GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 2008
236 2008 Quantum Hall resistance standard in graphene devices under relaxed experimental conditions R Ribeiro-Palau, F Lafont, J Brun-Picard, D Kazazis, A Michon, F Cheynis, ...
Nature nanotechnology 10 (11), 965-971, 2015
197 2015 Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F Lafont, R Ribeiro-Palau, D Kazazis, A Michon, O Couturaud, C Consejo, ...
Nature Communications 6 (1), 6806, 2015
110 2015 Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A Michon, S Vézian, A Ouerghi, M Zielinski, T Chassagne, M Portail
Applied Physics Letters 97 (17), 2010
98 2010 Effects of pressure, temperature, and hydrogen during graphene growth on SiC (0001) using propane-hydrogen chemical vapor deposition A Michon, S Vézian, E Roudon, D Lefebvre, M Zielinski, T Chassagne, ...
Journal of Applied Physics 113 (20), 2013
61 2013 Sharp interface in epitaxial graphene layers on 3 A Ouerghi, M Ridene, A Balan, R Belkhou, A Barbier, N Gogneau, ...
Physical Review B—Condensed Matter and Materials Physics 83 (20), 205429, 2011
57 2011 Remote epitaxy using graphene enables growth of stress-free GaN T Journot, H Okuno, N Mollard, A Michon, R Dagher, P Gergaud, J Dijon, ...
Nanotechnology 30 (50), 505603, 2019
56 2019 Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M Nemoz, R Dagher, S Matta, A Michon, P Vennéguès, J Brault
Journal of Crystal Growth 461, 10-15, 2017
55 2017 Graphene integration with nitride semiconductors for high power and high frequency electronics F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, B Pecz, ...
physica status solidi (a) 214 (4), 1600460, 2017
51 2017 High-performance graphene/AlGaN/GaN schottky junctions for hot electron transistors F Giannazzo, G Greco, E Schilirò, R Lo Nigro, I Deretzis, A La Magna, ...
ACS Applied Electronic Materials 1 (11), 2342-2354, 2019
43 2019 Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC M Portail, A Michon, S Vézian, D Lefebvre, S Chenot, E Roudon, ...
Journal of crystal growth 349 (1), 27-35, 2012
43 2012 InAs∕ InP (001) quantum dots emitting at 1.55 μm grown by low-pressure metalorganic vapor-phase epitaxy A Michon, G Saint-Girons, G Beaudoin, I Sagnes, L Largeau, G Patriarche
Applied Physics Letters 87 (25), 2005
40 2005 Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing B Jabakhanji, A Michon, C Consejo, W Desrat, M Portail, A Tiberj, ...
Physical Review B 89 (8), 085422, 2014
39 2014 Single InAs D Elvira, R Hostein, B Fain, L Monniello, A Michon, G Beaudoin, R Braive, ...
Physical Review B—Condensed Matter and Materials Physics 84 (19), 195302, 2011
39 2011 Time-resolved characterization of InAsP∕ InP quantum dots emitting in the C-band telecommunication window R Hostein, A Michon, G Beaudoin, N Gogneau, G Patriache, JY Marzin, ...
Applied physics letters 93 (7), 2008
34 2008 Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near-and mid-IR M Devautour, A Michon, G Beaudoin, I Sagnes, L Cerutti, A Garnache
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1701108-1701108, 2013
33 2013 Metal organic vapor phase epitaxy of InAsP/InP (001) quantum dots for 1.55 μm applications: Growth, structural, and optical properties A Michon, R Hostein, G Patriarche, N Gogneau, G Beaudoin, A Beveratos, ...
Journal of Applied Physics 104 (4), 2008
30 2008 Noise properties of NIR and MIR VECSELs M Myara, M Sellahi, A Laurain, A Michon, I Sagnes, A Garnache
Vertical External Cavity Surface Emitting Lasers (VECSELs) III 8606, 156-168, 2013
28 2013 Magnetoresistance of disordered graphene: From low to high temperatures B Jabakhanji, D Kazazis, W Desrat, A Michon, M Portail, B Jouault
Physical Review B 90 (3), 035423, 2014
26 2014 Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon M Zielinski, JF Michaud, S Jiao, T Chassagne, AE Bazin, A Michon, ...
Journal of Applied Physics 111 (5), 2012
26 2012 
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