| Solution-processed metal-oxide thin-film transistors: a review of recent developments R Chen, L Lan Nanotechnology 30 (31), 312001, 2019 | 112 | 2019 |
| Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering W Zhong, G Li, L Lan, B Li, R Chen RSC Advances 8 (61), 34817-34822, 2018 | 60 | 2018 |
| Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors W Zhou, Z Meng, S Zhao, M Zhang, R Chen, M Wong, HS Kwok IEEE Electron Device Letters 33 (10), 1414-1416, 2012 | 55 | 2012 |
| Self-aligned indium–gallium–zinc oxide thin-film transistor with phosphorus-doped source/drain regions R Chen, W Zhou, M Zhang, M Wong, HS Kwok IEEE Electron Device Letters 33 (8), 1150-1152, 2012 | 54 | 2012 |
| Self-aligned indium–gallium–zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic R Chen, W Zhou, M Zhang, M Wong, HS Kwok IEEE Electron Device Letters 34 (1), 60-62, 2012 | 48 | 2012 |
| Multifunctional Optoelectronic Device Based on an Asymmetric Active Layer Structure B Ren, G Yuen, S Deng, L Jiang, D Zhou, L Gu, P Xu, M Zhang, Z Fan, ... Advanced Functional Materials 29 (17), 1807894, 2019 | 45 | 2019 |
| Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric R Chen, W Zhou, M Zhang, M Wong, HS Kwok Thin Solid Films 548, 572-575, 2013 | 43 | 2013 |
| Self-aligned top-gate InGaZnO thin film transistors using SiO 2/Al 2 O 3 stack gate dielectric R Chen, W Zhou, M Zhang, M Wong, HS Kwok Thin solid films 548, 572-575, 2013 | 43 | 2013 |
| Voltage‐Dependent Multicolor Electroluminescent Device Based on Halide Perovskite and Chalcogenide Quantum‐Dots Emitters J Zhang, B Ren, S Deng, J Huang, L Jiang, D Zhou, X Zhang, M Zhang, ... Advanced Functional Materials 30 (4), 1907074, 2020 | 40 | 2020 |
| Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017 | 40 | 2017 |
| A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function R Chen, X Zheng, W Deng, Z Wu Solid-state electronics 51 (6), 975-981, 2007 | 39 | 2007 |
| Analysis and simulation of low-frequency noise in indium-zinc-oxide thin-film transistors Y Liu, H He, R Chen, YF En, B Li, YQ Chen IEEE Journal of the Electron Devices Society 6, 271-279, 2018 | 37 | 2018 |
| Feasible route for a large area few-layer MoS2 with magnetron sputtering W Zhong, S Deng, K Wang, G Li, G Li, R Chen, HS Kwok Nanomaterials 8 (8), 590, 2018 | 36 | 2018 |
| Strong Linearly Polarized Photoluminescence and Electroluminescence from Halide Perovskite/Azobenzene Dye Composite Film for Display Applications J Zhang, C Meng, J Huang, L Jiang, D Zhou, R Chen, F Yeung, HS Kwok, ... Advanced Optical Materials 8 (7), 1901824, 2020 | 35 | 2020 |
| High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok Applied Physics Letters 109 (18), 182105, 2016 | 34 | 2016 |
| High performance self-aligned top-gate ZnO thin film transistors using sputtered Al 2 O 3 gate dielectric R Chen, W Zhou, M Zhang, HS Kwok Thin Solid Films 520 (21), 6681-6683, 2012 | 33 | 2012 |
| Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors W Zhong, R Yao, Y Liu, L Lan, R Chen IEEE Transactions on Electron Devices 67 (8), 3157-3162, 2020 | 30 | 2020 |
| Introducing Ion Migration and Light-Induced Secondary Ion Redistribution for Phase-Stable and High-Efficiency Inorganic Perovskite Solar Cells J Huang, H Yan, D Zhou, J Zhang, S Deng, P Xu, R Chen, HS Kwok, G Li ACS Applied Materials & Interfaces 12 (36), 40364-40371, 2020 | 24 | 2020 |
| InSnZnO Thin-Film Transistors With Vapor-Phase Self-Assembled Monolayer as Passivation Layer W Zhong, G Li, L Lan, B Li, R Chen IEEE Electron Device Letters 39 (11), 1680-1683, 2018 | 24 | 2018 |
| Characterization of DC-stress-induced degradation in bridged-grain polycrystalline silicon thin-film transistors M Zhang, W Zhou, R Chen, M Wong, HS Kwok IEEE Transactions on Electron Devices 61 (9), 3206-3212, 2014 | 23 | 2014 |
Sunbin DengGeorgia Institute of TechnologyPotvrđena adresa e-pošte na gatech.edu