| Predictive hot-carrier modeling of n-channel MOSFETs M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ... IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014 | 97 | 2014 |
| Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser IEEE Electron Device Letters 37 (1), 84-87, 2015 | 85 | 2015 |
| Interface traps density-of-states as a vital component for hot-carrier degradation modeling SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ... Microelectronics Reliability 50 (9-11), 1267-1272, 2010 | 77 | 2010 |
| Determination of the hole effective mass in thin silicon dioxide film by means of an analysisof characteristics of a MOS tunnel emitter transistor MI Vexler, SE Tyaginov, AF Shulekin Journal of Physics: Condensed Matter 17 (50), 8057, 2005 | 71 | 2005 |
| Physics-based hot-carrier degradation modeling SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser ECS Transactions 35 (4), 321, 2011 | 59 | 2011 |
| Observation of normally distributed energies for interface trap recovery after hot-carrier degradation G Pobegen, S Tyaginov, M Nelhiebel, T Grasser IEEE electron device letters 34 (8), 939-941, 2013 | 58 | 2013 |
| Modeling of hot-carrier degradation: Physics and controversial issues S Tyaginov, T Grasser 2012 IEEE International Integrated Reliability Workshop Final Report, 206-215, 2012 | 56 | 2012 |
| Reliability and variability of advanced CMOS devices at cryogenic temperatures A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 48 | 2020 |
| Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser 2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014 | 46 | 2014 |
| Hot-carrier degradation caused interface state profile—Simulation versus experiment I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 46 | 2011 |
| treatment of silicon-hydrogen bond rupture at interfaces M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser Physical Review B 100 (19), 195302, 2019 | 45 | 2019 |
| Modeling of hot-carrier degradation in nLDMOS devices: different approaches to the solution of the Boltzmann transport equation P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ... IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015 | 42 | 2015 |
| Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ... 2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015 | 41 | 2015 |
| Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ... 2011 International Conference on Simulation of Semiconductor Processes and …, 2011 | 35 | 2011 |
| Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation M Bina, K Rupp, S Tyaginov, O Triebl, T Grasser 2012 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2012 | 34 | 2012 |
| Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ... 2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017 | 32 | 2017 |
| Electrical characterization and modeling of the Au/CaF2/nSi (111) structures with high-quality tunnel-thin fluoride layer MI Vexler, NS Sokolov, SM Suturin, AG Banshchikov, SE Tyaginov, ... Journal of Applied Physics 105 (8), 2009 | 30 | 2009 |
| Physical modeling of bias temperature instabilities in SiC MOSFETs C Schleich, J Berens, G Rzepa, G Pobegen, G Rescher, S Tyaginov, ... 2019 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2019 | 29 | 2019 |
| Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress I Starkov, H Enichlmair, S Tyaginov, T Grasser 2012 IEEE International Reliability Physics Symposium (IRPS), XT. 7.1-XT. 7.6, 2012 | 29 | 2012 |
| Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ... IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020 | 28 | 2020 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEPotvrđena adresa e-pošte na iue.tuwien.ac.at