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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire VN Jmerik, AM Mizerov, AA Sitnikova, PS Kop’ev, SV Ivanov, EV Lutsenko, ... Applied Physics Letters 96 (14), 2010 | 75 | 2010 |
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev, AV Sakharov, ... Journal of crystal growth 311 (7), 2080-2083, 2009 | 48 | 2009 |
Luminescence and stimulated emission from GaN on silicon substrates heterostructures GP Yablonskii, EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AL Gurskii, ... physica status solidi (a) 192 (1), 54-59, 2002 | 47 | 2002 |
Crystal growth and properties of LiAlO2 and nonpolar GaN on LiAlO2 substrate M Chou, DR Hang, H Kalisch, RH Jansen, Y Dikme, M Heuken, ... Journal of applied physics 101 (10), 2007 | 43 | 2007 |
Photoluminescence of CaxBa1− xGa2S4: Eu2+ solid solutions in wide excitation intensity and temperature intervals MS Leanenia, EV Lutsenko, MV Rzheutski, VN Pavlovskii, GP Yablonskii, ... Journal of Luminescence 181, 121-127, 2017 | 39 | 2017 |
High photoluminescence stability of CaGa4O7: Eu3+ red phosphor in wide excitation intensity interval MS Leanenia, EV Lutsenko, MV Rzheutski, GP Yablonskii, TG Naghiyev, ... Optical Materials 54, 45-49, 2016 | 38 | 2016 |
Recombination dynamics and lasing in ZnO∕ ZnMgO single quantum well structures TV Shubina, AA Toropov, OG Lublinskaya, PS Kop’ev, SV Ivanov, ... Applied Physics Letters 91 (20), 2007 | 38 | 2007 |
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Luminescence of Ca0.5Ba0.5Ga2S4 crystals activated by Eu2+ and Er3+ ions BG Tagiev, OB Tagiev, TG Nagiev, SG Asadullaeva, MS Leonenya, ... Optics and Spectroscopy 118, 389-392, 2015 | 31 | 2015 |
Photoluminescence of Ca x Ba1–x Ga2S4 Solid Solutions Activated by Eu2+ Ions MS Leanenia, EV Lutsenko, NV Rzheutskij, VN Pavlovskii, GP Yablonskii, ... Journal of Applied Spectroscopy 82, 248-253, 2015 | 29 | 2015 |
Dependence of InN properties on MOCVD growth parameters Ö Tuna, H Behmenburg, C Giesen, H Kalisch, RH Jansen, GP Yablonskii, ... physica status solidi c 8 (7‐8), 2044-2046, 2011 | 27 | 2011 |
Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm GP Yablonskii, EV Lutsenko, VN Pavlovskii, IP Marko, AL Gurskii, ... Applied Physics Letters 79 (13), 1953-1955, 2001 | 27 | 2001 |
Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux-and temperature-modulated techniques VN Jmerik, DV Nechaev, S Rouvimov, VV Ratnikov, PS Kop'ev, ... Journal of Materials Research 30 (19), 2871-2880, 2015 | 26 | 2015 |
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Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range MS Leanenia, EV Lutsenko, MV Rzheutski, GP Yablonskii, TG Naghiyev, ... Journal of Applied Physics 129 (24), 2021 | 24 | 2021 |
Lasing in Cd (Zn) Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers IV Sedova, SV Sorokin, AA Toropov, VA Kaigorodov, SV Ivanov, ... Semiconductors 38, 1099-1104, 2004 | 24 | 2004 |
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Growth, Stimulated Emission, Photo‐and Electroluminescence of InGaN/GaN EL‐Test Heterostructures EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AI Stognij, AL Gurskii, ... physica status solidi (c), 272-275, 2003 | 21 | 2003 |
Luminescence and lasing in ZnSe micropowders at high optical excitation levels MS Leanenya, EV Lutsenko, VN Pavlovskii, GP Yablonskii, TG Nagiev, ... Journal of Applied Spectroscopy 82, 53-57, 2015 | 20 | 2015 |