| Parameterization of the optical functions of amorphous materials in the interband region GE Jellison Jr, FA Modine Applied Physics Letters 69 (3), 371-373, 1996 | 2915* | 1996 |
| A stable thin‐film lithium electrolyte: lithium phosphorus oxynitride X Yu, JB Bates, GE Jellison, FX Hart Journal of the electrochemical society 144 (2), 524, 1997 | 1104 | 1997 |
| Data analysis for spectroscopic ellipsometry GE Jellison Handbook of Ellipsometry, 237-296, 2005 | 448 | 2005 |
| Spectroscopic ellipsometry data analysis: measured versus calculated quantities GE Jellison Jr Thin solid films 313, 33-39, 1998 | 442 | 1998 |
| Dielectric and optical properties of epitaxial rare-earth scandate films and their crystallization behavior S Huang, GE Jellison Jr, HM Christen, E Cicerrella, DG Schlom, ... Applied Physics Letters 88, 2006 | 436 | 2006 |
| Optical functions of silicon determined by two-channel polarization modulation ellipsometry GE Jellison Jr Optical Materials 1 (1), 41-47, 1992 | 381 | 1992 |
| Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures GE Jellison, FA Modine Applied Physics Letters 41 (2), 180-182, 1982 | 367 | 1982 |
| Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered crystals MA McGuire, G Clark, S Kc, WM Chance, GE Jellison Jr, VR Cooper, X Xu, ... Physical Review Materials 1 (1), 014001, 2017 | 343 | 2017 |
| Spectroscopic ellipsometry of thin film and bulk anatase (TiO2) GE Jellison, LA Boatner, JD Budai, BS Jeong, DP Norton Journal of Applied Physics 93 (12), 9537-9541, 2003 | 317 | 2003 |
| Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry GE Jellison Jr, MF Chisholm, SM Gorbatkin Applied physics letters 62 (25), 3348-3350, 1993 | 314 | 1993 |
| Wide bandgap tunability in complex transition metal oxides by site-specific substitution WS Choi, MF Chisholm, DJ Singh, T Choi, GE Jellison Jr, HN Lee Nature communications 3 (1), 689, 2012 | 293 | 2012 |
| Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures GE Jellison Jr, FA Modine Physical Review B 27 (12), 7466, 1983 | 291 | 1983 |
| Optical functions of uniaxial ZnO determined by generalized ellipsometry GE Jellison, LA Boatner Physical Review B 58 (7), 3586, 1998 | 285 | 1998 |
| Determinations of structure and bonding in vitreous B2O3 by means of B10, B11, and O17 NMR GE Jellison Jr, LW Panek, PJ Bray, GB Rouse Jr The Journal of Chemical Physics 66 (2), 802-812, 1977 | 280 | 1977 |
| Two-modulator generalized ellipsometry: theory GE Jellison Jr, FA Modine Applied optics 36 (31), 8190-8198, 1997 | 255 | 1997 |
| Optical functions of silicon at elevated temperatures GE Jellison Jr, FA Modine Journal of Applied Physics 76 (6), 3758-3761, 1994 | 251 | 1994 |
| Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry GE Jellison Jr Optical Materials 1 (3), 151-160, 1992 | 240 | 1992 |
| Two-modulator generalized ellipsometry: experiment and calibration GE Jellison Jr, FA Modine Applied optics 36 (31), 8184-8189, 1997 | 237 | 1997 |
| Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry GE Jellison Jr, FA Modine Journal of Applied Physics 53 (5), 3745-3753, 1982 | 220 | 1982 |
| Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics P Doshi, GE Jellison Jr, A Rohatgi Applied optics 36 (30), 7826-7837, 1997 | 215 | 1997 |
Lynn A BoatnerDirector, ORNL Center for Radiation Detection Materials and SystemsPotvrđena adresa e-pošte na ornl.gov
