| Breaking the speed limits of phase-change memory D Loke, TH Lee, WJ Wang, LP Shi, R Zhao, YC Yeo, TC Chong, SR Elliott Science 336 (6088), 1566-1569, 2012 | 892 | 2012 |
| Strained nanowire CMOS device and method of forming CY Peng, HL Chiang, YL Yang, CC Yeh, YC Yeo, CW Liu US Patent 9,853,101, 2017 | 572 | 2017 |
| Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology YC Yeo, TJ King, C Hu Journal of applied physics 92 (12), 7266-7271, 2002 | 565 | 2002 |
| Immersion fluid for immersion lithography, and method of performing immersion lithography YC Yeo, BJ Lin, C Hu US Patent 7,700,267, 2010 | 537 | 2010 |
| Lithography apparatus for manufacture of integrated circuits YC Yeo, C Hu US Patent 7,579,135, 2009 | 500 | 2009 |
| 5nm-gate nanowire FinFET FL Yang, DH Lee, HY Chen, CY Chang, SD Liu, CC Huang, TX Chung, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 196-197, 2004 | 450 | 2004 |
| Method and system for immersion lithography CH Lin, YC Yeo US Patent App. 10/748,076, 2005 | 445 | 2005 |
| Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors YC Yeo, HY Chen, CC Huang, WC Lee, FL Yang, C Hu US Patent 6,867,433, 2005 | 427 | 2005 |
| Electronic band structures and effective-mass parameters of wurtzite GaN and InN YC Yeo, TC Chong, MF Li Journal of applied physics 83 (3), 1429-1436, 1998 | 391 | 1998 |
| 25 nm CMOS omega FETs FL Yang, HY Chen, FC Chen, CC Huang, CY Chang, HK Chiu, CC Lee, ... Digest. International Electron Devices Meeting,, 255-258, 2002 | 369 | 2002 |
| MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations YC Yeo, TJ King, C Hu IEEE Transactions on Electron Devices 50 (4), 1027-1035, 2003 | 308 | 2003 |
| Electronic band structure and effective mass parameters of Ge1-xSnx alloys K Lu Low, Y Yang, G Han, W Fan, YC Yeo Journal of Applied Physics 112 (10), 103715, 2012 | 307 | 2012 |
| Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit CH Ko, WC Lee, YC Yeo, CC Lin, C Hu US Patent 7,112,495, 2006 | 287 | 2006 |
| Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric YC Yeo, Q Lu, WC Lee, TJ King, C Hu, X Wang, X Guo, TP Ma IEEE Electron Device Letters 21 (11), 540-542, 2000 | 268 | 2000 |
| Direct tunneling leakage current and scalability of alternative gate dielectrics YC Yeo, TJ King, C Hu Applied Physics Letters 81 (11), 2091-2093, 2002 | 266 | 2002 |
| Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ... 2007 IEEE Symposium on VLSI Technology, 108-109, 2007 | 259 | 2007 |
| Semiconductor nano-rod devices HY Chen, YC Yeo, FL Yang, C Hu US Patent 6,855,606, 2005 | 259 | 2005 |
| Tunneling field-effect transistor: capacitance components and modeling Y Yang, X Tong, LT Yang, PF Guo, L Fan, YC Yeo IEEE Electron Device Letters 31 (7), 752-754, 2010 | 254 | 2010 |
| Multiple gate field-effect transistors having oxygen-scavenged gate stack YC Yeo, CC Yeh, CH Ko, WU Cheng-Hsien, LY Chen, XF Yu, YM Chen, ... US Patent 9,564,489, 2017 | 237 | 2017 |
| Strained-channel multiple-gate transistor YC Yeo, FL Yang, C Hu US Patent 6,855,990, 2005 | 237 | 2005 |
Ganesh SamudraAssociate Professor, National University of SingaporePotvrđena adresa e-pošte na nus.edu.sg