optical Materials 29 (8), 975-982, 2007	47	2007
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ... Optical Materials Express 5 (2), 380-392, 2015	46	2015
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ... Applied Physics Letters 99 (22), 2011	46	2011
Electric-field frequency dependence of Pockels coefficients in 2-amino-5-nitropyridium dihydrogen phosphate organic–inorganic crystals J Zaccaro, JP Salvestrini, A Ibanez, P Ney, MD Fontana Journal of the Optical Society of America B 17 (3), 427-432, 2000	46	2000
Interface state effects in GaN Schottky diodes A Ahaitouf, H Srour, SOS Hamady, N Fressengeas, A Ougazzaden, ... Thin Solid Films 522, 345-351, 2012	44	2012
Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery CE Munson, Q Gaimard, K Merghem, S Sundaram, DJ Rogers, ... Journal of Physics D: Applied Physics 51 (3), 035101, 2017	43	2017
Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors C Bishop, JP Salvestrini, Y Halfaya, S Sundaram, Y El Gmili, L Pradere, ... Applied Physics Letters 106 (24), 2015	39	2015

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